PCP1103-P-TD-H

Ordering number : ENA1346A PCP1103 Bipolar Transistor –30V, –1.5A, Low VCE(sat) PNP Single PCP http://onsemi.com Applications • DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers Features • • • Adoption of MBIT process Low collector to emitter saturation voltage High allowable power dissipation • • • Large current capacity High speed switching Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Conditions Ratings VCBO VCEO Collector to Emitter Voltage Emitter to Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Unit --30 V --30 V --5 V --1.5 A --5 A Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View PCP1103-TD-H 1.6 1 2 Marking RF Packing Type: TD 4.0 1.0 2.5 1.5 LOT No. 4.5 TD 3 0.4 0.4 0.5 1.5 Electrical Connection 3.0 2 1 0.75 3 1 : Base 2 : Collector 3 : Emitter Bottom View PCP Semiconductor Components Industries, LLC, 2013 December, 2013 D1113 TKIM TC-00003073/N1208EA MSIM TC-00001718 No.A1346-1/5 PCP1103 Continued from preceding page. Parameter Symbol Base Current Conditions Ratings IB Unit --300 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg mA When mounted on ceramic substrate (450mm2×0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector to Emitter Saturation Voltage VCE= --2V, IC= --100mA Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Turn-On Time Storage Time μA μA 560 MHz 9 IC= --1mA, RBE=∞ IE= --10μA, IC=0A pF --250 --375 --0.85 --1.2 mV V --30 V --30 V --5 V See specified Test Circuit. tstg tf Fall Time --0.1 --0.1 450 IC= --0.75A, IB= --15mA IC= --10μA, IE=0A V(BR)EBO ton Unit max 200 VCB= --10V, f=1MHz IC= --0.75A, IB= --15mA V(BR)CBO V(BR)CEO Emitter to Base Breakdown Voltage typ VCE= --10V, IC= --300mA VCE(sat) VBE(sat) Base to Emitter Saturation Voltage min VCB= --30V, IE=0A VEB= --4V, IC=0A fT Cob Output Capacitance Ratings Conditions 35 ns 115 ns 30 ns Switching Time Test Circuit IB1 PW=50μs D.C.≤1% OUTPUT IB2 INPUT RB RL 50Ω + 820μF VCC= --12V IC=20IB1= --20IB2= --0.75A Ordering Information Package Shipping memo PCP 1,000pcs./reel Pb Free and Halogem Free IC -- VCE Collector Current, IC -- A --1.6 --20mA --1.4 --1.2 --8mA --10mA --6mA --4mA --0.8 --0.6 --2mA --0.4 VCE= --2V --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --25°C A --50m A --40m A --30m --1.8 --1.0 IC -- VBE --1.6 Collector Current, IC -- A --2.0 Ta=7 5°C 25°C Device PCP1103-TD-H --0.2 --0.2 IB=0mA 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Collector to Emitter Voltage, VCE -- V --0.9 --1.0 IT14106 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base to Emitter Voltage, VBE -- V --1.2 IT14107 No.A1346-2/5 PCP1103 hFE -- IC 7 Gain-Bandwidth Product, f T -- MHz DC Current Gain, hFE Ta=75°C 25°C --25°C 2 VCE= --10V 2 5 3 f T -- IC 3 VCE= --2V 100 7 1000 7 5 3 2 100 7 5 3 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 2 --0.01 3 3 5 7 --0.1 2 3 5 Collector Current, IC -- A Cob -- VCB 100 2 IT14108 VCE(sat) -- IC 5 f=1MHz IC / IB=20 7 Collector to Emitter Saturation Voltage, VCE(sat) -- V 3 Output Capacitance, Cob -- pF 5 3 2 10 7 5 3 2 --0.1 °C 25 7 5 C 75° Ta= 5°C --2 3 2 --0.01 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector to Base Voltage, VCB -- V 7 --0.01 5 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A IT01681 VCE(sat) -- IC 2 Base to Emitter Saturation Voltage, VBE(sat) -- V Collector to Emitter Saturation Voltage, VCE(sat) -- V 7 5 3 2 25° 7 C 75°C Ta= C --25° 5 3 2 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A μs 100 s 0μ 3 2 3 5 n io at er op 1m s ) °C 25 a= (T --0.1 7 5 Ta=25°C Single pulse When mounted on ceramic substrate (450mm2×0.8mm) 2 3 5 7--1.0 2 3 5 7 --10 Collector to Emitter Voltage, VCE -- V 2 3 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A Collector Dissipation, PC -- W C Collector Current, IC -- A 25°C 2 3 IT14111 PC -- Ta When mounted on ceramic substrate (450mm2×0.8mm) 1.4 50 D 3 2 5 7--0.1 75°C 5