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NVMFWS3D0P04M8LT1G

NVMFWS3D0P04M8LT1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    PowerTDFN8_5Pin

  • 描述:

    MV8 P INITIAL PROGRAM

  • 数据手册
  • 价格&库存
NVMFWS3D0P04M8LT1G 数据手册
DATA SHEET www.onsemi.com MOSFET - Power, Single P-Channel RDS(on) V(BR)DSS ID 2.7 mW @ −10 V −40 V −183 A 4.2 mW @ −4.5 V -40 V, 2.7 mW, -183 A S (1, 2, 3) NVMFS3D0P04M8L Features • • • • • • G (4) Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified NVMFWS3D0P04M8L − Wettable Flanks Product NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit Drain−to−Source Voltage VDSS −40 V Gate−to−Source Voltage VGS "20 V ID −183 A Continuous Drain Current RqJC (Notes 1, 2, 3) Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C −129 PD TC = 100°C TA = 25°C Steady State 86 ID TA = 100°C TA = 25°C W 171 A −28 −19 PD TA = 100°C W 3.9 1.9 IDM −900 A TJ, Tstg −55 to +175 °C IS −143 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = −30 A) EAS 752 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) P−Channel D (5, 6) 1 DFNW5 (FULL−CUT SO8FL WF) CASE 507BA DFN5 (SO−8FL) CASE 488AA STYLE 1 MARKING DIAGRAM D S S S G D XXXXXX AYWZZ D D XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Drain) (Note 2) RqJC 0.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 °C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 November, 2023 − Rev. 6 1 Publication Order Number: NVMFS3D0P04M8L/D NVMFS3D0P04M8L ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 12 VGS = 0 V, VDS = −40 V mV/°C TJ = 25°C −1.0 TJ = 125°C −100 IGSS VDS = 0 V, VGS = "20 V VGS(TH) VGS = VDS, ID = −2 mA mA "100 nA −2.4 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) −1.0 −4.7 mV/°C VGS = −10 V, ID = −30 A 2.1 2.7 VGS = −4.5 V, ID = −15 A 3.1 4.2 gFS VDS = −24 V, ID = −50 A 205 S Input Capacitance Ciss 5827 pF Output Capacitance Coss VGS = 0 V, f = 1.0 MHz, VDS = −20 V Reverse Transfer Capacitance Crss Froward Transconductance mW CHARGES AND CAPACITANCES Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP 3225 85.8 VDS = −20 V, ID = −50 A VGS = −4.5 V VGS = −10 V nC 58.7 124 10.9 VGS = −10 V, VDS = −20 V, ID = −50 A 21.6 17.3 2.8 V td(on) 15.8 ns tr 161 SWITCHING CHARACTERISTICS (Notes 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(off) VGS = −4.5 V, VDS = −20 V, ID = −50 A, RG = 2.5 W tf 349 256 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = −15 A TJ = 25°C −0.75 TJ = 125°C −0.61 tRR 113 Charge Time ta 59.4 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dls/dt = 100 A/ms, Is = −50 A QRR −1.20 V ns 53.1 246 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 NVMFS3D0P04M8L TYPICAL CHARACTERISTICS 4.5 V to 10 V 320 4.0 V 280 280 240 200 3.6 V 160 3.2 V 120 80 2.8 V 2.6 V 2.4 V 40 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 0 0.5 1.5 1.0 2.0 2.5 200 160 120 TJ = 25°C 80 0 3.0 TJ = 125°C 5 4 3 Figure 2. Transfer Characteristics 6 4 2 1 2 4 3 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 8 7 6 VGS = −4.5 V 5 4 3 VGS = −10 V 2 1 0 0 50 100 150 200 250 300 350 −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.E−03 1.7 VGS = −10 V ID = −30 A TJ = 175°C 1.E−04 −IDSS, LEAKAGE (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE TJ = −55°C 2 Figure 1. On−Region Characteristics 8 1.5 1 0 −VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 30 A 0 240 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 0 VDS = 3 V 40 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) −ID, DRAIN CURRENT (A) 320 −ID, DRAIN CURRENT (A) 360 1.3 1.1 0.9 0.7 TJ = 150°C TJ = 125°C 1.E−05 TJ = 85°C 1.E−06 1.E−07 TJ = 25°C 1.E−08 1.E−09 0.5 −50 −25 0 25 50 75 100 125 1.E−10 150 175 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFS3D0P04M8L TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) 10K −VGS, GATE−TO−SOURCE VOLTAGE (V) 100K CISS COSS 1K 100 10 VGS = 0 V TJ = 25°C f = 1 MHz CRSS 1 0.1 100 10 10 VDS = −20 V ID = −50 A TJ = 25°C 9 8 7 6 5 QGS 4 2 1 0 100 120 Figure 8. Gate−to−Source vs. Total Charge VGS = 0 V tf tr td(on) 10 VGS = −4.5 V VDS = −20 V ID = −50 A 1 10 40 30 20 100 TJ = 25°C 10 0 TJ = 125°C 0 0.2 0.4 TJ = −55°C 0.6 0.8 1.0 1.2 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 TJ(initial) = 25°C 100 100 0.5 ms TC = 25°C Single Pulse VGS ≤ 10 V 1 IPEAK (A) 10 ms 0.1 80 50 100 10 60 Figure 7. Capacitance Variation IS, SOURCE CURRENT (A) t, SWITCHING TIME (ns) 40 QG, TOTAL GATE CHARGE (nC) td(off) ID, DRAIN CURRENT (A) 20 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1K 1 QGD 3 1 ms TJ(initial) = 100°C 10 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 1 1000 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVMFS3D0P04M8L TYPICAL CHARACTERISTICS 100 R(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 TIME (s) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping† NVMFS3D0P04M8LT1G 3D0P04 DFN5 (Pb−Free) 1500 / Tape & Reel NVMFWS3D0P04M8LT1G 3D0P4W DFNW5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVMFS3D0P04M8L PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 3 q E c A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A RECOMMENDED SOLDERING FOOTPRINT* 0.10 C SIDE VIEW 2X DETAIL A 0.495 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.15 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 4.560 2X 0.10 8X b C A B 0.05 c 1.530 e/2 2X 0.475 e L 1 3.200 4 4.530 K PIN 5 (EXPOSED PAD) 1.330 2X E2 L1 M 0.905 1 0.965 G D2 BOTTOM VIEW 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 NVMFS3D0P04M8L PACKAGE DIMENSIONS DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA ISSUE A q q www.onsemi.com 7 NVMFS3D0P04M8L onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com ◊ www.onsemi.com 8
NVMFWS3D0P04M8LT1G 价格&库存

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NVMFWS3D0P04M8LT1G
  •  国内价格 香港价格
  • 1+25.851311+3.20685
  • 10+17.7837910+2.20607
  • 100+12.88890100+1.59886
  • 500+10.73252500+1.33137

库存:35