S3M

S3A - S3N — General-Purpose Rectifiers S3A - S3N General-Purpose Rectifiers Features • • • • Low-Profile Package Glass-Passivated Junction UL Flammability Classification: 94V-0 UL Certified, UL #E258596 SMC/DO-214AB COLOR BAND DENOTES CATHODE ELECTRICAL SYMBOL Ordering Informations Part Number Top Mark Package Packing Method S3A S3A DO-214AB (SMC) Tape and Reel S3B S3B DO-214AB (SMC) Tape and Reel S3D S3D DO-214AB (SMC) Tape and Reel S3G S3G DO-214AB (SMC) Tape and Reel S3J S3J DO-214AB (SMC) Tape and Reel S3K S3K DO-214AB (SMC) Tape and Reel S3M S3M DO-214AB (SMC) Tape and Reel S3N S3N DO-214AB (SMC) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value S3A S3B S3D S3G S3J S3K S3M S3N VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current TL = 105°C 3.0 A IFSM Non-Repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave 100 A TSTG Storage Temperature Range -55 to +150 °C Operating Junction Temperature Range -55 to +150 °C TJ © 2001 Semiconductor Components Industries, LLC. October-2017, Rev. 3 50 100 200 400 600 800 1000 1200 Unit V Publication Order Number: S3N/D Symbol Value Unit Power Dissipation 2.6 W RθJA Thermal Resistance, Junction-to-Ambient 100 °C/W RθJL Thermal Resistance, Junction-to-Lead 13 °C/W PD Parameter Note: 1. Device is mounted on FR-4 PCB 0.013 mm. Land pattern size: refer to the package drawing. Trace size: force line = 50 mil & sense line = 4 mil. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Value S3A S3B S3D S3G S3J S3K S3M S3N Unit VF Maximum Forward Voltage IF = 3.0 A 1.2 V trr Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 2.5 μs IR Maximum Reverse Current at rated VR TA = 25°C 5 TA = 125°C 250 CT Typical Total Capacitance VR = 4.0 V, f = 1.0 MHz 60 www.onsemi.com 2 μA pF S3A - S3N — General-Purpose Rectifiers Thermal Characteristics(1) Average Rectified Forward Current, IF [A] 4.0 100 Forward Current, IF [A] 3.5 3.0 2.5 2.0 1.5 1.0 10 1 μs Pulse Width = 300μ 2% Duty Cycle 0.1 0.5 0.0 50 60 70 80 0.01 0.6 90 100 110 120 130 140 150 o Lead Temperature, [ C] 1.2 1.3 T A = 125 º C 100 80 60 40 8.3ms Single Half Sine-Wave 20 JEDEC Method 10 1 TA = 25 º C 0.1 1 2 5 10 20 50 Number of Cycles at 60Hz 100 Figure 3. Non-Repetitive Surge Current 50 TJ = 25º C 10 1 5 10 Reverse Voltage, VR [V] 50 0 20 40 60 80 100 % of Reverse Voltage, VR[V] 120 140 Figure 4. Reverse Current vs. Reverse Voltage 100 5 0.8 0.9 1 1.1 Forward Voltage, VF [V] 100 120 0 0.7 Figure 2. Forward Voltage Characteristics Reverse Current, IR [μA] Peak Forward Surge Current, IFSM [A] Figure 1. Forward Current Derating Curve Total Capacitance, CT [pF] TJ = 25º C 100 Figure 5. Total Capacitance www.onsemi.com 3 S3A - S3N — General-Purpose Rectifiers Typical Performance Characteristics S3A - S3N — General-Purpose Rectifiers Physical Dimensions Figure 6. 2-Lead, SMC, JEDEC DO-214, Variation AB www.onsemi.com 4 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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