SBRS81100T3G

Schottky Power Rectifier Surface Mount Power Package MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G, SBRS81100N, SBRS8190N Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state-of-the-art devices have the following features: www.onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 90, 100 VOLTS Features • • • • • • • • Mechanical Characteristics • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • SMB CASE 403A Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction High Blocking Voltage − 100 Volts 175°C Operating Junction Temperature Guardring for Stress Protection AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2,500 units per reel Cathode Polarity Band MARKING DIAGRAM AYWW B1xG G B1 x = Device Code = C for MBRS1100T3 9 for MBRS190T3 A = Assembly Location** Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March, 2020 − Rev. 15 1 Publication Order Number: MBRS1100T3/D MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G, SBRS81100N, SBRS8190N MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBRS190T3 MBRS1100T3 VRRM VRWM VR Average Rectified Forward Current TL = 163°C TL = 148°C IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction Temperature (Note 1) Voltage Rate of Change Value Unit V 90 100 A 1.0 2.0 A 50 TJ −65 to +175 °C dv/dt 10 V/ns Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RqJL 22 °C/W Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 25°C) VF 0.75 V Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) IR Thermal Resistance − Junction−to−Lead (TL = 25°C) ELECTRICAL CHARACTERISTICS Characteristic mA 0.5 5.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Marking Package Shipping† MBRS1100T3G B1C SMB (Pb−Free) 2500 / Tape & Reel SBRS81100T3G* B1C SMB (Pb−Free) 2500 / Tape & Reel SBRS81100T3G−VF01* B1C SMB (Pb−Free) 2500 / Tape & Reel MBRS190T3G B19 SMB (Pb−Free) 2500 / Tape & Reel SBRS8190T3G* B19 SMB (Pb−Free) 2500 / Tape & Reel SBRS81100NT3G* B1C SMB (Pb−Free) 2500 / Tape & Reel SBRS8190NT3G* B19 SMB (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements www.onsemi.com 2 MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G, SBRS81100N, SBRS8190N 1k 400 200 100 40 20 10 4 2 1 0.4 0.2 0.1 0.04 0.02 0.01 20 10 TJ = 150°C 5 2 100°C 1 0.5 25°C 0.2 0.1 0.05 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TJ = 150°C I R , REVERSE CURRENT ( μA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS 1 1.1 1.2 1.3 125°C 100°C 25°C 0 10 20 30 40 50 60 70 80 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current* 90 100 I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 3.2 2.8 TJ = 100°C 2.4 2.0 SQUARE WAVE 1.6 DC 1.2 0.8 0.4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2.0 DC 1.5 1.0 SQUARE WAVE 0.5 0 145 150 155 160 165 170 IF(AV), AVERAGE FORWARD CURRENT (AMPS) TL, LEAD TEMPERATURE (°C) Figure 3. Power Dissipation Figure 4. Current Derating, Lead C, CAPACITANCE (pF) PF(AV), AVERAGE POWER DISSIPATION (WATTS) *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 NOTE: TYPICAL CAPACITANCE NOTE: AT 0 V = 270 pF 0.1 0.2 0.5 1 2 5 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance www.onsemi.com 3 50 100 175 180 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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