RURD660S9A-F085

Ultrafast Power Rectifier 6 A, 600 V RURD660S9A-F085 The RURD660S9A−F085 is an ultrafast diode with soft recovery characteristics (trr < 83 ns). It has a low forward voltage drop and is of silicon nitride passivated ion−implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing powerloss in the switching transistors. www.onsemi.com 1, 2, 4. Cathode 3. Anode Features • • • • • High Speed Switching (trr = 63 ns (Typ.) @ IF = 6 A) Low Forward Voltage (VF = 1.26 V (Typ.) @ IF = 6 A) Avalanche Energy Rated AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device 4 1 3 DPAK3 (TO−252 3 LD) CASE 369AS Applications • General Purpose • Switching Mode Power Supply • Power Switching Circuits MARKING DIAGRAM $Y&Z&3&K RUR660 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V 6 A VR IF(AV) Average Rectified Forward Current @ TC = 25°C IFSM Non−repetitive Peak Surge Current TJ, TSTG Operating Junction and Storage Temperature 2 60 A − 55 to +175 °C RUR660 $Y &Z &3 &K = Specific Device Code = ON Semiconductor Logo = Assembly Plant Code = 3−Digit Date Code = 2−Digits Lot Run Traceability Code ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Max Unit RqJC Maximum Thermal Resistance, Junction to Case 3 °C/W RqJA (Note 1) Maximum Thermal Resistance, Junction to Ambient 140 °C/W RqJA (Note 2) Maximum Thermal Resistance, Junction to Ambient 50 °C/W 1. Mounted on a minimum pad follow by JEDEC standard. 2. Mounted on a 1 in2 pad of 2 oz copper follow by JEDEC standard. © Semiconductor Components Industries, LLC, 2013 July, 2020 − Rev. 4 1 Publication Order Number: RURD660S9A−F085/D RURD660S9A−F085 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol IR Parameter Condition Instantaneous Reverse Current VR = 600 V Min Typ Max Unit TC = 25°C − − 100 mA TC = 175° − − 500 mA VFM Instantaneous Forward (Note 3) Voltage IF = 6 A TC = 25°C TC = 175° − − 1.26 1.04 1.5 − V V trr Reverse Recovery Time (Note 4) IF = 1 A, di/dt = 200 A/ms, VCC = 390 V TC = 25°C − 25 33 ns IF = 6 A, di/dt = 200 A/ms, VCC = 390 V TC = 25°C TC = 175° − − 63 119 83 − ns ns IF = 6 A, di/dt = 200 A/ms, VCC = 390 V TC = 25°C − − − 23 40 151 − − − ns ns nC 10 − − mJ ta tb Qrr Reverse Recovery Time Reverse Recovery Charge WAVL Avalanche Energy (L = 20 mH) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2% 4. Guaranteed by design TEST CIRCUIT AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG VGE dI F t rr dt ta 0 VDD − IGBT t1 IF + tb 0.25 IRM t2 IRM Figure 1. trr Test Circuit I=1A L = 20 Mh R < 0.1 W EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) Figure 2. trr Waveforms and Definitions VAVL L R CURRENT SENSE + VDD IL IL I V Q1 VDD DUT − t0 Figure 3. Avalanche Energy Test Circuit t1 t2 t Figure 4. Avalanche Current and Voltage Waveforms www.onsemi.com 2 RURD660S9A−F085 TYPICAL PERFORMANCE CHARACTERISTICS 100 100 IR, Forward Current (mA) IF, Forward Current (A) TC = 175°C 10 TC = 175°C TC = 125°C 1 TC = 25°C 0.1 0.1 0.5 1.0 1.5 2.0 10 TC = 125°C 1 0.1 TC = 25°C 0.01 2.5 100 200 VF, Forward Voltage (V) trr, Reverse Recovery Time (ns) Cj, Capacitance (pF) 180 60 40 20 10 0.1 1 10 150 TC = 175°C 120 90 TC = 125°C 60 TC = 25°C 30 100 100 200 300 400 500 di/dt (A/ms) Figure 5. Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time vs. di/dt 15 35 IF(AV), Average Forward Current (A) trr, Reverse Recovery Current (A) 600 IF = 6 A VR, Reverse Voltage (V) TC = 175°C 10 TC = 125°C 5 0 100 500 Figure 10. Typical Reverse Current vs. Reverse Voltage Typical Capacitance at 10 V = 24 pF 80 400 VR, Reverse Voltage (V) Figure 9. Typical Forward Voltage Drop vs. Forward Current 90 300 TC = 25°C IF = 6 A 200 300 400 30 20 10 0 500 25 50 75 100 125 150 TC, Case Temperature (°C) di/dt (A/ms) Figure 7. Typical Reverse Recovery Current vs. di/dt Figure 8. Forward Current Derating Curve www.onsemi.com 3 175 RURD660S9A−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Qrr, Reverse Recovery Charge (nC) 800 IF = 6 A TC = 175°C 600 TC = 125°C 400 TC = 25°C 200 0 100 200 300 400 500 di/dt [A/ms] Figure 12. Reverse Recovery Charge ZthJC, Thermal Response (t) 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.1 single pulse 0.01 10−5 10−4 *NOTES: 1. RthJC = 1.7°C/W Typ. 2. Duty Factor, D = t1 / t2 3. TJM − TC = PDM x ZthJC (t) 10−3 10−2 10−1 100 101 102 t1, Square Wave Pulse Duration (sec) Figure 11. Transient Thermal Response Curve ORDERING INFORMATION Device Device Marking Package Shipping† RURD660S9A−F085 RUR660 TO−252 3 LD (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13810G DPAK3 (TO−252 3 LD) DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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