DATA SHEET
www.onsemi.com
MOSFET - Power, Single
P-Channel
RDS(on)
V(BR)DSS
ID
2.7 mW @ −10 V
−40 V
−183 A
4.2 mW @ −4.5 V
-40 V, 2.7 mW, -183 A
S (1, 2, 3)
NVMFS3D0P04M8L
Features
•
•
•
•
•
•
G (4)
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
NVMFWS3D0P04M8L − Wettable Flanks Product
NVM Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Drain−to−Source Voltage
VDSS
−40
V
Gate−to−Source Voltage
VGS
"20
V
ID
−183
A
Continuous Drain Current RqJC (Notes 1, 2, 3)
Power Dissipation RqJC
(Notes 1, 2)
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA
(Notes 1, 2)
Pulsed Drain Current
TC = 25°C
Steady
State
TC = 100°C
TC = 25°C
−129
PD
TC = 100°C
TA = 25°C
Steady
State
86
ID
TA = 100°C
TA = 25°C
W
171
A
−28
−19
PD
TA = 100°C
W
3.9
1.9
IDM
−900
A
TJ, Tstg
−55 to
+175
°C
IS
−143
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = −30 A)
EAS
752
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
P−Channel
D (5, 6)
1
DFNW5
(FULL−CUT
SO8FL WF)
CASE 507BA
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING DIAGRAM
D
S
S
S
G
D
XXXXXX
AYWZZ
D
D
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
(Note 2)
RqJC
0.9
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
November, 2023 − Rev. 6
1
Publication Order Number:
NVMFS3D0P04M8L/D
NVMFS3D0P04M8L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
12
VGS = 0 V,
VDS = −40 V
mV/°C
TJ = 25°C
−1.0
TJ = 125°C
−100
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = −2 mA
mA
"100
nA
−2.4
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
−1.0
−4.7
mV/°C
VGS = −10 V, ID = −30 A
2.1
2.7
VGS = −4.5 V, ID = −15 A
3.1
4.2
gFS
VDS = −24 V, ID = −50 A
205
S
Input Capacitance
Ciss
5827
pF
Output Capacitance
Coss
VGS = 0 V, f = 1.0 MHz,
VDS = −20 V
Reverse Transfer Capacitance
Crss
Froward Transconductance
mW
CHARGES AND CAPACITANCES
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
3225
85.8
VDS = −20 V,
ID = −50 A
VGS = −4.5 V
VGS = −10 V
nC
58.7
124
10.9
VGS = −10 V, VDS = −20 V,
ID = −50 A
21.6
17.3
2.8
V
td(on)
15.8
ns
tr
161
SWITCHING CHARACTERISTICS (Notes 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(off)
VGS = −4.5 V, VDS = −20 V,
ID = −50 A, RG = 2.5 W
tf
349
256
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
VGS = 0 V,
IS = −15 A
TJ = 25°C
−0.75
TJ = 125°C
−0.61
tRR
113
Charge Time
ta
59.4
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, dls/dt = 100 A/ms,
Is = −50 A
QRR
−1.20
V
ns
53.1
246
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
www.onsemi.com
2
NVMFS3D0P04M8L
TYPICAL CHARACTERISTICS
4.5 V to 10 V
320
4.0 V
280
280
240
200
3.6 V
160
3.2 V
120
80
2.8 V
2.6 V
2.4 V
40
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
0
0.5
1.5
1.0
2.0
2.5
200
160
120
TJ = 25°C
80
0
3.0
TJ = 125°C
5
4
3
Figure 2. Transfer Characteristics
6
4
2
1
2
4
3
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
8
7
6
VGS = −4.5 V
5
4
3
VGS = −10 V
2
1
0
0
50
100
150
200
250
300
350
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.E−03
1.7
VGS = −10 V
ID = −30 A
TJ = 175°C
1.E−04
−IDSS, LEAKAGE (A)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
TJ = −55°C
2
Figure 1. On−Region Characteristics
8
1.5
1
0
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 30 A
0
240
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
0
VDS = 3 V
40
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
−ID, DRAIN CURRENT (A)
320
−ID, DRAIN CURRENT (A)
360
1.3
1.1
0.9
0.7
TJ = 150°C
TJ = 125°C
1.E−05
TJ = 85°C
1.E−06
1.E−07
TJ = 25°C
1.E−08
1.E−09
0.5
−50 −25
0
25
50
75
100
125
1.E−10
150 175
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
40
NVMFS3D0P04M8L
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
10K
−VGS, GATE−TO−SOURCE VOLTAGE (V)
100K
CISS
COSS
1K
100
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
CRSS
1
0.1
100
10
10
VDS = −20 V
ID = −50 A
TJ = 25°C
9
8
7
6
5
QGS
4
2
1
0
100
120
Figure 8. Gate−to−Source vs. Total Charge
VGS = 0 V
tf
tr
td(on)
10
VGS = −4.5 V
VDS = −20 V
ID = −50 A
1
10
40
30
20
100
TJ = 25°C
10
0
TJ = 125°C
0
0.2
0.4
TJ = −55°C
0.6
0.8
1.0
1.2
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1000
TJ(initial) = 25°C
100
100
0.5 ms
TC = 25°C
Single Pulse
VGS ≤ 10 V
1
IPEAK (A)
10 ms
0.1
80
50
100
10
60
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (A)
t, SWITCHING TIME (ns)
40
QG, TOTAL GATE CHARGE (nC)
td(off)
ID, DRAIN CURRENT (A)
20
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1K
1
QGD
3
1 ms
TJ(initial) = 100°C
10
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
100
1
1000
0.00001
0.0001
0.001
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
www.onsemi.com
4
NVMFS3D0P04M8L
TYPICAL CHARACTERISTICS
100
R(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
TIME (s)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NVMFS3D0P04M8LT1G
3D0P04
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFWS3D0P04M8LT1G
3D0P4W
DFNW5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVMFS3D0P04M8L
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
1
2
3
q
E
c
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
RECOMMENDED
SOLDERING FOOTPRINT*
0.10 C
SIDE VIEW
2X
DETAIL A
0.495
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.15
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
4.560
2X
0.10
8X b
C A B
0.05
c
1.530
e/2
2X
0.475
e
L
1
3.200
4
4.530
K
PIN 5
(EXPOSED PAD)
1.330
2X
E2
L1
M
0.905
1
0.965
G
D2
BOTTOM VIEW
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
6
NVMFS3D0P04M8L
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
q
q
www.onsemi.com
7
NVMFS3D0P04M8L
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
◊
www.onsemi.com
8