0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
PN3643_D27Z

PN3643_D27Z

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO92-3

  • 描述:

    TRANS NPN 30V 0.5A TO-92

  • 数据手册
  • 价格&库存
PN3643_D27Z 数据手册
PN3643 PN3643 NPN General Purpose Amplifier • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 30 VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current 500 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C - Continuous Units V * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * Test Condition Min. Max. Units IC = 10mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 ICES Collector Cut-off Current VCB = 50V, IE = 0 VCB = 50V, IE = 0, TA = 65°C On Characteristics hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage Small Signal Characteristics Cob Output Capacitance VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA V 50 1.0 100 20 IC = 150mA, IB = 15mA VCB = 10V, f = 140KHz nA µA 300 0.22 V 8.0 pF η Collector Efficientcy VCE = 15V, f = 30MHz RG = 140Ω, RL = 260Ω 60 % Gpe Amplifier Power Gain VCE = 15V, f = 30MHz RG = 140Ω, RL = 260Ω 10 dB hfe Small Signal Current Gain IC = 50mA, VCE = 5.0V, f = 100MHz 2.5 * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 Symbol PD Total Device Dissipation Derate above 25°C Parameter Max. 625 5.0 Units mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN3643 Thermal Characteristics TA=25°C unless otherwise noted PN3643 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1
PN3643_D27Z 价格&库存

很抱歉,暂时无法提供与“PN3643_D27Z”相匹配的价格&库存,您可以联系我们找货

免费人工找货