RMPA2259
28dBm WCDMA PowerEdge™ Power Amplifier Module
General Description
Features
The RMPA2259 power amplifier module (PAM) is designed
for WCDMA applications. The 2 stage PAM is internally
matched to 50Ω to minimize the use of external
components and features a low power mode to reduce
standby current and DC power consumption during peak
phone usage. High power-added efficiency and excellent
linearity are achieved using our InGaP Heterojunction
Bipolar Transistor (HBT) process.
• Single positive-supply operation with low power and
shutdown modes
• 40% linear efficiency at +28dBm average output power
• Compact LCC package – 4.0 x 4.0 x 1.5mm
• Internally matched to 50Ω and DC blocked RF input/
output.
• High-Power/Low-Power operating modes for extended
battery life
Device
Module Block Diagram
VCC1, VCC2
(1, 10)
PA MODULE
COLLECTOR
BIAS
GND
(3, 6, 7, 9, 11)
INTERSTAGE
MATCH
RF IN
(2)
INPUT
MATCHING
NETWORK
INPUT
STAGE
MMIC
INPUT STAGE
BIAS
VREF
(5)
OUTPUT
STAGE
OUTPUT STAGE
BIAS
OUTPUT
MATCHING
NETWORK
RF OUT
(8)
VCC = 3.4V (nom)
VREF = 2.85V (nom)
1920–1980 MHz
50Ω I/O
BIAS
CONTROL
VMODE (4)
©2004 Fairchild Semiconductor Corporation
RMPA2259 Rev. D
RMPA2259
September 2004
Symbol
VCC1, VCC2
VREF
VMODE
PIN
TSTG
Parameter
Supply Voltage
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature Range
Ratings
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Units
V
V
V
dBm
°C
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Symbol
f
Parameter
Operating Frequency
Test Conditions
Min
1920
Typ
Max
1980
Units
MHz
WCDMA Operation
SSg
Gp
Po
PAEd
Small-Signal Gain
Power Gain
Linear Output Power
ACLR1
PAE (digital) @ +28dBM
PAE (digital) @ +16dBM
PAEd (digital) @ +16dBM
High Power Total Current
Low Power Total Current
Adjacent Channel Leakage
Ratio
±5.0MHz Offset
ACLR2
±10.0MHz Offset
Itot
Po = 0dBm
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode ≥ 2.0V, Vcc = 1.4V
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode = 2.0V
3GPP 3.2 03-00 DPCCH + 1 DPDCH
24
26.5
24
40
9
20
450
130
dB
dB
dB
dBm
dBm
%
%
%
mA
mA
-40
-43
-53
-66
dBc
dBc
dBc
dBc
28
16
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode ≥ 2.0V
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode ≥ 2.0V
General Characteristics
VSWR
NF
Rx No
2fo-5fo
S
Tc
Input Impedance
Noise Figure
Receive Band Noise Power
Harmonic Suppression
Spurious Outputs2, 3
Ruggedness with Load
Mismatch3
2.0:1
3
-139
Po ≤ +28dBm, 1920 to 1980 MHz
Po ≤ +28dBm
Load VSWR ≤ 5.0:1
-30
-60
No permanent damage
Case Operating Temperature
dB
dBm/Hz
dBc
dBc
10:1
-30
85
°C
8
5
mA
mA
µA
DC Characteristics
Iccq
Iref
Icc(off)
Quiescent Current
Reference Current
Shutdown Leakage Current
Vmode ≥ 2.0V
Po ≤ +28dBm
No applied RF signal
50
5
1
Notes:
1: All parameters met at TC = +25°C, VCC = +3.4V, f = 1950MHz and load VSWR ≤ 1.2:1.
