PZT2907AT3

PZT2907A PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http://onsemi.com Features 4 • NPN Complement is PZT2222AT1 • The SOT-223 Package can be Soldered Using Wave or Reflow • SOT-223 Package Ensures Level Mounting, Resulting in Improved • • Thermal Conduction, and Allows Visual Inspection of Soldered Joints. The Formed Leads Absorb Thermal Stress during Soldering Eliminating the Possibility of Damage to the Die S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 1 Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −600 mAdc Collector Current − Continuous Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 BASE 3 EMITTER Total Device Dissipation (Note 1) TA = 25°C Thermal Resistance Junction−to−Ambient (Note 1) Lead Temperature for Soldering, 0.0625″ from case Time in Solder Bath Operating and Storage Temperature Range MARKING DIAGRAM AYW P2F G G 1 P2F A Y W G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic 3 COLLECTOR 2, 4 MAXIMUM RATINGS Rating 2 SOT−223 CASE 318E STYLE 1 Symbol Max Unit PD 1.5 12 W mW/°C RqJA 83.3 °C/W 260 10 °C Sec −65 to +150 °C TL TJ, Tstg ORDERING INFORMATION Package Shipping† PZT2907AT1G SOT−223 (Pb−Free) 1,000 / Tape & Reel SPZT2907AT1G SOT−223 (Pb−Free) 1,000 / Tape & Reel PZT2907AT3G SOT−223 (Pb−Free) 4,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. FR−4 with 1 oz and 713 mm2 of copper area. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 10 1 Publication Order Number: PZT2907AT1/D PZT2907A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max −60 − − −60 − − −5.0 − − − − −10 − − −50 − − −50 75 100 100 100 50 − − − − − − − − 300 − − − − − −0.4 −1.6 − − − − −1.3 −2.6 200 − − − − 8.0 − − 30 ton − − 45 td − − 10 tr − − 40 toff − − 100 ts − − 80 tf − − 30 Unit OFF CHARACTERISTICS Collector−Base Breakdown Voltage (IC = −10 mAdc, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = − 50 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = − 30 Vdc, VBE = 0.5 Vdc) ICEX Base−Emitter Cutoff Current (VCE = − 30 Vdc, VBE = − 0.5 Vdc) IBEX Vdc Vdc Vdc nAdc nAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = − 0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (IC = − 500 mAdc, VCE = −10 Vdc) hFE Collector-Emitter Saturation Voltages (IC = −150 mAdc, IB = −15 mAdc) (IC = − 500 mAdc, IB = −50 mAdc) VCE(sat) Base-Emitter Saturation Voltages (IC = −150 mAdc, IB = −15 mAdc) (IC = − 500 mAdc, IB = − 50 mAdc) VBE(sat) − Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain − Bandwidth Product (IC = − 50 mAdc, VCE = − 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cc Input Capacitance (VEB = − 2.0 Vdc, IC = 0, f = 1.0 MHz) Ce MHz pF pF SWITCHING TIMES Turn-On Time Delay Time Rise Time (VCC = − 30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) Turn-Off Time Storage Time Fall Time (VCC = − 6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc) 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 ns ns PZT2907A -30 V INPUT Zo = 50 W PRF = 150 Hz RISE TIME ≤ 2.0 ns +15 V INPUT Zo = 50 W PRF = 150 Hz RISE TIME ≤ 2.0 ns 200 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1.0 k 0 -16 V -6.0 V 37 1.0 k TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1.0 k 0 -30 V 50 50 200 ns 1N916 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit f T, CURRENT‐GAIN BANDWIDTH PRODUCT (MHz) TYPICAL ELECTRICAL CHARACTERISTICS 1000 hFE, CURRENT GAIN TJ = 125°C TJ = 25°C 100 TJ = -55°C 10 -0.1 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 1000 100 VCE = -20 V TJ = 25°C 10 -1.0 Figure 3. DC Current Gain -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 4. Current Gain Bandwidth Product -1.0 30 TJ = 25°C -0.6 20 VBE(sat) @ IC/IB = 10 Ceb CAPACITANCE (pF) VOLTAGE (VOLTS) -0.8 VBE(on) @ VCE = -10 V -0.4 -0.2 10 7.0 Ccb 5.0 3.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) 2.0 -0.1 -500 Figure 5. “ON” Voltage -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 REVERSE VOLTAGE (VOLTS) Figure 6. Capacitances http://onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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