NVMFS6B05NLWFT1G

NVMFS6B05NL Power MOSFET 100 V, 5.6 mW, 114 A, Single N−Channel Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6B05NLWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 5.6 mW @ 10 V 114 A 100 V 8.2 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±16 V ID 114 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current 80 G (4) PD TC = 100°C TA = 25°C Steady State ID Operating Junction and Storage Temperature Source Current (Body Diode) S (1,2,3) A 17 N−CHANNEL MOSFET 12 PD TA = 100°C TA = 25°C, tp = 10 ms W 165 83 TA = 100°C TA = 25°C D (5,6) W 3.8 MARKING DIAGRAM 1.9 IDM 330 A TJ, Tstg −55 to + 175 °C IS 130 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 50 A) EAS 125 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. D 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 S S S G D XXXXXX AYWZZ D D XXXXXX = 6B05NL (NVMFS6B05NL) or XXXXXX = 6B05LW (NVMFS6B05NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 0.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2016 January, 2016 − Rev. 0 1 Publication Order Number: NVMFS6B05NL/D NVMFS6B05NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 62.9 VGS = 0 V, VDS = 80 V mV/°C TJ = 25 °C 25 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 16 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) 1.0 3.0 −5.8 VGS = 10 V VGS = 4.5 V ID = 20 A V mV/°C 4.7 5.6 6.5 8.2 mW CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 3980 VGS = 0 V, f = 1 MHz, VDS = 25 V 1370 pF 89 VGS = 4.5 V, VDD = 50 V, ID = 50 A 24.6 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 5.9 Plateau Voltage VGP 3.2 td(ON) 17.3 52.5 6.8 VGS = 10 V, VDS = 50 V; ID = 50 A nC 12 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 50 V, ID = 25 A, RG = 2.5 W tf 84 ns 28.4 83.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.84 TJ = 125°C 0.72 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 25 A 1.2 V 60.6 VGS = 0 V, dIS/dt = 100 A/ms, IS = 25 A QRR 31.4 ns 29.2 82 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS6B05NL TYPICAL CHARACTERISTICS 140 ID, DRAIN CURRENT (A) 120 3.6 V 80 3.4 V 60 3.2 V 40 3.0 V VDS = 10 V 100 80 60 40 20 20 0 0 TJ = 25°C TJ = 125°C 0.5 1.5 1.0 2.0 3.0 2.5 0 2 4 3 5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 12 ID = 50 A TJ = 25°C 10 8 6 4 2 3 1 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 3.8 V 100 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 140 4.0 V VGS = 10 V to 4.5 V 120 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) 8 VGS = 4.5 V 7 6 VGS = 10 V 5 4 3 TJ = 25°C 2 10 30 50 90 70 110 130 150 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 TJ = 150°C ID = 50 A VGS = 10 V 1.E+04 TJ = 125°C IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1.E+05 2.2 1.8 1.E+03 1.6 1.4 TJ = 85°C 1.E+02 1.2 1.0 1.E+01 0.8 0.6 −50 −25 1.E+00 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NVMFS6B05NL TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) Ciss Coss 1E+3 Crss VGS = 0 V TJ = 25°C f = 1 MHz 1E+2 1E+1 0 10 20 30 40 50 60 70 80 90 QT 9 8 7 6 5 4 Qgd Qgs 3 TJ = 25°C VDS = 50 V ID = 50 A 2 1 0 4 0 100 8 12 16 20 24 28 32 36 40 44 48 52 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Charge 100 1000 IS, SOURCE CURRENT (A) VDS = 50 V ID = 25 A VGS = 4.5 V tf tr 100 td(off) td(on) 10 10 TJ = 125°C 1 1 10 0.3 100 0.4 0.5 TJ = 25°C 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 1E+4 100 VGS ≤ 10 V Single Pulse TC = 25°C 500 ms 10 1 ms 1 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 NVMFS6B05NL TYPICAL CHARACTERISTICS 100 70 IPEAK, DRAIN CURRENT (A) GFS, SMALL−SIGNAL FORWARD TRANSFER CONDUCTANCE (S) 80 60 50 40 30 20 10 25°C 10 100°C 1 0 0 10 20 30 40 50 60 70 80 0.0001 90 100 0.001 0.01 ID, DRAIN CURRENT (A) TAV, TIME IN AVALANCHE (sec) Figure 12. GFS vs. ID Figure 13. IPEAK vs. TAV 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 NVMFS6B05NL, 650 mm2, 2 oz, Cu Single Layer Pad 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 14. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping† NVMFS6B05NLT1G 6B05NL DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS6B05NLWFT1G 605LW DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel NVMFS6B05NLT3G 6B05NL DFN5 (Pb−Free) 5000 / Tape & Reel NVMFS6B05NLWFT3G 605LW DFN5 (Pb−Free, Wettable Flanks) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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