SMMBTA92LT3G

MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon www.onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol 92 93 Unit Collector −Emitter Voltage VCEO −300 −200 Vdc Collector −Base Voltage VCBO −300 −200 Vdc Emitter −Base Voltage VEBO −5.0 −5.0 Vdc Collector Current — Continuous IC −500 mAdc DEVICE MARKING THERMAL CHARACTERISTICS Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation (Note 2) Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature MARKING DIAGRAM 3 1 2 SOT−23 (TO−236AF) CASE 318 STYLE 6 MMBTA92L, SMMBTA92L = 2D; MMBTA93LT1 = 2E Characteristic 2 EMITTER 2x M G 2x MG G = Specific Device Code = Date Code* = Pb−Free Package Symbol Max Unit PD 225 mW 1.8 mW/°C (*Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ORDERING INFORMATION Package Shipping† MMBTA92LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SMMBTA92LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBTA92LT3G SOT−23 10000 / Tape & Reel (Pb−Free) SMMBTA92LT3G SOT−23 10000 / Tape & Reel (Pb−Free) MMBTA93LT1G SOT−23 (Pb−Free) Device 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 11 1 Publication Order Number: MMBTA92LT1/D MMBTA92L, SMMBTA92L, MMBTA93L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max −300 −200 − − −300 −200 − − −5.0 − − − −0.25 −0.25 − −0.1 Both Types Both Types 25 40 − − MMBTA92, SMMBTA92 MMBTA93 25 25 − − − − −0.5 −0.5 VBE(sat) − −0.9 Vdc fT 50 − MHz − − 6.0 8.0 Characteristic Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) V(BR)CEO MMBTA92, SMMBTA92 MMBTA93 Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) Vdc V(BR)CBO MMBTA92, SMMBTA92 MMBTA93 Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −200 Vdc, IE = 0) (VCB = −160 Vdc, IE = 0) Vdc mAdc ICBO MMBTA92, SMMBTA92 MMBTA93 Emitter Cutoff Current (VEB = −3.0 Vdc, IC = 0) IEBO Vdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) hFE (IC = −30 mAdc, VCE = −10 Vdc) Collector −Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) − VCE(sat) MMBTA92, SMMBTA92 MMBTA93 Base−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = −20 Vdc, IE = 0, f = 1.0 MHz) Ccb MMBTA92, SMMBTA92 MMBTA93 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 250 200 25°C 150 -55°C 100 50 0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain www.onsemi.com 2 100 MMBTA92L, SMMBTA92L, MMBTA93L f, T CURRENT-GAIN — BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 TJ = 25°C VCE = 20 Vdc F = 20 MHz 30 10 1000 1 Figure 2. Capacitance 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current−Gain − Bandwidth 1.4 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. “ON” Voltages 1000 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) 1.2 100 ms 1.0 s 10 ms 100 ms 100 10 ms 1.0 ms 10 Single Pulse Test TA = 25°C 1 1 100 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. Safe Operating Area www.onsemi.com 3 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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