2: All phase angles
3: Guaranteed by design
©2004 Fairchild Semiconductor Corporation
RMPA2259 Rev. D
RMPA2259
Absolute Ratings 1
Symbol
f
VCC1, VCC2
VREF
VMODE
POUT
TC
Parameter
Operating Frequency
Supply Voltage
Reference Voltage
Operating
Shutdown
Bias Control Voltage
Low-Power
High-Power
Linear Output Power
High-Power
Low-Power
Case Operating Temperature
Min
1920
3.0
Typ
2.7
0
1.8
0
-30
Max
1980
4.2
Units
MHz
V
2.85
3.1
0.5
V
V
2.0
3.0
0.5
V
V
+28
+16
+85
dBm
dBm
°C
3.4
Note:
1: RF input power for WCDMA POUT = +28dBm.
©2004 Fairchild Semiconductor Corporation
RMPA2259 Rev. D
RMPA2259
Recommended Operating Conditions
RMPA2259
Typical Characteristics
High-Power Mode (Vmode = 0V)
RMPA2259 W-CDMA 4x4mm2 PAM
Vcc = 3.4V, Vref = 2.85V, Pout = 28dBm
33
45
32
44
31
43
30
42
29
41
PAE (%)
GAIN (dB)
RMPA2259 W-CDMA 4x4mm2 PAM
Vcc = 3.4V, Vref = 2.85V, Pout = 28dBm
28
27
40
39
26
38
25
37
24
36
23
1900
1920
1940
1960
1980
35
1900
2000
Figure 2.
-40
-32
-42
-34
-44
-36
-46
-38
-40
-42
-50
-52
-54
-46
-56
-48
-58
1960
1980
2000
-60
1900
1920
1940
1960
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 3.
Figure 4.
©2004 Fairchild Semiconductor Corporation
2000
-48
-44
1940
1980
RMPA2259 W-CDMA 4x4mm2 PAM
Vcc = 3.4V, Vref = 2.85V, Pout = 28dBm
ACLR2 (dBc)
ACLR1 (dBc)
1960
Figure 1.
-30
1920
1940
FREQUENCY (MHz)
RMPA2259 W-CDMA 4x4mm2 PAM
Vcc = 3.4V, Vref = 2.85V, Pout = 28dBm
-50
1900
1920
FREQUENCY (MHz)
1980
2000
RMPA2259 Rev. D
In addition to high-power/low-power bias modes, the
efficiency of the PA module can be significantly increased
at backed-off RF power levels by dynamically varying the
supply voltage (Vcc) applied to the amplifier. Since mobile
handsets and power amplifiers frequently operate at 10–
20dB back-off, or more, from maximum rated linear power,
battery life is highly dependent on the DC power consumed
at antenna power levels in the range of 0 to +16dBm. The
reduced demand on transmitted RF power allows the PA
supply voltage to be reduced for improved efficiency, while
still meeting linearity requirements for CDMA modulation
with excellent margin. High-efficiency DC-DC converters
are now available to implement switched-voltage operation.
The following charts show measured performance of the
PA module in low-power mode (Vmode = +2.0V) at
+16dBm output power and over a range of supply voltages
from 3.4V nominal to 1.2V. Power-added efficiency is more
than doubled from 9.5 percent to nearly 25 percent (Vcc =
1.2V) while maintaining a typical ACLR1 of -46dBc and
ACLR2 of approximately -60dBc.
Operation at even lower levels of Vcc supply voltage are
possible with a further restriction on the maximum RF
output power. As shown below, the PA module can be
biased at a supply voltage of as low as 0.7V with an
efficiency as high as 10–12 percent at +8dBm output
power. Excellent signal linearity is still maintained even
under this low supply voltage condition.
Typical Characteristics (continued)
Low-Power Mode (Po = +16dBm)
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 16dBm
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 16dBm
30
30
29
25
28
26
25
VCC = 1.2V
VCC = 3.4V
VCC = 3.0V
20
PAE (%)
GAIN (dB)
27
VCC = 2.0V
VCC = 1.5V
26
15
VCC = 1.5V
VCC = 2.0V
VCC = 1.2V
23
10
22
VCC = 3.0V
VCC = 3.4V
21
20
1900
1920
1940
1960
5
1900
2000
1960
Figure 5.
