NVMFS5C430NAFT1G

NVMFS5C430N MOSFET – Power, Single N-Channel 40 V, 1.7 mW, 185 A Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C430NWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 40 V 1.7 mW @ 10 V 185 A D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 185 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current Steady State W 106 ID PD W 3.8 1.9 IDM 900 A TJ, Tstg −55 to + 175 °C IS 102 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 15 A) EAS 338 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM A 35 25 TA = 100°C TA = 25°C, tp = 10 ms N−CHANNEL MOSFET 53 TA = 100°C TA = 25°C S (1,2,3) 131 PD G (4) Symbol Value Unit Junction−to−Case − Steady State RqJC 1.4 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 40 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 D S S S G D XXXXXX AYWZZ D D XXXXXX = 5C430N XXXXXX = (NVMFS5C430N) or XXXXXX = 430NWF XXXXXX = (NVMFS5C430NWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2015 July, 2019 − Rev. 1 1 Publication Order Number: NVMFS5C430N/D NVMFS5C430N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 12.8 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.5 3.5 −8.2 VGS = 10 V gFS ID = 50 A VDS =15 V, ID = 50 A 1.4 V mV/°C 1.7 130 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 3300 VGS = 0 V, f = 1 MHz, VDS = 25 V 1600 pF 45 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A Threshold Gate Charge QG(TH) 10 Gate−to−Source Charge QGS 16 Gate−to−Drain Charge QGD Plateau Voltage VGP 4.7 td(ON) 13 VGS = 10 V, VDS = 20 V; ID = 50 A 47 nC 7 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.5 W tf 48 ns 29 8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.83 TJ = 125°C 0.7 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 57 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 30 ns 27 68 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5C430N TYPICAL CHARACTERISTICS VGS = 6 V to 10 V 200 5.2 V 160 4.8 V 120 80 4.4 V 40 0.5 1.0 1.5 2.0 2.5 75 TJ = 25°C 50 3.0 TJ = 125°C 0 3 4 6 5 Figure 2. Transfer Characteristics TJ = 25°C ID = 50 A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.60 7 TJ = 25°C 1.55 1.50 1.45 VGS = 10 V 1.40 1.35 1.30 1.25 1.20 10 30 50 70 90 110 130 150 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 1.E−04 VGS = 10 V ID = 50 A TJ = 150°C IDSS, LEAKAGE (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 2 Figure 1. On−Region Characteristics 4.0 1.8 1 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) 4.5 3 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5.0 0 125 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 150 25 4.0 V 0 VDS = 10 V 175 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 200 1.6 1.4 1.2 1.0 1.E−05 TJ = 125°C 1.E−06 TJ = 85°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 1.E−07 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFS5C430N TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 1.E+04 C, CAPACITANCE (pF) CISS COSS 1.E+03 CRSS 1.E+02 1.E+01 VGS = 0 V TJ = 25°C f = 1 MHz 0 10 5 20 15 30 25 35 40 10 9 8 7 6 QGS 5 QGD 4 3 VDS = 20 V TJ = 25°C ID = 50 A 2 1 0 0 10 5 15 20 25 30 35 40 QG, GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Charge 1000 50 45 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 t, TIME (ns) 100 tr td(off) td(on) 10 VGS = 10 V VDS = 20 V ID = 50 A tf 1 IS, SOURCE CURRENT (A) VGS = 0 V 1 10 TJ = 150°C 1 100 0.3 1 0.1 0.1 0.5 0.6 TJ = 25°C TJ = −55°C 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 100 TJ = 25°C TC = 25°C VGS ≤ 10 V Single Pulse IPEAK, (A) 10 0.4 TJ = 125°C RG, GATE RESISTANCE (W) 1000 ID, DRAIN CURRENT (A) 10 500 ms TJ = 100°C 10 1 ms RDS(on) Limit Thermal Limit Package Limit 1 10 ms 10 1 100 1E−4 1E−3 10E−2 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 NVMFS5C430N TYPICAL CHARACTERISTICS 100 RqJA (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping† NVMFS5C430NT1G 5C430N DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS5C430NWFT1G 430NWF DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel NVMFS5C430NT3G 5C430N DFN5 (Pb−Free) 5000 / Tape & Reel NVMFS5C430NWFT3G 430NWF DFN5 (Pb−Free, Wettable Flanks) 5000 / Tape & Reel NVMFS5C430NAFT1G 5C430 DFN5 (Pb−Free) 1500 / Tape & Reel 430NWF DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel NVMFS5C430NWFAFT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative