MBD701,
MMBD701L,
SMMBD701L
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
www.onsemi.com
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
•
•
•
•
•
•
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
Very Low Capacitance − 1.0 pF @ VR = 20 V
High Reverse Voltage − to 70 V
Low Reverse Leakage − 200 nA (Max)
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC Qualified and PPAP
Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
V
Forward Power Dissipation
@ TA = 25°C
MBD701
MMBD701L, SMMBD701L
PF
mW
280
200
Derate above 25°C
MBD701
MMBD701L, SMMBD701L
mW/°C
2.8
2.0
Operating Junction Temperature
Range
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 7
1
TO−92 2−Lead
CASE 182
STYLE 1
SOT−23 (TO−236)
CASE 318
STYLE 8
TO−92
SOT−23
2
CATHODE
1
ANODE
3
CATHODE
1
ANODE
MARKING DIAGRAMS
MBD
701
AYW G
G
5H M G
G
1
TO−92
SOT−23
A
= Assembly Location
Y
= Year
W = Work Week
5H = Device Code (SOT−23)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MBD701/D
MBD701, MMBD701L, SMMBD701L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10 mAdc)
Symbol
Min
Typ
Max
70
−
−
−
0.5
1.0
−
9.0
200
−
0.42
0.5
−
0.7
1.0
V(BR)R
Total Capacitance
(VR = 20 V, f = 1.0 MHz) Figure 1
CT
Reverse Leakage
(VR = 35 V) Figure 3
IR
Forward Voltage
(IF = 1.0 mAdc) Figure 4
VF
Forward Voltage
(IF = 10 mAdc) Figure 4
VF
Unit
V
pF
nAdc
Vdc
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Package
Shipping†
MBD701G
TO−92
(Pb−Free)
1,000 Units / Bulk
MMBD701LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SMMBD701LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBD701LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
MBD701, MMBD701L, SMMBD701L
TYPICAL ELECTRICAL CHARACTERISTICS
500
2.0
t , MINORITY CARRIER LIFETIME (ps)
C T, TOTAL CAPACITANCE (pF)
f = 1.0 MHz
1.6
1.2
0.8
0.4
400
KRAKAUER METHOD
300
200
100
0
0
0
5.0
10
15
20
25
30
35
VR, REVERSE VOLTAGE (VOLTS)
40
45
50
0
10
Figure 1. Total Capacitance
80
90
100
100
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (m A)
30
40
50
60
70
IF, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
10
TA = 100°C
1.0
TA = 75°C
0.1
0.01
0.001
20
TA = 25°C
10
TA = -40°C
TA = 85°C
1.0
TA = 25°C
0.1
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
40
50
0
Figure 3. Reverse Leakage
IF(PEAK)
0.2
0.4
0.8
1.2
VF, FORWARD VOLTAGE (VOLTS)
1.6
Figure 4. Forward Voltage
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
STORAGE
CONDUCTION
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
www.onsemi.com
3
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
2.0
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 182−06
ISSUE L
DATE 04/18/1998
SCALE 1:1
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
SEATING
PLANE
D
ÉÉ
ÉÉ
L
P
J
K
D
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
SECTION X−X
X X
G
H
V
1
C
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.050 BSC
0.100 BSC
0.014
0.016
0.500
--0.250
--0.080
0.105
--0.050
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.21
4.32
5.33
3.18
4.19
0.407
0.533
1.27 BSC
2.54 BSC
0.36
0.41
12.70
--6.35
--2.03
2.66
--1.27
2.93
--3.43
---
N
2
N
STYLE 1:
PIN 1. ANODE
2. CATHODE
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 2:
PIN 1. CATHODE
2. ANODE
98ASB42118B
TO−92 (TO−226)
STYLE 3:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
STYLE 4:
CANCELLED
STYLE 5:
PIN 1. INPUT
2. OUTPUT
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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