DATA SHEET
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Dual General Purpose
Transistors
SOT−363
CASE 419B
STYLE 1
NPN/PNP Duals (Complementary)
BC846BPDW1,
BC847BPDW1,
BC848CPDW1 Series
(3)
Features
Q2
(4)
XX MG
G
1
XX = Device Code
M = Date Code
G = Pb−Free Package
MAXIMUM RATINGS − NPN
Value
Unit
Collector-Emitter Voltage
BC846
BC847
BC848
VCEO
Collector-Base Voltage
BC846
BC847
BC848
VCBO
Emitter−Base Voltage
VEBO
6.0
V
IC
100
mAdc
ICM
200
mAdc
Symbol
Value
Unit
Collector Current − Continuous
Collector Current − Peak
V
65
45
30
V
MAXIMUM RATINGS − PNP
Rating
Collector-Emitter Voltage
BC846
BC847
BC848
VCEO
Collector-Base Voltage
BC846
BC847
BC848
VCBO
Emitter−Base Voltage
VEBO
−6.0
V
IC
−100
mAdc
ICM
−200
mAdc
Collector Current − Continuous
Collector Current − Peak
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
80
50
30
V
−65
−45
−30
V
−80
−50
−30
(6)
6
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Symbol
(5)
MARKING DIAGRAM
• S Prefix for Automotive and Other Applications Requiring Unique
Rating
(1)
Q1
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
•
(2)
Mark Package
Shipping†
BC846BPDW1T1G,
SBC846BPDW1T1G
BB
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SBC846BPDW1T2G
BB
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SBC846BPDW1T3G
BB
SOT−363
10,000 /
(Pb−Free) Tape & Reel
BC847BPDW1T1G
BF
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SBC847BPDW1T1G
BF
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SBC847BPDW1T3G
BF
SOT−363
10,000 /
(Pb−Free) Tape & Reel
BC847BPDW1T2G
BF
SOT−363
3,000 /
(Pb−Free) Tape & Reel
BC848CPDW1T1G
BL
SOT−363
3,000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
May, 2022 − Rev. 13
1
Publication Order Number:
BC846BPDW1T1/D
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
380
250
3.0
mW
mW/°C
mW/°C
RqJA
328
°C/W
TJ, Tstg
−55 to +150
°C
Total Device Dissipation Per Device
FR− 5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846
BC847B
BC848
V(BR)CES
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846
BC847
BC848
V(BR)EBO
V
65
45
30
−
−
−
−
−
−
V
80
50
30
ICBO
−
−
−
V
80
50
30
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
−
−
−
−
−
−
−
−
−
V
6.0
6.0
6.0
−
−
−
−
−
−
−
−
−
−
15
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, BC847B
BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, BC847B
BC848C
hFE
Collector −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA) All devices except SBC847BPDW1T1G
SBC847BPDW1T1G only
(IC = 100 mA, IB = 5.0 mA) All devices
(IC = 2 mA, IB = 0.5 mA) SBC847BPDW1T1G only
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
Base −Emitter Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
−
−
−
150
270
−
−
200
420
290
520
475
800
−
−
−
−
−
−
−
0.024
0.25
0.1
0.6
−
−
−
0.7
0.9
−
−
580
−
660
−
700
770
100
−
−
−
−
4.5
V
V
mV
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
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2
−
−
10
MHz
pF
dB
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC846
BC847
BC848
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC846
BC847
BC848
V(BR)CES
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC846
BC847
BC848
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC846
BC847
BC848
V(BR)EBO
V
−65
−45
−30
−
−
−
−
−
−
V
−80
−50
−30
ICBO
−
−
−
V
−80
−50
−30
Collector Cutoff Current
(VCB = −30 V)
(VCB = −30 V, TA = 150°C)
−
−
−
−
−
−
−
−
−
V
−6.0
−6.0
−6.0
−
−
−
−
−
−
−
−
−
−
−15
−4.0
nA
mA
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC846B, BC847B
BC848C
(IC = −2.0 mA, VCE = −5.0 V)
BC846B, BC847B
BC848C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA) All devices except SBC847BPDW1T1G
SBC847BPDW1T1G only
(IC = −100 mA, IB = −5.0 mA) All devices
(IC = −2 mA, IB = −0.5 mA) SBC847BPDW1T1G only
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on)
−
−
−
150
270
−
−
200
420
290
520
475
800
−
−
−
−
−
−
−
−0.024
−0.3
−0.1
−0.65
−
−
−
−0.7
−0.9
−
−
−0.6
−
−
−
−0.75
−0.82
100
−
−
−
−
4.5
−
−
10
V
V
V
SMALL− SIGNAL CHARACTERISTICS
fT
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cob
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
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3
MHz
pF
dB
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC846
0.30
500
VCE = 5 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
400
25°C
300
200
−55°C
100
0
0.001
0.01
0.1
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.05
−55°C
0.0001
25°C
0.5
150°C
0.3
0.1
0.0001
0.001
0.01
0.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
2.0
-1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01
1.2
1.1
IC, COLLECTOR CURRENT (A)
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.001
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
0.6
0.2
25°C
Figure 1. DC Current Gain vs. Collector
Current
−55°C
0.4
150°C
0.10
IC, COLLECTOR CURRENT (A)
0.9
0.7
0.15
IC, COLLECTOR CURRENT (A)
IC/IB = 20
0.8
0.20
0
1
1.1
1.0
IC/IB = 20
0.25
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
-1.4
-1.8
qVB for VBE
-55°C to 125°C
-2.2
-2.6
-3.0
0.2
Figure 5. Collector Saturation Region
0.5
10 20
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
50
100
200
