PZTA92T1

PZTA92T1G, NSVPZTA92T1G High Voltage Transistor PNP Silicon www.onsemi.com Features • Complement to PZTA42T1G • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO −300 Vdc Collector−Base Voltage VCBO −300 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC −500 mAdc Total Power Dissipation up to @ TA = 25°C (Note 1) PD Storage Temperature Range Tstg −65 to +150 °C Junction Temperature TJ 150 °C BASE 1 EMITTER 3 4 W 1.5 1 MARKING DIAGRAM AYW P2DG G THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient (Note 2) Symbol RqJA Max Unit 1 °C/W 83.3 2. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. 3 SOT−223 CASE 318E STYLE 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. Characteristic 2 P2D A Y W G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† PZTA92T1G, SOT−223 NSVPZTA92T1G (Pb−Free) 1,000 / Tape & Reel NSVPZTA92T3G 4,000 / Tape & Reel SOT−223 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 June, 2017 − Rev. 11 1 Publication Order Number: PZTA92T1/D PZTA92T1G, NSVPZTA92T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristics Min Max −300 − −300 − −5.0 − − −0.25 − −0.1 25 40 40 − − − − − −0.5 −0.9 − 6.0 50 − Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) V(BR)CEO Collector−Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)EBO Collector-Base Cutoff Current (VCB = −200 Vdc, IE = 0) ICBO Emitter−Base Cutoff Current (VBE = −3.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −30 mAdc, VCE = −10 Vdc) hFE Saturation Voltages (IC = −20 mAdc, IB = −2.0 mAdc) (IC = −20 mAdc, IB = −2.0 mAdc) − Vdc VCE(sat) VBE(sat) DYNAMIC CHARACTERISTICS Collector−Base Capacitance @ f = 1.0 MHz (VCB = −20 Vdc, IE = 0) Ccb Current−Gain − Bandwidth Product (IC = −10 mAdc, VCE = − 20 Vdc, f = 100 MHz) pF fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test Conditions, tp = 300 ms, d 0.02. 300 250 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 200 25°C 150 -55°C 100 50 0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain www.onsemi.com 2 100 PZTA92T1G, NSVPZTA92T1G f, T CURRENT-GAIN — BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) 150 130 110 90 70 50 TJ = 25°C VCE = 20 Vdc F = 20 MHz 30 10 1000 3 1 Figure 2. Capacitance 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current−Gain − Bandwidth 1.4 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. ”ON” Voltages 1 IC, COLLECTOR CURRENT (A) V, VOLTAGE (V) 1.2 10 ms 0.1 1.0 s 0.01 0.001 1 100 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. Safe Operating Area www.onsemi.com 3 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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