SNSS40600CF8T1G

NSS40600CF8T1G, SNSS40600CF8T1G 40 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com −40 VOLTS, 7.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 45 mW ChipFET] CASE 1206A STYLE 4 COLLECTOR 1, 2, 3, 6, 7, 8 Features 4 BASE • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices* 5 EMITTER MARKING DIAGRAM VA M G VA = Specific Device Code M = Month Code G = Pb−Free Package PIN CONNECTIONS C 8 1 C C 7 2 C C 6 3 C E 5 4 B ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 4 1 Device Package Shipping† NSS40600CF8T1G ChipFET (Pb−Free) 3,000 / Tape & Reel SNSS40600CF8T1G ChipFET (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS40600CF8/D NSS40600CF8T1G, SNSS40600CF8T1G MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage Rating VCEO −40 Vdc Collector-Base Voltage VCBO −40 Vdc Emitter-Base Voltage VEBO −7.0 Vdc IC −6.0 Adc Collector Current − Peak ICM −7.0 A Electrostatic Discharge ESD Collector Current − Continuous HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Symbol Max Unit PD (Note 1) 830 6.7 mW mW/°C RqJA (Note 1) Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 2) 150 1.4 11.1 Thermal Resistance, Junction−to−Ambient RqJA (Note 2) Thermal Resistance, Junction−to−Lead #1 RqJL (Note 2) Total Device Dissipation (Single Pulse < 10 sec) PDsingle (Notes 2 & 3) 2.75 TJ, Tstg −55 to +150 Junction and Storage Temperature Range 90 15 °C/W W mW/°C °C/W °C/W W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz copper traces. 2. FR−4 @ 500 mm2, 1 oz copper traces. 3. Thermal response. http://onsemi.com 2 NSS40600CF8T1G, SNSS40600CF8T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max −40 − − −40 − − −7.0 − − − − −0.1 − − −0.1 − − −10 250 250 220 180 150 − − 300 − − − − − − − − − − − − − 0.007 0.045 0.080 0.150 0.180 0.160 −0.010 −0.075 −0.110 −0.200 −0.250 −0.220 − − −0.90 − − −0.90 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −40 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −7.0 Vdc) IEBO Collector Cutoff Current (VCB = −6.5 Vdc, VBE(off) = 0 Vdc) ICEO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = −10 mA, IC = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) (IC = −3.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (Note 5) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.020 A) (IC = −3.0 A, IB = −0.030 A) (IC = −4.0 A, IB = −0.400 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −2.0 A, VCE = −3.0 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT V V V MHz Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − − 650 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − − 150 pF Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) td − − 120 ns Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tr − − 220 ns Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) ts − − 650 ns Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tf − − 240 ns SWITCHING CHARACTERISTICS 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested. http://onsemi.com 3 NSS40600CF8T1G, SNSS40600CF8T1G 0.35 IC/IB = 10 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.25 VCE(sat) = 150°C 0.20 0.15 25°C 0.10 −55°C 0.05 0 0.001 0.01 0.1 1.0 IC/IB = 100 0.30 VCE(sat) = 150°C 0.25 0.20 25°C 0.15 −55°C 0.10 0.05 0 10 0.001 IC, COLLECTOR CURRENT (A) 1.2 150°C (5 V) 25°C (2 V) 250 −55°C (5 V) VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) −55°C (2 V) 150 50 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 350 0.001 0.01 0.1 1.0 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.1 0.01 1.0 10 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current VCE = −1.0 V −55°C 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.001 0.001 IC, COLLECTOR CURRENT (A) 0.8 0.1 0.9 0.2 10 1.0 0.9 1.0 0.3 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 25°C (5 V) 10 IC/IB = 10 1.1 150°C (2 V) 450 1.0 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 750 550 0.1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 650 0.01 0.01 0.1 1.0 10 1.0 100 mA 10 mA IC = 500 mA 0.8 300 mA 0.6 0.4 0.2 0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 4 100 NSS40600CF8T1G, SNSS40600CF8T1G 225 Cobo, OUTPUT CAPACITANCE (pF) 700 Cibo (pF) 650 600 550 500 450 400 350 300 0 1.0 2.0 3.0 4.0 5.0 Cobo (pF) 200 175 150 125 100 75 50 6.0 0 5.0 10 15 20 25 30 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1.0 IC (A) Cibo, INPUT CAPACITANCE (pF) 750 1.0 mS 10 mS 0.1 100 mS 1.0 S Thermal Limit 0.01 0.01 0.1 1.0 10 VCE (Vdc) Figure 9. Safe Operating Area http://onsemi.com 5 100 35 NSS40600CF8T1G, SNSS40600CF8T1G PACKAGE DIMENSIONS ChipFETt CASE 1206A−03 ISSUE K D 8 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. q 6 L 5 HE 5 6 7 8 4 3 2 1 E 1 2 e1 3 e 4 b DIM A b c D E e e1 L HE q c A 0.05 (0.002) STYLE 4: PIN 1. COLLECTOR 2. COLLECTOR 3. COLLECTOR 4. BASE 5. EMITTER 6. COLLECTOR 7. COLLECTOR 8. COLLECTOR MILLIMETERS NOM MAX 1.05 1.10 0.30 0.35 0.15 0.20 3.05 3.10 1.65 1.70 0.65 BSC 0.55 BSC 0.28 0.35 0.42 1.80 1.90 2.00 5° NOM MIN 1.00 0.25 0.10 2.95 1.55 SOLDERING FOOTPRINT* 1 2.032 0.08 8X 8X 0.66 0.026 0.457 0.018 2X ǒ mm inches Ǔ 2X 0.017 0.079 1.727 0.068 2.362 0.093 0.65 0.025 PITCH MAX 0.043 0.014 0.008 0.122 0.067 2.032 0.08 1 2.362 0.093 INCHES NOM 0.041 0.012 0.006 0.120 0.065 0.025 BSC 0.022 BSC 0.011 0.014 0.071 0.075 5° NOM MIN 0.039 0.010 0.004 0.116 0.061 0.457 0.018 0.66 0.026 Basic Style mm Ǔ ǒinches Style 4 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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