Figure 6. Base−Emitter Temperature Coefficient
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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC846
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
40
C, CAPACITANCE (pF)
TA = 25°C
20
Cib
10
6.0
Cob
4.0
2.0
0.1
0.2
0.5
1.0 2.0
10 20
5.0
VR, REVERSE VOLTAGE (VOLTS)
50
VCE = 5 V
TA = 25°C
500
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
100
Figure 7. Capacitance
Figure 8. Current−Gain − Bandwidth Product
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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS — BC846
0.30
500
400
25°C
300
−55°C
200
100
0
0.001
0.01
0.1
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.20
25°C
0.15
0.10
−55°C
0.05
0.0001
0.1
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
−55°C
IC/IB = 20
25°C
0.6
150°C
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
-2.0
-1.0
-1.6
IC =
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-0.8
-0.4
TJ = 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
IB, BASE CURRENT (mA)
-5.0
-10
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01
Figure 9. DC Current Gain vs. Collector
Current
0.7
-1.2
0.001
IC, COLLECTOR CURRENT (A)
0.8
0.2
150°C
IC, COLLECTOR CURRENT (A)
1.0
0.9
IC/IB = 20
0.25
0
1
VBE(on), BASE−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 5 V
-20
Figure 13. Collector Saturation Region
-1.4
-1.8
qVB for VBE
-55°C to 125°C
-2.2
-2.6
-3.0
-0.2
-0.5 -1.0
-50
-2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mA)
-100 -200
Figure 14. Base−Emitter Temperature Coefficient
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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS — BC846
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
40
C, CAPACITANCE (pF)
TJ = 25°C
20
Cib
10
8.0
6.0
Cob
4.0
2.0
-0.1 -0.2
-0.5
-1.0 -2.0
-5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
VCE = -5.0 V
500
200
100
50
20
-100
-1.0
-10
IC, COLLECTOR CURRENT (mA)
-50 -100
Figure 15. Capacitance
Figure 16. Current−Gain − Bandwidth Product
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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC847
0.30
500
VCE = 5 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
400
25°C
300
200
−55°C
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
0.1
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
−55°C
IC/IB = 20
25°C
150°C
0.7
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.01
Figure 17. DC Current Gain vs. Collector
Current
0.8
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.001
IC, COLLECTOR CURRENT (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
IC, COLLECTOR CURRENT (A)
0.9
0.2
150°C
0.20
0
1
1.1
1.0
IC/IB = 20
0.25
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
20
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2
Figure 21. Collector Saturation Region
10
1.0
IC, COLLECTOR CURRENT (mA)
Figure 22. Base−Emitter Temperature
Coefficient
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100
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
TYPICAL NPN CHARACTERISTICS − BC847
10
C, CAPACITANCE (pF)
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
Figure 23. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 24. Current−Gain − Bandwidth Product
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50
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS − BC847
0.35
150°C
VCE = 5 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
500
400
25°C
300
200
−55°C
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
−55°C
IC/IB = 20
25°C
150°C
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
1.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
-2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.1
1.2
1.1
IC, COLLECTOR CURRENT (A)
TA = 25°C
-1.6
-1.2
IC =
-10 mA
IC = -50 mA
IC = -20 mA
-0.4
0
0.01
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
0.7
-0.8
0.001
Figure 25. DC Current Gain vs. Collector
Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
IC, COLLECTOR CURRENT (A)
0.8
0.2
0.20
IC, COLLECTOR CURRENT (A)
1.0
0.9
150°C
0.25
0
1
IC/IB = 20
0.30
-0.02
-0.1
-1.0
IB, BASE CURRENT (mA)
IC = -200 mA
IC = -100 mA
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-10 -20
Figure 29. Collector Saturation Region
-0.2
-10
-1.0
IC, COLLECTOR CURRENT (mA)
Figure 30. Base−Emitter Temperature
Coefficient
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10
-100
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
10
Cib
7.0
C, CAPACITANCE (pF)
TA = 25°C
5.0
Cob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
TYPICAL PNP CHARACTERISTICS − BC847
400
300
200
150
VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 31. Capacitances
Figure 32. Current−Gain − Bandwidth Product
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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC848
1000
0.30
hFE, DC CURRENT GAIN
900
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 5 V
800 150°C
700
600
25°C
500
400
300 −55°C
200
100
0
0.001
0.01
0.1
−55°C
0.05
0.0001
IC/IB = 20
−55°C
25°C
0.7
150°C
0.6
0.5
0.4
0.3
0.1
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 35. Base Emitter Saturation Voltage vs.