Figure 6.
1980
2000
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 16dBm
-50
-52
-39
-54
-41
-56
VCC = 3.0V
ACLR2 (dBc)
VCC = 3.4V
VCC = 2.0V
VCC = 1.5V
-45
-47
1940
FREQUENCY (MHz)
-37
-43
1920
FREQUENCY (MHz)
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 16dBm
-35
ACLR1 (dBc)
1980
VCC = 1.2V
-58
VCC = 1.2V
-60
-62
-49
-64
-51
-66
-53
-68
-55
1900
1920
1940
1960
1980
2000
VCC = 1.5V
VCC = 2.0V
VCC = 3.0V
-70
1900
VCC = 3.4V
1920
1940
1960
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 7.
Figure 8.
©2004 Fairchild Semiconductor Corporation
1980
2000
RMPA2259 Rev. D
RMPA2259
Efficiency Improvement Application
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 16dBm, Freq = 1.95GHz
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 16dBm, Freq = 1.95GHz
30
32
28
28
26
PAE (%)
Gain (dB)
24
24
22
20
16
20
12
18
16
0.5
1
1.5
2
2.5
3
3.5
8
0.5
4
1
1.5
2
2.5
VCC (V)
VCC (V)
Figure 9.
Figure 10.
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 16dBm, Freq = 1.95GHz
3
3.5
4
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 16dBm, Freq = 1.95GHz
-26
-48
-28
-50
-30
-52
-32
-54
ACLR2 (dBc)
ACLR1 (dBc)
-34
-36
-38
-40
-42
-58
-60
-62
-44
-64
-46
-66
-48
-50
0.5
-56
1
1.5
2
2.5
VCC (V)
Figure 11.
©2004 Fairchild Semiconductor Corporation
3
3.5
4
-68
0.5
1
1.5
2
2.5
3
3.5
4
VCC (V)
Figure 12.
RMPA2259 Rev. D
RMPA2259
Typical Characteristics (continued)
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 12dBm, Freq = 1.95GHz
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 12dBm, Freq = 1.95GHz
30
24
28
20
24
PAE (%)
GAIN (dB)
26
22
16
12
20
8
18
16
0.5
1
1.5
2
2.5
3
3.5
4
0.5
4
1
1.5
2
2.5
VCC (V)
VCC (V)
Figure 13.
Figure 14.
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 12dBm, Freq = 1.95GHz
3
3.5
4
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 12dBm, Freq = 1.95GHz
-26
-48
-28
-50
-30
-52
-32
-54
ACLR2 (dBc)
ACLR1 (dBc)
-34
-36
-38
-40
-42
-58
-60
-62
-44
-64
-46
-66
-48
-50
0.5
-56
1
1.5
2
2.5
VCC (V)
Figure 15.
©2004 Fairchild Semiconductor Corporation
3
3.5
4
-68
0.5
1
1.5
2
2.5
3
3.5
4
VCC (V)
Figure 16.
RMPA2259 Rev. D
RMPA2259
Typical Characteristics (continued)
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 8dBm, Freq = 1.95GHz
30
14
28
12
26
10
24
8
PAE (%)
GAIN (dB)
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 8dBm, Freq = 1.95GHz
22
20
4
18
2
16
0.5
1
1.5
2
2.5
3
3.5
0
0.5
4
-54
-41
-56
ACLR2 (dBc)
-52
-43
-45
-47
-62
-51
-66
-53
-68
VCC (V)
Figure 19.
3
3.5
4
4
-60
-64
2.5
3.5
-58
-49
2
3
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 8dBm, Freq = 1.95GHz
-39
©2004 Fairchild Semiconductor Corporation
2.5
Figure 18.
