S3DB

DATA SHEET www.onsemi.com Rectifiers, Surface Mount, 3A, 50 V-1000 V 1 Cathode 2 Anode MARKING DIAGRAM S3AB-S3MB Features • • • • • • • • SMC CASE 403AF Glass Passivated Chip Junction High Surge Current Capacity Low Forward Voltage: 1.15 V Maximum UL Flammability 94V−0 Classification MSL 1 per J−STD−020 RoHS Compliant / Green Molding Compound NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide Free Devices ZYWW S3xB Polarity Mark Z Y WW S3xB = Assembly Plant Code = Year = Work Week = Specific Device Code x = A, B, D, G, J, K, M ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted. Value S3AB S3BB S3DB S3GB S3JB S3KB S3MB Unit VRRM Repetitive Peak Reverse Voltage 50 100 200 400 600 800 1000 V VRMS RMS Reverse Voltage 35 70 140 280 420 560 700 V DC Blocking Voltage 50 100 200 400 600 800 1000 A Parameter Symbol VR IF(AV) Average Forward Rectified Current 3 A IFSM Peak Forward Surge Current: 8.3 ms Single Half Sine−Wave Superimposed on Rated Load 80 A Operating Junction Temperature Range −55 to 150 °C Storage Temperature Range −55 to 150 °C TJ TSTG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. (Note 1) Symbol Value Unit RqJA Typical Thermal Resistance, Junction−to−Ambient Parameter 148 °C/W YJL Typical Thermal Characteristics, Junction−to−Lead 14 °C/W 1. Device mounted on FR−4 PCB, board size = 76.2 mm x 114.3 mm per JESD51−3. ELECTRICAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. Symbol Parameter VF Instantaneous Forward Voltage (Note 2) IR Reverse Current at Rated VR Test Conditions Min Typ Max Unit IF = 3 A − − 1.15 V TJ = 25°C − − 10 mA TJ = 125°C − − 250 trr Reverse Recovery Time IF = 0.5 A, IR = 1 A, Irr = 0.25 A − 1.5 − ms CJ Junction Capacitance VR = 4 V, f = 1 MHz − 40 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 ms, 1% duty cycle. © Semiconductor Components Industries, LLC, 2018 April, 2022 − Rev. 3 1 Publication Order Number: S3MB/D S3AB−S3MB TYPICAL PERFORMANCE CHARACTERISTICS Instantaneous Reverse Current (mA) Average Forward Current (A) 3.5 3 2.5 2 1.5 1 0.5 0 Resistive or inductive load 0 20 40 60 80 100 120 140 160 100 TJ = 125°C 10 1 TJ = 25°C 0.1 0 Figure 1. Forward Current Derating Curve 60 80 100 120 140 100 1 10 Instantaneous Forward Current (A) Peak Forward Surge Current (A) 8.3 ms Single Half Sine Wave 100 10 1 0.1 0.6 Number of Cycles at 60 Hz 10 f = 1.0 MHz Vsig = 50 mVp−p 1 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 Figure 4. Typical Forward Characteristics 100 1 Pulse Width = 300 ms 1% Duty Cycle Forward Voltage (V) Figure 3. Maximum Non−Repetitive Forward Surge Current Capacitance (pF) 40 Figure 2. Typical Reverse Characteristics 100 10 20 Percent of Rated Peak Reverse Voltage (%) Lead Temperature (5C) 10 Reverse Voltage (V) 100 Figure 5. Typical Junction Capacitance www.onsemi.com 2 1.6 S3AB−S3MB TEST CIRCUIT DIAGRAM 50 W 100 W Noninductive Noninductive trr +0.5 A (+) 50 Vdc (approx) (−) (−) DUT 1W Pulse Generator (Note 4) Non Inductive Oscilloscope (Note 3) 0 −0.25 A (+) −1.0 A Figure 6. Reverse Recovery Time Characteristic and Test Circuit Diagram NOTES: 3. Rise Time = 7 ns max. Input Impedance = 1 MW, 22 pF 4. Rise Time = 10 ns max. Source Impedance = 50 W, 22 pF ORDERING INFORMATION Device Code Marking Package Shipping† S3AB, NRVS3AB* S3AB 3000 / Tape & Reel S3BB, NRVS3BB* S3BB SMC (Pb−Free, Halide−Free) Part Number S3DB, NRVS3DB* S3DB S3GB, NRVS3GB* S3GB S3JB, NRVS3JB* S3JB S3KB, NRVS3KB* S3KB S3MB, NRVS3MB* S3MB †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403AF ISSUE O B 5.60 5.08 B M 0.13 DATE 31 AUG 2016 CBA 2.50 3.95 3.30 2.20 1.91 B B A 2.20 4.70 4.75 4.05 LAND PATTERN RECOMMENDATION 8° 0° 2.65 MAX A R0.15 4X 2.45 1.90 GAUGE PLANE 0.45 B C 0.30 0.05 0.203 0.050 2.15 1.65 0.13 M CBA 0.41 0.15 0 − 8° 1.60 0.75 DETAIL A SCALE 20 : 1 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO JEDEC DO214 VARIATION AA. B DOES NOT COMPLY JEDEC STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5−1994. F. LAND PATTERN STD. DIOM5336X240M. DOCUMENT NUMBER: DESCRIPTION: 98AON13441G SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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