DATA SHEET
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MOSFET – Power, Single
N-Channel
V(BR)DSS
ID MAX
1.2 mW @ 10 V
60 V
60 V, 1.2 mW, 287 A
RDS(ON) MAX
287 A
1.7 mW @ 4.5 V
NVMFS5C604NL
D (5,6)
Features
•
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5C604NLWF − Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAMS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
Value
Unit
VDSS
60
V
VGS
±20
V
ID
287
A
TC = 100°C
TC = 25°C
Steady
State
PD
W
200
100
ID
TA = 100°C
TA = 25°C
DFN5
CASE 506EZ
1
DFNW5
CASE 507BA
D
S
S
S
G
D
XXXXXX
AYWZZ
D
D
203
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Symbol
A
40
28
PD
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
W
3.9
1.9
ORDERING INFORMATION
IDM
900
A
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
TJ, Tstg
−55 to
+175
°C
IS
203
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 22 A)
EAS
776
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Pulsed Drain Current
TA = 100°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.75
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
August, 2022 − Rev. 5
1
Publication Order Number:
NVMFS5C604NL/D
NVMFS5C604NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
22.9
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25°C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = ±16 V
VGS(TH)
VGS = VDS, ID = 250 mA
±100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−5.9
VGS = 10 V
ID = 50 A
0.93
1.2
VGS = 4.5 V
ID = 50 A
1.25
1.7
gFS
VDS = 15 V, ID = 50 A
V
mV/°C
180
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
8900
VGS = 0 V, f = 1 MHz, VDS = 25 V
3750
pF
40
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 30 V; ID = 50 A
52
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 30 V; ID = 50 A
120
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
2.8
td(ON)
21.8
6.4
VGS = 4.5 V, VDS = 30 V; ID = 50 A
nC
21.4
12.7
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 30 V,
ID = 50 A, RG = 2.5 W
tf
79.1
ns
57.8
81.3
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.78
TJ = 125°C
0.64
tRR
ta
tb
1.2
V
98
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
45
ns
53
190
nC
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVMFS5C604NL
TYPICAL CHARACTERISTICS
200
10 V to 3.4 V
ID, DRAIN CURRENT (A)
140
3.0 V
120
100
80
2.8 V
60
40
20
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
3.2 V
160
0
0.5
1.0
1.5
2.0
TJ = 125°C
0
0.5
1.0
1.5
TJ = −55°C
2.0
2.5
3.0
3.5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 50 A
0.003
0.002
0.001
2
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.004
0
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
3
4
5
6
7
8
9
VGS, GATE VOLTAGE (V)
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
180
4.0
0.0020
TJ = 25°C
0.0015
VGS = 4.5 V
VGS = 10 V
0.0010
0.0005
10
30
50
70
90
110
130
150
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS = 10 V
ID = 40 A
1.9
TJ = 125°C
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2.1
1.7
1.5
1.3
1.1
10,000
TJ = 85°C
0.9
0.7
−50 −25
0
25
50
75
100
125
150
175
10
5
15
25
35
45
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
55
NVMFS5C604NL
10
CISS
COSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
CRSS
0
10
20
30
40
50
60
4
15
QGD
QGS
2
0
0
10
VDS = 30 V
TJ = 25°C
ID = 50 A
20
40
60
80
5
100
120
0
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
td(off)
40
IS, SOURCE CURRENT (A)
100
t, TIME (ns)
20
6
QG, TOTAL GATE CHARGE (nC)
tf
tr
td(on)
10
VGS = 4.5 V
VDD = 30 V
ID = 50 A
1
10
30
20
10
TJ = 125°C
0
100
0.3
0.4
0.5
TJ = 25°C
0.6
0.7
0.8
TJ = −55°C
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
TC = 25°C
VGS ≤ 10 V
0.01 ms
TJ(initial) = 25°C
0.1 ms
IDS (A)
100
IPEAK (A)
1000
25
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
30
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
9600
8800
8000
7200
6400
5600
4800
4000
3200
2400
1600
800
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TYPICAL CHARACTERISTICS
1 ms
dc
10 ms
10
TJ(initial) = 100°C
10
RDS(on) Limit
Thermal Limit
Package Limit
1
0.1
1
10
1
100
1E−04
1E−03
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
1E−02
NVMFS5C604NL
100
RqJA(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
NVMFS5C604NL 650 mm2, 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Case
Marking
Package
Shipping†
NVMFS5C604NLT1G
506EZ
5C604L
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5C604NLWFT1G
507BA
604LWF
DFNW5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
NVMFS5C604NLT3G
506EZ
5C604L
DFN5
(Pb−Free)
5000 / Tape & Reel
NVMFS5C604NLWFT3G
507BA
604LWF
DFNW5
(Pb−Free, Wettable Flanks)
5000 / Tape & Reel
NVMFS5C604NLAFT1G
506EZ
5C604L
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5C604NLWFAFT1G
507BA
604LWF
DFNW5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFS5C604NL
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
q
q
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE A
DATE 25 AUG 2021
1
SCALE 2:1
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24855H
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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