-37
1.5
2
Figure 17.
-50
1
1.5
VCC (V)
-35
-55
0.5
1
VCC (V)
RMPA2259 W-CDMA 4x4mm2 PAM
Vref = 2.85V, Pout = 8dBm, Freq = 1.95GHz
ACLR1 (dBc)
6
-70
0.5
1
1.5
2
2.5
3
3.5
4
VCC (V)
Figure 20.
RMPA2259 Rev. D
RMPA2259
Typical Characteristics (continued)
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Precautions to Avoid Permanent Device Damage:
• Cleanliness: Observe proper handling procedures to
ensure clean devices and PCBs. Devices should remain
in their original packaging until component placement to
ensure no contamination or damage to RF, DC and
ground contact areas.
• Device Cleaning: Standard board cleaning techniques
should not present device problems provided that the
boards are properly dried to remove solvents or water
residues.
• Static Sensitivity: Follow ESD precautions to protect
against ESD damage:
– A properly grounded static-dissipative surface on
which to place devices.
– Static-dissipative floor or mat.
– A properly grounded conductive wrist strap for each
person to wear while handling devices.
• General Handling: Handle the package on the top with a
vacuum collet or along the edges with a sharp pair of
bent tweezers. Avoiding damaging the RF, DC, and
ground contacts on the package bottom. Do not apply
excessive pressure to the top of the lid.
• Device Storage: Devices are supplied in heat-sealed,
moisture-barrier bags. In this condition, devices are
protected and require no special storage conditions.
Once the sealed bag has been opened, devices should
be stored in a dry nitrogen environment.
Device Usage:
Fairchild recommends the following procedures prior to
assembly.
• Dry-bake devices at 125°C for 24 hours minimum. Note:
The shipping trays cannot withstand 125°C baking
temperature.
• Assemble the dry-baked devices within 7 days of
removal from the oven.
• During the 7-day period, the devices must be stored in an
environment of less than 60% relative humidity and a
maximum temperature of 30°C
Solder Materials & Temperature Profile:
Reflow soldering is the preferred method of SMT
attachment. Hand soldering is not recommended.
Reflow Profile
• Ramp-up: During this stage the solvents are evaporated
from the solder paste. Care should be taken to prevent
rapid oxidation (or paste slump) and solder bursts
caused by violent solvent out-gassing. A typical heating
rate is 1- 2°C/sec.
• Pre-heat/soak: The soak temperature stage serves two
purposes; the flux is activated and the board and devices
achieve a uniform temperature. The recommended soak
condition is: 120–150 seconds at 150°C.
• Reflow Zone: If the temperature is too high, then devices
may be damaged by mechanical stress due to thermal
mismatch or there may be problems due to excessive
solder oxidation. Excessive time at temperature can
enhance the formation of inter-metallic compounds at
the lead/board interface and may lead to early
mechanical failure of the joint. Reflow must occur prior to
the flux being completely driven off. The duration of peak
reflow temperature should not exceed 10 seconds.
Maximum soldering temperatures should be in the range
215–220°C, with a maximum limit of 225°C.
• Cooling Zone: Steep thermal gradients may give rise to
excessive thermal shock. However, rapid cooling
promotes a finer grain structure and a more crackresistant solder joint. The illustration below indicates the
recommended soldering profile.
Solder Joint Characteristics:
Proper operation of this device depends on a reliable voidfree attachment of the heat sink to the PWB. The solder
joint should be 95% void-free and be a consistent
thickness.
Rework Considerations:
Rework of a device attached to a board is limited to reflow
of the solder with a heat gun. The device should not be
subjected to more than 225°C and reflow solder in the
molten state for more than 5 seconds. No more than 2
rework operations should be performed.
• If the 7-day period or the environmental conditions have
been exceeded, then the dry-bake procedure must be
repeated.
