NVMFS5C628NLWFT3G

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel V(BR)DSS RDS(ON) MAX 2.4 mW @ 10 V 60 V 60 V, 2.4 mW, 150 A ID MAX 150 A 3.3 mW @ 4.5 V NVMFS5C628NL D (5) Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C628NLWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State Pulsed Drain Current Value Unit VDSS 60 V VGS ±20 V ID 150 A TC = 100°C TC = 25°C 110 PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1 & 2) Symbol Steady State 56 ID TA = 100°C TA = 25°C W 110 A 28 20 PD TA = 100°C W 3.7 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 D S S S G D XXXXXX AYWZZ D D XXXXXX = 5C628L XXXXXX = (NVMFS5C628NL) or XXXXXX = 628LWF XXXXXX = (NVMFS5C628NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability 1.9 IDM 900 A ORDERING INFORMATION TJ, Tstg −55 to + 175 °C See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. IS 120 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 9 A) EAS 565 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 1.3 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 40 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2016 February, 2022 − Rev. 3 1 Publication Order Number: NVMFS5C628NL/D NVMFS5C628NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 26 VGS = 0 V, VDS = 60 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 135 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −5.0 VGS = 10 V ID = 50 A 2.0 2.4 VGS = 4.5 V ID = 50 A 2.6 3.3 gFS VDS =15 V, ID = 50 A V mV/°C 110 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 3600 VGS = 0 V, f = 1 MHz, VDS = 25 V 1700 pF 28 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V; ID = 50 A 24 nC Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V; ID = 50 A 52 nC Threshold Gate Charge QG(TH) 6.0 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP 3.0 td(ON) 10 VGS = 10 V, VDS = 48 V; ID = 50 A 12 nC 4.5 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 48 V, ID = 50 A, RG = 2.5 W tf 55 ns 37 8.5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 50 A TJ = 25°C 0.8 TJ = 125°C 0.75 tRR ta tb 1.2 V 55 VGS = 0 V, dIs/dt = 100 A/ms, IS = 50 A QRR 28 ns 28 60 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5C628NL TYPICAL CHARACTERISTICS 250 225 3.6 V 225 ID, DRAIN CURRENT (A) 200 175 150 3.2 V 125 100 75 2.8 V 50 25 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 0 1.0 2.0 3.0 150 125 100 TJ = 25°C 75 50 4.0 TJ = 125°C 0 2.5 3.0 5 4 3 2 3 4 5 7 6 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.0 3.5 Figure 2. Transfer Characteristics 6 3.0 TJ = 25°C 2.8 VGS = 4.5 V 2.6 2.4 2.2 VGS = 10 V 2.0 1.8 1.6 0 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.E+06 2.0 VGS = 10 V ID = 50 A TJ = 175°C 1.E+05 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 2.0 Figure 1. On−Region Characteristics 7 1.6 1.4 1.2 1.0 1.E+04 TJ = 125°C 1.E+03 TJ = 85°C 1.E+02 0.8 0.6 −50 1.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 8 1.8 1.0 0.5 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 50 A 2 175 0 9 1 VDS = 5 V 200 25 2.4 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 250 VGS = 4.0 V to 10 V −25 0 25 50 75 100 125 150 175 1.E+01 5 15 25 35 45 55 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NVMFS5C628NL C, CAPACITANCE (pF) 10000 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS CISS COSS 1000 100 10 VGS = 0 V TJ = 25°C f = 1 MHz 1 0.1 CRSS 0 10 20 30 40 60 50 5 QGD QGS 4 3 VDS = 48 V TJ = 25°C ID = 50 A 2 1 0 0 20 10 40 30 50 Figure 8. Gate−to−Source vs. Total Charge 100 IS, SOURCE CURRENT (A) t, TIME (ns) 7 6 Figure 7. Capacitance Variation tf tr 100 td(on) 10 VGS = 10 V VDS = 48 V ID = 50 A 1 10 VGS = 0 V 10 1 TJ = 125°C 0.1 100 0.3 0.4 0.5 TJ = 25°C 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 1 ms 10 ms 100 500 ms IPEAK, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 QG, TOTAL GATE CHARGE (nC) td(off) 10 TC = 25°C VGS ≤ 10 V Single Pulse 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 QT 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 10 0.1 1 TJ (initial)= 25°C 10 TJ (initial)= 100°C 1 10 100 1.E−05 1.E−04 1.E−03 1.E−02 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVMFS5C628NL TYPICAL CHARACTERISTICS ZqJA, EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 100 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping† NVMFS5C628NLT1G 5C628L DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS5C628NLWFT1G 628LWF DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel NVMFS5C628NLT3G 5C628L DFN5 (Pb−Free) 5000 / Tape & Reel NVMFS5C628NLWFT3G 628LWF DFN5 (Pb−Free, Wettable Flanks) 5000 / Tape & Reel NVMFS5C628NLAFT1G 5C628L DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS5C628NLWFAFT1G 628LWF DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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