NVMFS014P04M8LT1G

DATA SHEET www.onsemi.com MOSFET – Power, Single P-Channel V(BR)DSS RDS(on) MAX 13.8 mW @ −10 V −40 V -40 V, 13.8 mW, -52.1 A ID MAX −52.1 A 19.7 mW @ −4.5 V NVMFS014P04M8L P−Channel MOSFET Features       Small Footprint for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFWS014P04M8L − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant D (5−8) G (4) S (1,2,3) MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −40 V Gate−to−Source Voltage VGS 20 V ID −52.1 A Continuous Drain Current RqJC (Notes 1, 2, 4) TC = 25C Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 3, 4) Steady State TC = 100C TC = 25C Pulsed Drain Current PD Steady State 30 ID TA = 100C TA = 25C W 60 TC = 100C TA = 25C Power Dissipation RqJA (Notes 1, 3) −36.9 −12.5 A −8.8 PD 1.8 −268 A TJ, Tstg −55 to +175 C IS −50 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = −6.1 A) EAS 133 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Operating Junction and Storage Temperature Range Source Current (Body Diode) DFN5 (SO−8FL) CASE 488AA STYLE 1 S S S G D XXXXXX AYWZZ D D XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION IDM TA = 25C, tp = 10 ms D 1 W 3.6 TA = 100C MARKING DIAGRAM See detailed ordering, marking and shipping information on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Case − Steady State (Drain) (Notes 1, 2, 4) RqJC 2.5 C/W Junction−to−Ambient − Steady State (Note 3) RqJA 41.5 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Assumes heat−sink sufficiently large to maintain constant case temperature independent of device power. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.  Semiconductor Components Industries, LLC, 2020 August, 2023 − Rev. 2 1 Publication Order Number: NVMFS014P04M8L/D NVMFS014P04M8L ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V 21 IDSS VGS = 0 V, VDS = −40 V mV/C TJ = 25C −1.0 TJ = 125C −1000 IGSS VDS = 0 V, VGS = "20 V VGS(TH) VGS = VDS, ID = −420 mA mA "100 nA −2.4 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance −1.0 5.1 gFS mV/C VGS = −10 V, ID = −15 A 10 13.8 mW VGS = −4.5 V, ID = −7.5 A 14.6 19.7 VDS = −1.5 V, ID = −15 A 42 S 1734 pF CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP VGS = 0 V, f = 1.0 MHz, VDS = −20 V VDS = −20 V, ID = −20 A 682 32 VGS = −4.5V 12.5 VGS = −10V 26.5 nC nC 2.6 VGS = −10 V, VDS = −20 V, ID = −30 A 5.6 3.8 3.2 V td(on) 11.5 ns tr 97.4 SWITCHING CHARACTERISTICS, VGS = −4.5 V (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(off) VGS = −4.5 V, VDS = −20 V, ID = −30 A, RG = 2.5 W tf 44.5 38.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = −15 A TJ = 25C −0.86 TJ = 125C −0.74 tRR 34.9 Charge Time ta 15.8 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 100 A/ms, IS = −10 A QRR −1.25 V ns 19.1 16.3 52 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width  300 ms, Duty Cycle  2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS014P04M8L TYPICAL CHARACTERISTICS 80 VGS = 4.0 V 60 VGS = 3.6 V 40 VGS = 3.2 V 20 . 1.0 1.5 2.0 60 40 2.5 3.0 TJ = −55C TJ = 25C TJ = 125C 20 VGS = 2.8 V VGS = 2.6 V VGS = 2.4 V 3.5 4.0 4.5 5.0 0 0 1 2 3 4 5 6 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 32 TJ = 25C ID = −15 A 28 24 20 16 12 8 2 80 3 4 5 6 7 8 9 10 RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) 0.5 100 −ID, DRAIN CURRENT (A) VGS = 4.5 V 4 VDS = −3 V VGS = 4.8 V 100 0 0.0 RDS(ON), NORMALIZED DRAIN−TO−SOURCE RESISTANCE 120 VGS = 5.5 V to 10 V 40 30 20 VGS = −4.5 V 10 VGS = −10 V 0 VGS, GATE−TO−SOURCE VOLTAGE (V) 21 31 41 51 61 −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.5 2 VGS = −10 V ID = −15 A 11 71 81 TJ = 25C TJ = 85C TJ = 125C TJ = 150C TJ = 175C 1,E−05 1.5 1 0.5 0 −50 1 1,E−04 −IDSS, LEAKAGE (A) −ID, DRAIN CURRENT (A) 120 1,E−06 1,E−07 1,E−08 1,E−09 −25 0 25 50 75 100 125 150 1,E−10 0 175 TJ, JUNCTION TEMPERATURE (C) 5 10 15 20 25 30 35 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFS014P04M8L C, CAPACITANCE (pF) 1,E+04 VGS = −0 V TJ = 25C f = 1 MHz CISS 1,E+03 COSS CRSS 1,E+02 CISS COSS CRSS 1,E+01 0,1 1 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (continued) 10 9 VDS = −20 V ID = −30 A 8 T = 25C J 7 6 5 4 2 1 0 0 Figure 7. Capacitance Variation IS, SOURCE CURRENT (A) t, TIME (ns) 100 10 td(on) tr td(off) tf 1 10 RG, GATE RESISTANCE (W) 20 25 30 TJ = −55C TJ = 25C TJ = 125C 30 20 10 0 100 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage vs. Current 1000 100 VGS  10 V SINGLE PULSE TC = 25C IPEAK (A) ID, DRAIN CURRENT (A) 15 VGS = 0 V 40 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 10 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 TJ (initial) = 25C 0.5 ms 1 ms 10 ms 1 0.1 10 Figure 8. Gate−to−Source vs. Total Charge 50 VGS = −4.5 V VDS = −20 V ID = −30 A 100 5 QG, TOTAL GATE CHARGE (nC) 1000 1 QGD QGS 3 10 TJ (initial) = 100C 100 1000 1 0.0001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.001 0.01 TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVMFS014P04M8L TYPICAL CHARACTERISTICS (continued) 100 50% Duty Cycle RqJA, (C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 1 0.1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping† NVMFS014P04M8LT1G 014P04 DFN5 (Pb−Free) 1500 / Tape & Reel NVMFWS014P04M8LT1G 014P4W DFN5 (Pb−Free, Wettable Flank) 1500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 3 q E c A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K PIN 5 (EXPOSED PAD) RECOMMENDED SOLDERING FOOTPRINT* E2 L1 M 2X 0.495 4.560 2X 1.530 G D2 BOTTOM VIEW 2X XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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