SMUN5313DW1T1G

MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 Complementary Bias Resistor Transistors R1 = 47 kW, R2 = 47 kW www.onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. PIN CONNECTIONS (3) (2) R1 • Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant R2 Q1 Q2 R2 R1 Features • • • • (1) (4) (5) (6) MARKING DIAGRAMS 6 SOT−363 CASE 419B−02 13 MG G 1 MAXIMUM RATINGS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted) Symbol Max Unit VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 10 Vdc Collector Current − Continuous Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Package Shipping† MUN5313DW1T1G, SMUN5313DW1T1G* SOT−363 3,000/Tape & Reel SMUN5313DW1T3G* SOT−363 10,000/Tape & Reel NSBC144EPDXV6T1G NSVBC144EPDXV6T1G* SOT−563 4,000/Tape & Reel NSBC144EPDXV6T5G SOT−563 8,000/Tape & Reel NSBC144EPDP6T5G SOT−963 8,000/Tape & Reel Device SOT−563 CASE 463A 13 MG 1 K Rating Collector-Base Voltage SOT−963 CASE 527AD M 1 13/K M G = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 June, 2017 − Rev. 4 1 Publication Order Number: DTC144EP/D MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 187 256 1.5 2.0 mW MUN5313DW1 (SOT−363) ONE JUNCTION HEATED Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient PD (Note 1) (Note 2) RqJA mW/°C 670 490 °C/W 250 385 2.0 3.0 mW MUN5313DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3) PD Total Device Dissipation (Note 1) TA = 25°C (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient (Note 2) RqJA (Note 1) Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL Junction and Storage Temperature Range TJ, Tstg mW/°C °C/W 493 325 °C/W 188 208 −55 to +150 °C 357 2.9 mW mW/°C NSBC144EPDXV6 (SOT−563) ONE JUNCTION HEATED PD Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction to Ambient RqJA (Note 1) °C/W 350 NSBC144EPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3) PD Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction to Ambient 500 4.0 RqJA (Note 1) Junction and Storage Temperature Range TJ, Tstg mW mW/°C °C/W 250 −55 to +150 °C 231 269 1.9 2.2 MW NSBC144EPDP6 (SOT−963) ONE JUNCTION HEATED PD Total Device Dissipation (Note 4) TA = 25°C (Note 5) Derate above 25°C (Note 4) (Note 5) Thermal Resistance, Junction to Ambient (Note 5) RqJA (Note 4) mW/°C °C/W 540 464 NSBC144EPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3) PD Total Device Dissipation (Note 4) TA = 25°C (Note 5) Derate above 25°C (Note 4) (Note 5) Thermal Resistance, Junction to Ambient (Note 5) 339 408 2.7 3.3 RqJA (Note 4) Junction and Storage Temperature Range 1. 2. 3. 4. 5. TJ, Tstg FR−4 @ Minimum Pad. FR−4 @ 1.0 × 1.0 Inch Pad. Both junction heated values assume total power is sum of two equally powered channels. FR−4 @ 100 mm2, 1 oz. copper traces, still air. FR−4 @ 500 mm2, 1 oz. copper traces, still air. www.onsemi.com 2 MW mW/°C °C/W 369 306 −55 to +150 °C MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 ELECTRICAL CHARACTERISTICS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted) Symbol Characteristic Min Typ Max − − 100 − − 500 − − 0.1 50 − − 50 − − 80 140 − − − 0.25 − − 1.2 1.2 − − − − 1.9 2.0 − − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (Note 6) (IC = 2.0 mA, IB = 0) V(BR)CEO Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 6) (IC = 5.0 mA, VCE = 10 V) Collector-Emitter Saturation Voltage (Note 6) (IC = 10 mA, IB = 0.3 mA) VCE(sat) Input Voltage (Off) (VCE = 5.0 V, IC = 100 mA) (NPN) (VCE = 5.0 V, IC = 100 mA) (PNP) Vi(off) Input Voltage (On) (VCE = 0.2 V, IC = 3.0 mA) (NPN) (VCE = 0.2 V, IC = 3.0 mA) (PNP) Vi(on) Output Voltage (On) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) VOL Output Voltage (Off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH V Vdc Vdc Vdc Vdc Input Resistor R1 32.9 47 61.1 Resistor Ratio R1/R2 0.8 1.0 1.2 6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%. PD, POWER DISSIPATION (mW) 400 350 300 250 200 (1) SOT−363; 1.0 × 1.0 Inch Pad (2) SOT−563; Minimum Pad (3) SOT−963; 100 mm2, 1 oz. Copper Trace (1) (2) (3) 150 100 50 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve www.onsemi.com 3 kW MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 10 1000 IC/IB = 10 VCE = 10 V hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS − NPN TRANSISTOR MUN5313DW1, NSBC144EPDXV6 1 TA = −25°C 25°C 75°C 0.1 TA = 75°C 25°C 0.01 10 0 50 20 40 IC, COLLECTOR CURRENT (mA) −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) vs. IC Figure 3. DC Current Gain 3.2 IC, COLLECTOR CURRENT (mA) 100 f = 10 kHz IE = 0 A TA = 25°C 2.8 2.4 2.0 1.6 1.2 0.8 0.4 10 TA = −25°C 75°C 25°C 1 0.1 0.01 VO = 5 V 0.001 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) 50 0 2 4 6 Vin, INPUT VOLTAGE (V) 100 VO = 0.2 V TA = −25°C 10 25°C 75°C 1 0.1 0 10 8 Figure 5. Output Current vs. Input Voltage Figure 4. Output Capacitance Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current www.onsemi.com 4 50 10 MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 1 1000 IC/IB = 10 TA = −25°C hFE, CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS − PNP TRANSISTOR MUN5313DW1, NSBC144EPDXV6 25°C 75°C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA = 75°C 25°C 10 40 −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain 100 8 IC, COLLECTOR CURRENT (mA) f = 10 kHz lE = 0 A TA = 25°C 7 6 5 4 3 2 1 TA = 75°C 25°C −25°C 10 1 0.1 0.01 VO = 5 V 0.001 0 0 10 0 50 20 30 40 VR, REVERSE VOLTAGE (V) 1 2 3 4 VO = 2 V TA = −25°C 25°C 75°C 1 0.1 0 6 7 8 9 Figure 10. Output Current vs. Input Voltage 100 10 5 Vin, INPUT VOLTAGE (V) Figure 9. Output Capacitance Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) 10 9 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current www.onsemi.com 5 50 10 MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 10 1000 IC/IB = 10 25°C 1 −55°C 150°C 0.1 0.01 150°C 100 −55°C 10 1 0 30 20 40 10 IC, COLLECTOR CURRENT (mA) 1 10 IC, COLLECTOR CURRENT (mA) 0.1 50 Figure 12. VCE(sat) vs. IC 100 Figure 13. DC Current Gain 100 2.4 150°C 2.0 IC, COLLECTOR CURRENT (mA) f = 10 kHz IE = 0 A TA = 25°C 1.6 1.2 0.8 0.4 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) −55°C 10 25°C 1 0.1 0.01 0.001 50 VO = 5 V 0 4 12 16 20 8 Vin, INPUT VOLTAGE (V) 100 25°C 10 −55°C 150°C 1 VO = 0.2 V 0.1 0 24 Figure 15. Output Current vs. Input Voltage Figure 14. Output Capacitance Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) 25°C VCE = 10 V hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS − NPN TRANSISTOR NSBC144EPDP6 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage vs. Output Current www.onsemi.com 6 50 28 MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 1 1000 25°C IC/IB = 10 150°C 25°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS − PNP TRANSISTOR NSBC144EPDP6 150°C 0.1 −55°C −55°C 10 VCE = 10 V 0.01 1 0 10 20 30 40 0.1 50 10 1 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) vs. IC Figure 18. DC Current Gain 7 100 6 IC, COLLECTOR CURRENT (mA) f = 10 kHz IE = 0 A TA = 25°C 5 4 3 2 1 0 150°C −55°C 10 25°C 1 0.1 0.01 VO = 5 V 0.001 0 10 20 30 40 0 50 4 8 12 16 20 24 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 19. Output Capacitance Figure 20. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) 100 −55°C 25°C 10 150°C 1 VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage vs. Output Current www.onsemi.com 7 50 28 MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D A D 6 5 GAGE PLANE 4 L L2 E1 E 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. H DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X ddd TOP VIEW DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd b A2 M C A-B D DETAIL A A 6X ccc C A1 SIDE VIEW C SEATING PLANE c MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 END VIEW RECOMMENDED SOLDERING FOOTPRINT* 6X 6X 0.30 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE G D −X− 6 5 1 2 A L 4 E −Y− 3 b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 9 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 PACKAGE DIMENSIONS SOT−963 CASE 527AD ISSUE E X Y D 6 5 4 1 2 3 HE E DIM A b C D E e HE L L2 C SIDE VIEW TOP VIEW e 6X 6X 6X L2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A L MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.95 1.00 1.05 0.19 REF 0.05 0.10 0.15 b 0.08 X Y BOTTOM VIEW RECOMMENDED MOUNTING FOOTPRINT* 6X 6X 0.35 0.20 PACKAGE OUTLINE 1.20 0.35 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 10 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative DTC144EP/D