©2004 Fairchild Semiconductor Corporation
RMPA2259 Rev. D
RMPA2259
Applications Information
RMPA2259
Recommended Solder Reflow Profile
240
10 SEC
220
200
183°C
180
160
140
DEG (°C)
120
100
1°C/SEC
SOAK AT 150°C
FOR 60 SEC
80
45 SEC (MAX)
ABOVE 183°C
1°C/SEC
60
40
20
0
0
60
120
180
240
300
TIME (SEC)
Evaluation Board Schematic
3.3 µF
SMA1
RF IN
1000 pF
1
Vcc1
8
50 ohm TRL
4
Vmode
Vref
5
Vcc2
10
2
RMPA2259
PYYWW
U31XX
50 ohm TRL
SMA2
RF OUT
3,6,7,9
11
1000 pF
0.1 µF
©2004 Fairchild Semiconductor Corporation
3.3 µF
1000 pF
(PACKAGE BASE)
RMPA2259 Rev. D
RMPA2259
Evaluation Board Layout
1
5
3
6
6
5
2
4
7
5
Materials List
Qty
1
2
3
Ref
3
3
2
1
1
A/R
A/R
Item No.
1
2
3
4
5
5 (Alt)
6
7
7 (Alt)
8
9
Part Number
G657553-1 V2
#142-0701-841
#2340-5211TN
G65758 4GRM39XR102KS0V
ECJ-1V81H102K
C3216X5R1A335M
GRM39YSV104Z16V
ECJ-1VB1CID4K
SN63
SN96
Description
PC Board
SMA Connector
Terminals
Assembly, RMPA1959
1000pF Capacitor (0603)
1000pF Capacitor (0603)
3.3µF Capacitor (1206)
0.1µF Capacitor (0603)
0.1µF Capacitor (0603)
Solder Paste
Solder Paste
Vendor
Fairchild
Johnson
3M
Fairchild
Murata
Panasonic
TDK
Murate
Panasonic
Indium Corp.
Indium Corp
DC Turn On Sequence:
1. Vcc1 = Vcc2 = 3.4V (typical)
2. Vref = 2.85V (typical)
3. Vmode = 2.0V (Pout < 16dBm), 0V (Pout > 16dBm)
©2004 Fairchild Semiconductor Corporation
RMPA2259 Rev. D
RMPA2259
Package Outline
0.0098 (0.25)
Typ.
0.0118 (0.30)
Typ.
0.1378 (3.50)
Typ.
0.0335 (0.85)
Typ.
0.1436
(3.65)
0.0425 (1.08)
0.0069 (0.18)
0.0724 (1.84)
Bottom View
Pin 1 Indicator
0.1575 +.004
– 0.02
2x
+.100
(4.00 –0.00 )
1
10
2
9
4
0.0830 (1.60)
8
3
5
PA2259
PYYWW
U31XX
7
6
Top View
Front View
Dimensions are in inches (mm)
Package Pinout
Pin #
1
2
3
4
5
6
7
8
9
10
11
©2004 Fairchild Semiconductor Corporation
Signal Name
Vcc1
RF In
GND
Vmode
Vref
GND
GND
RF Out
GND
Vcc2
GND
Description
Supply Voltage to Input Stage
RF Input Signal
Ground
High-Power/Low-Power Mode Control
Reference Voltage
Ground
Ground
RF Output Signal
Ground
Supply Voltage to Output Stage
Paddle Ground
RMPA2259 Rev. D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
ActiveArray™
FASTr™
Bottomless™ FPS™
CoolFET™
FRFET™
CROSSVOLT™ GlobalOptoisolator™
DOME™
GTO™
EcoSPARK™ HiSeC™
E2CMOS™
I2C™
EnSigna™
i-Lo™
FACT™
ImpliedDisconnect™
FACT Quiet Series™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
Across the board. Around the world.™ OPTOPLANAR™
PACMAN™
The Power Franchise
POP™
Programmable Active Droop™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13
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