SNRVUD620CTT4G

Switch-mode Power Rectifier DPAK Surface Mount Package MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • • • Ultrafast 35 Nanosecond Recovery Time Low Forward Voltage Drop Low Leakage ESD Rating: ♦ Human Body Model = 3B (> 8 kV) ♦ Machine Model = C (> 400 V) NRVUD, SRVUD and SNRVUD Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds www.onsemi.com ULTRAFAST RECTIFIER 6.0 AMPERES 200 VOLTS DPAK CASE 369C 1 4 3 MARKING DIAGRAMS AYWW U 620TG AYWW U S620TG A = Assembly Location* Y = Year WW = Work Week U620T = Device Code (MURD/NRVUD/ SNRVUD620CT) US620T = Device Code (SRVUD620CT) G = Pb−Free Package * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† MURD620CTG DPAK (Pb−Free) 75 Units / Rail NRVUD620CTG DPAK (Pb−Free) 75 Units / Rail MURD620CTT4G DPAK (Pb−Free) 2,500 / Tape & Reel NRVUD620CTT4G DPAK (Pb−Free) 2,500 / Tape & Reel SRVUD620CTT4G DPAK (Pb−Free) 2,500 / Tape & Reel SNRVUD620CTT4G DPAK (Pb−Free) 2,500 / Tape & Reel NRVUD620CTG− VF01 DPAK (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 August, 2020 − Rev. 15 1 Publication Order Number: MURD620CT/D MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 200 V Average Rectified Forward Current (TC = 140°C) Per Diode Per Device IF(AV) A 3.0 6.0 Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 145°C) Per Diode IF A 6.0 Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, 60 Hz) IFSM Operating Junction and Storage Temperature Range TJ, Tstg 50 −65 to +175 A °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Per Diode) Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Case RqJC 9 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 80 °C/W Symbol Value Unit 1. Rating applies when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (Per Diode) Characteristic Maximum Instantaneous Forward Voltage Drop (Note 2) (iF = 3 Amps, TC = 25°C) (iF = 3 Amps, TC = 125°C) (iF = 6 Amps, TC = 25°C) (iF = 6 Amps, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (TJ = 25°C, Rated dc Voltage) (TJ = 125°C, Rated dc Voltage) iR Maximum Reverse Recovery Time (IF = 1 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25°C) (IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25°C) trr 1 0.96 1.2 1.13 5 250 35 25 V mA ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT TYPICAL CHARACTERISTICS 100 100 IR, REVERSE CURRENT (mA) 70 50 20 10 7.0 150°C 1 100°C 0.1 0.01 25°C 0.001 0.0001 0 20 40 5.0 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) Figure 2. Typical Leakage Current* (Per Leg) 3.0 175°C * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficiently below rated VR. TJ = 25°C 2.0 150°C 100°C PF(AV) , AVERAGE POWER DISSIPATION (WATTS) i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 30 TJ = 175°C 10 1.0 0.7 0.5 0.3 0.2 0.1 0 0.2 0.4 0.6 1.0 0.8 1.2 1.4 vF, INSTANTANEOUS VOLTAGE (V) 14 13 12 11 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 5.0 10 SINE WAVE IPK/IAV = 20 dc SQUARE WAVE TJ = 175°C 1.0 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 1. Typical Forward Voltage (Per Leg) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 3. Average Power Dissipation (Per Leg) 8.0 RATED VOLTAGE APPLIED RqJC = 9°C/W 7.0 6.0 TJ = 175°C 5.0 dc 4.0 SINE WAVE OR SQUARE WAVE 3.0 2.0 1.0 0 100 110 120 130 140 150 160 170 180 4.0 RATED VOLTAGE APPLIED RqJA = 80°C/W 3.5 3.0 SURFACE MOUNTED ON MIN. PAD SIZE RECOMMENDED 2.5 2.0 dc TJ = 175°C 1.5 SINE WAVE OR SQUARE WAVE 1.0 0.5 0 0 20 40 60 80 100 120 140 160 180 200 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 4. Current Derating, Case (Per Leg) Figure 5. Current Derating, Ambient (Per Leg) www.onsemi.com 3 MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) 100 TJ = 25°C 10 1 0 10 20 30 40 50 60 70 80 VR, REVERSE VOLTAGE (V) Figure 6. Typical Capacitance (Per Leg) www.onsemi.com 4 90 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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