RMPA2453
2.4–2.5 GHz InGaP HBT Linear Power Amplifier
General Description
Features
The RMPA2453 power amplifier is designed for high
performance WLAN applications in the 2.4–2.5 GHz
frequency band. The low profile 16 pin 3 x 3 x 0.9 mm
package with internal matching on both input and output to
50Ω minimizes next level PCB space and allows for
simplified integration. The on-chip detector provides power
sensing capability while the logic control provides power
saving shutdown options. The PA’s low power consumption
and excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) technology.
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26dB small signal gain
26.5dBm output power @ 1dB compression
2.5% EVM at 18dBm modulated output power
3.5% EVM at 19dBm modulated output power
3.3V single positive supply operation
Two power saving shutdown options (bias and logic
control)
Integrated power detector with 20dB dynamic range
Low profile 16 pin 3 x 3 x 0.9 mm leadless package
Internally matched to 50Ω and DC blocked RF input/
output
Optimized for use in 802.11b/g applications
Device
VL
VM12
VDET REF
VDET
VC2
Functional Block Diagram
16
15
14
13
VOLTAGE
DETECTOR
1
12
N/C
11
RF OUT
BIAS
RF IN
2
INPUT
MATCH
INT STG
MATCH
OUTPUT
MATCH
N/C
4
9
N/C
©2004 Fairchild Semiconductor Corporation
5
6
7
8
N/C
RF OUT
N/C
10
N/C
3
VC1
RF IN
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Description
VL (logic)
RF IN
RF IN
N/C
VC1
N/C
N/C
N/C
N/C
RF OUT
RF OUT
N/C
VC2
VDET
VDET REF
VM12
Backside Ground
RMPA2453 Rev. D
RMPA2453
July 2004
Symbol
VC1, VC2
IC1, IC2
VM12
VL
PIN
TCASE
TSTG
Parameter
Positive Supply Voltage
Supply Current
IC1
IC2
Positive Bias Voltage
Logic Voltage
RF Input Power
Case Operating Temperature
Storage Temperature
Ratings
5
Units
V
120
700
4.0
5
10
-40 to +85
-55 to +150
mA
mA
V
V
dBm
°C
°C
Notes:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values
Electrical Characteristics1, 3 802.11g OFDM Modulation (RF framed with 176ms burst time 100ms
idle time) 54Mbps Data Rate 16.7MHz Bandwidth
Parameter
Frequency
Supply Voltage
Gain
Total Current @ 18dBm POUT
Total Current @ 19dBm POUT
EVM @ 18dBm POUT2
EVM @ 19dBm POUT2
Detector Output @ 19dBm POUT
Detector Threshold4
POUT Spectral Mask Compliance5
Min
2.4
3.0
24.5
Typ
3.3
26
133
145
2.5
3.5
515
5.0
21.0
Max
2.5
3.6
29
160
165
3.53
4.53
600
7.0
Units
GHz
V
dB
mA
mA
%
%
mV
dBm
dBm
Electrical Characteristics3, 6 802.11b CCK Modulation (RF not framed) 11Mbps Data Rate
22.0MHz Bandwidth
Parameter
Frequency
Supply Voltage
Gain
Total Current
First Sidelobe Power
Second Sidelobe Power
Max POUT Spectral Mask Compliance7
Min
2.4
3.0
24.5
Typ
3.3
26
250
-35
-55
24.0
Max
2.5
3.6
29
Units
GHz
V
dB
mA
dBc
dBc
dBm
Notes:
1: VC1,VC2, VM12 = 3.3V, TC = 25°C, PA is constantly biased, 50Ω system.
2: Percentage includes system noise floor of EVM = 0.8%.
3: EVM not measured 100% in production.
4: POUT measured at PIN corresponding to power detection threshold.
5: Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6: VC1,VC2, VM12 = 3.3V, TC = 25°C, POUT = +23dBm, 50Ω system. Satisfies spectral mask.
7: PIN is adjusted to point where spectral performance reaches maximum limit.
©2004 Fairchild Semiconductor Corporation
RMPA2453 Rev. D
RMPA2453
Absolute Ratings1
Parameter
Frequency
Supply Voltage
Gain
Total Quiescent Current
Bias Current at pin VM122
P1dB Compression
Standby Current3
Shutdown Current (VM12 = 0V)
Input Return Loss
Output Return Loss
Detector Output at P1dB Comp
Detector POUT Threshold
2nd Harmonic Output at P1dB
3rd Harmonic Output at P1dB
Logic
Shutdown Control (VL):
Device Off, Logic High Input
Device On, Logic Low Input
Logic Current
Turn-on Time4
Turn-off Time
Spurious (Stability)5
Min
2.4
3.0
24.5
10.0
25
2.0
Typ
3.3
26
105
12.5
26.5
0.7
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