Collector Current
Figure 36. Base Emitter Voltage vs. Collector
Current
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.01
Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current
0.8
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.001
Figure 33. DC Current Gain vs. Collector
Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.10
IC, COLLECTOR CURRENT (A)
0.9
0.2
25°C
0.15
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
0.20
0
1
IC/IB = 20
0.25
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
20
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2
Figure 37. Collector Saturation Region
10
1.0
IC, COLLECTOR CURRENT (mA)
Figure 38. Base−Emitter Temperature
Coefficient
www.onsemi.com
12
100
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
TYPICAL NPN CHARACTERISTICS − BC848
10
C, CAPACITANCE (pF)
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
Figure 39. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 40. Current−Gain − Bandwidth Product
www.onsemi.com
13
50
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS − BC848
1000
0.30
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
900
hFE, DC CURRENT GAIN
VCE = 5 V
800
700
25°C
600
500
400
−55°C
300
200
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
−55°C
IC/IB = 20
25°C
150°C
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 43. Base Emitter Saturation Voltage vs.
Collector Current
Figure 44. Base Emitter Voltage vs. Collector
Current
1.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
-2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.1
Figure 42. Collector Emitter Saturation Voltage
vs. Collector Current
0.6
TA = 25°C
-1.6
-1.2
IC =
-10 mA
IC = -50 mA
IC = -20 mA
-0.4
0
0.01
Figure 41. DC Current Gain vs. Collector
Current
0.7
-0.8
0.001
IC, COLLECTOR CURRENT (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
IC, COLLECTOR CURRENT (A)
0.8
0.2
150°C
0.20
0
1
1.0
0.9
IC/IB = 20
0.25
-0.02
-0.1
-1.0
IB, BASE CURRENT (mA)
IC = -200 mA
IC = -100 mA
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-10 -20
Figure 45. Collector Saturation Region
-0.2
-10
-1.0
IC, COLLECTOR CURRENT (mA)
Figure 46. Base−Emitter Temperature
Coefficient
www.onsemi.com
14
-100
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
10
Cib
7.0
C, CAPACITANCE (pF)
TA = 25°C
5.0
Cob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
TYPICAL PNP CHARACTERISTICS − BC848
400
300
200
150
VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 47. Capacitances
Figure 48. Current−Gain − Bandwidth Product
www.onsemi.com
15
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
ZqJA(t) = r(t) RqJA
RqJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.001
0
1.0
10
100
1.0k
10k
100k
1.0M
t, TIME (ms)
Figure 49. Thermal Response
IC, COLLECTOR CURRENT (mA)
1000
The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
The data of Figure 50 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk) may be calculated from the data in Figure
49. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values
less than the limitations imposed by the secondary breakdown.
1 ms
10 ms
100 ms
100
10
1 ms
3 ms
10 ms
100 ms
BC846
1s
1.0
1.0
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
100
Figure 50. Safe Operating Area − BC846
1000
1 ms
10 ms
100 ms
1 ms
3 ms
10 ms
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1000
100 ms
10
1.0
1.0
BC847
1s
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
100
10
1.0
1.0
100
Figure 51. Safe Operating Area − BC847
BC848
1 ms
10 ms
100 ms
1 ms
3 ms
10 ms
100 ms
1s
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 52. Safe Operating Area − BC848
www.onsemi.com
16
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
1
SCALE 2:1
DATE 11 DEC 2012
2X
aaa H D
D
H
A
D
6
5
GAGE
PLANE
4
1
2
L
L2
E1
E
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
b
ddd
TOP VIEW
C A-B D
M
A2
DETAIL A
A
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
ccc C
A1
SIDE VIEW
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
6X
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
GENERIC
MARKING DIAGRAM*
6
XXXMG
G
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
0.66
1
2.50
0.65
PITCH
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*Date Code orientation and/or position may
vary depending upon manufacturing location.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
6. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
STYLE 7:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
4. SOURCE 1
5. DRAIN 1
6. GATE 2
STYLE 8:
CANCELLED
STYLE 9:
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
5. BASE 2
6. COLLECTOR 2
STYLE 10:
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
4. DRAIN 1
5. DRAIN 2
6. GATE 2
STYLE 11:
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
STYLE 12:
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
STYLE 13:
PIN 1. ANODE
2. N/C
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 14:
PIN 1. VREF
2. GND
3. GND
4. IOUT
5. VEN
6. VCC
STYLE 15:
PIN 1. ANODE 1
2. ANODE 2
3. ANODE 3
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
STYLE 16:
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
5. EMITTER 1
6. COLLECTOR 1
STYLE 17:
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
5. EMITTER 2
6. COLLECTOR 1
STYLE 18:
PIN 1. VIN1
2. VCC
3. VOUT2
4. VIN2
5. GND
6. VOUT1
STYLE 19:
PIN 1. I OUT
2. GND
3. GND
4. V CC
5. V EN
6. V REF
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
STYLE 22:
PIN 1. D1 (i)
2. GND
3. D2 (i)
4. D2 (c)
5. VBUS
6. D1 (c)
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
4. N/C
5. CH2
6. N/C
STYLE 24:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 25:
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
5. EMITTER
6. COLLECTOR 1
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 29:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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