BC856BDW1T1G,
SBC856BDW1T1GSeries,
BC857BDW1T1G,
SBC857BDW1T1GSeries,
BC858CDW1T1G Series
Dual General Purpose
Transistors
www.onsemi.com
PNP Duals
SOT−363/SC−88
CASE 419B
STYLE 1
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
(3)
Features
(2)
(1)
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Q1
(4)
MAXIMUM RATINGS
Rating
Q2
(5)
(6)
MARKING DIAGRAM
Symbol
Value
Unit
Collector −Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858
VCEO
Collector −Base Voltage
BC856, SBC856
BC857, SBC857
BC858
VCBO
Emitter −Base Voltage
VEBO
−5.0
V
Collector Current −Continuous
IC
−100
mAdc
Collector Current − Peak
IC
−200
mAdc
Symbol
Max
Unit
Total Device Dissipation
Per Device
FR− 5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD
380
250
mW
mW
3.0
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
6
V
−65
−45
−30
3x MG
G
1
V
−80
−50
−30
3x
M
G
= Specific Device Code
x = B, F, G, or L
(See Ordering Information)
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Junction and Storage Temperature
Range
TJ, Tstg
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
°C/W
328
°C
−55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
August, 2016 − Rev. 10
1
Publication Order Number:
BC856BDW1T1/D
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC856, SBC856 Series
BC857B, SBC857B Only
BC858 Series
V(BR)CES
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V(BR)EBO
V
−65
−45
−30
−
−
−
V
−80
−50
−30
−
−
−
−
−
−
V
−80
−50
−30
Collector Cutoff Current
(VCB = −30 V)
(VCB = −30 V, TA = 150°C)
−
−
−
−
−
−
−
−
−
V
−5.0
−5.0
−5.0
−
−
−
−
−
−
−
−
−
−
−15
−4.0
ICBO
nA
mA
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
(IC = −2.0 mA, VCE = −5.0 V)
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on)
−
−
−
150
270
−
−
220
420
290
520
475
800
−
−
−
−
−0.3
−0.65
−
−
−0.7
−0.9
−
−
−0.6
−
−
−
−0.75
−0.82
100
−
−
−
−
4.5
−
−
10
V
V
V
SMALL− SIGNAL CHARACTERISTICS
fT
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cob
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
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2
MHz
pF
dB
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
TYPICAL CHARACTERISTICS − BC856/SBC856
TJ = 25°C
VCE = -5.0 V
TA = 25°C
-0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
-1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
-0.6
VBE @ VCE = -5.0 V
-0.4
-0.2
0.2
VCE(sat) @ IC/IB = 10
0
-0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA)
-0.1 -0.2
-0.5
-50 -100 -200
-5.0 -10 -20
-1.0 -2.0
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
-2.0
-1.0
-1.6
-1.2
IC =
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-0.8
-0.4
TJ = 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
IB, BASE CURRENT (mA)
-5.0
-10
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
-20
-1.4
-1.8
-2.6
-3.0
-0.2
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
Cib
10
8.0
Cob
4.0
2.0
-0.1 -0.2
-0.5
-1.0 -2.0
-5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
-0.5 -1.0
-50
-2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mA)
-100 -200
Figure 4. Base−Emitter Temperature Coefficient
40
6.0
-55°C to 125°C
-2.2
Figure 3. Collector Saturation Region
20
qVB for VBE
500
VCE = -5.0 V
200
100
50
20
-100
-1.0
-10
IC, COLLECTOR CURRENT (mA)
-50 -100
Figure 5. Capacitance
Figure 6. Current−Gain − Bandwidth Product
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3
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
TYPICAL CHARACTERISTICS − BC857/SBC857/BC858
-1.0
1.5
TA = 25°C
-0.9
VCE = -10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
-0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
-0.7
VBE(on) @ VCE = -10 V
-0.6
-0.5
-0.4
-0.3
-0.2
0.3
VCE(sat) @ IC/IB = 10
-0.1
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
IC, COLLECTOR CURRENT (mAdc)
0
-0.1 -0.2
-100 -200
Figure 7. Normalized DC Current Gain
1.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
TA = 25°C
-1.6
-1.2
IC =
-10 mA
IC = -50 mA
IC = -200 mA
IC = -100 mA
IC = -20 mA
-0.4
0
-0.02
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-10 -20
-0.1
-1.0
IB, BASE CURRENT (mA)
-0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-10
