RMPA2550
2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier
General Description
• 27 dB modulated gain 5.15 to 5.85 GHz band
• 26 dBm output power @ 1 dB compression both
frequency bands
• 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz
• 2.3% EVM at 18 dBm modulated Pout, 5.45 GHz
• 3.3 V single positive supply operation
• Adjustable bias current operation
• Two power saving shutdown options (bias and logic
control)
• Separate integrated power detectors with 20 dB dynamic
range
• Low profile 20 pin, 3 x 4 x 0.9 mm standard
Device
QFN leadless package
• Internally matched to 50 ohms
• Optimized for use in 802.11a/b/g
applications
The RMPA2550 is a dual frequency band power amplifier
designed for high performance WLAN applications in the
2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The
single low profile 20 pin 3 x 4 x 0.9 mm package with
internal matching on both input and output to 50 Ω
minimizes next level PCB space and allows for simplified
integration. The two on-chip detectors provide power
sensing capability while the logic control provides power
saving shutdown options. The PA’s low power consumption
and excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) technology.
Features
• Dual band operation in a single package design
• 26 dB modulated gain 2.4 to 2.5 GHz band
Electrical Characteristics1,3 802.11g/a OFDM
Modulation (with 176 µs burst time, 100µs idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Supply Voltage
Gain
Total Current @ 18dBm POUT
Total Current @ 19dBm POUT
EVM @ 18dBm POUT2
EVM @ 19dBm POUT2
Detector Output @ 19dBm POUT
Detector Threshold4
POUT Spectral Mask Compliance5,7
Minimum
2.4
3.0
24.5
Typical
Maximum
2.5
3.6
28
182
189
2.5
3.5
600
7.0
3.3
26
150
157
2.0
3.0
508
5.0
21.0
Minimum
5.15
3.0
25.5
Typical
3.3
27
228
235
2.5
3.5
780
5.0
21.0
Maximum
5.85
3.6
29
260
267
3.5
4.5
865
7.0
Unit
GHz
V
dB
mA
mA
%
%
mV
dBm
dBm
Electrical Characteristics3,6 802.11b CCK
Modulation (RF not framed) 11Mbps Data Rate, 22.0 MHz Bandwidth
Parameter
Frequency
Supply Voltage
Gain
Total Current
First Sidelobe Power
Second Sidelobe Power
Max POUT Spectral Mask Compliance7
Minimum
2.4
3.0
24.5
Typical
3.3
26
250
Maximum
2.5
3.6
28
-40
-55
24.0
Unit
GHz
V
dB
mA
dBc
dBc
dBm
Notes:
1: VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25°C, PA is constantly biased, 50Ω system. VL adjusted for either 2.4
or 5 GHz operation.
2: Percentage includes system noise floor of EVM=0.8%.
3: Not measured 100% in production.
4: POUT measured at PIN corresponding to power detection threshold.
5: Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6: VC1 2.4, VC2 2.4, VM 2.4 = 3.3 Volts, T=25°C, POUT =+23 dBm, 50Ω system. Satisfies spectral mask.
7: PIN is adjusted to point where performance approaches spectral mask requirements.
©2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
RMPA2550
August 2004
Parameter
Frequency
Supply Voltage
Gain2
Total Quiescent Current2
Bias Current at pin VM3
P1dB Compression2
Current @ P1dB Comp2
Standby Current4
Shutdown Current (VM=0V)
Input Return Loss
Output Return Loss
Detector Output at P1dB Comp
Detector POUT Threshold9
2nd Harmonic Output at P1dB
3rd Harmonic Output at P1dB
Logic
Shutdown Control Pin:
Device Off
Device On
Logic Current
Turn-on Time5
Turn-off Time
Spurious (Stability)6
Minimum
2.4
3.0
24
70
25
2.0
Typical
3.3
26
120
13.5
26
350
0.5
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