-1.0
IC, COLLECTOR CURRENT (mA)
-100
Figure 10. Base−Emitter Temperature
Coefficient
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 9. Collector Saturation Region
C, CAPACITANCE (pF)
-100
-50
Figure 8. “Saturation” and “On” Voltages
-2.0
-0.8
-0.5 -1.0 -2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mAdc)
-20 -30 -40
400
300
200
150
VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 11. Capacitances
Figure 12. Current−Gain − Bandwidth Product
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4
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
ZqJA(t) = r(t) RqJA
RqJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.001
0
1.0
10
100
1.0k
10k
100k
1.0M
t, TIME (ms)
Figure 13. Thermal Response
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse curves
are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C.
TJ(pk) may be calculated from the data in Figure 13. At high
case or ambient temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by the secondary breakdown.
-200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
-100
-50
-10
-5.0
-2.0
-1.0
TA = 25°C
TJ = 25°C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
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5
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
ORDERING INFORMATION
Device Marking
Package
Shipping†
BC856BDW1T1G
3B
SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC856BDW1T1G
3B
SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC856BDW1T3G
3B
SOT−363
(Pb−Free)
10,000 / Tape & Reel
SBC856BDW1T3G
3B
SOT−363
(Pb−Free)
10,000 / Tape & Reel
BC857BDW1T1G
3F
SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC857BDW1T1G
3F
SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC857CDW1T1G
3G
SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC857CDW1T1G
3G
SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC858CDW1T1G
3L
SOT−363
(Pb−Free)
3,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
1
SCALE 2:1
DATE 11 DEC 2012
2X
aaa H D
D
H
A
D
6
5
GAGE
PLANE
4
1
2
L
L2
E1
E
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
b
ddd
TOP VIEW
C A-B D
M
A2
DETAIL A
A
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
ccc C
A1
SIDE VIEW
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
6X
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
GENERIC
MARKING DIAGRAM*
6
XXXMG
G
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
0.66
1
2.50
0.65
PITCH
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*Date Code orientation and/or position may
vary depending upon manufacturing location.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
6. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
STYLE 7:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
4. SOURCE 1
5. DRAIN 1
6. GATE 2
STYLE 8:
CANCELLED
STYLE 9:
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
5. BASE 2
6. COLLECTOR 2
STYLE 10:
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
4. DRAIN 1
5. DRAIN 2
6. GATE 2
STYLE 11:
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
STYLE 12:
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
STYLE 13:
PIN 1. ANODE
2. N/C
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 14:
PIN 1. VREF
2. GND
3. GND
4. IOUT
5. VEN
6. VCC
STYLE 15:
PIN 1. ANODE 1
2. ANODE 2
3. ANODE 3
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
STYLE 16:
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
5. EMITTER 1
6. COLLECTOR 1
STYLE 17:
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
5. EMITTER 2
6. COLLECTOR 1
STYLE 18:
PIN 1. VIN1
2. VCC
3. VOUT2
4. VIN2
5. GND
6. VOUT1
STYLE 19:
PIN 1. I OUT
2. GND
3. GND
4. V CC
5. V EN
6. V REF
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
STYLE 22:
PIN 1. D1 (i)
2. GND
3. D2 (i)
4. D2 (c)
5. VBUS
6. D1 (c)
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
4. N/C
5. CH2
6. N/C
STYLE 24:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 25:
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
5. EMITTER
6. COLLECTOR 1
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 29:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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