SNST3904DXV6T5G

DATA SHEET www.onsemi.com Dual General Purpose Transistor NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G (3) (2) Q1 Q2 (4) (5) MARKING DIAGRAM SOT−563 CASE 463A STYLE 1 1 Features hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count AEC−Q101 Qualified and PPAP Capable − NSVT3904DXV6T1G NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 200 mAdc ESD >16000 >2000 V Collector Current − Continuous Electrostatic Discharge HBM MM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2015 April, 2022 − Rev. 9 1 MA M G G 1 MA = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† NST3904DXV6T1G SOT−563 (Pb−Free) 4000/Tape & Reel NSVT3904DXV6T1G SOT−563 (Pb−Free) 4000/Tape & Reel NST3904DXV6T5G SOT−563 (Pb−Free) 8000/Tape & Reel SNST3904DXV6T1G SOT−563 (Pb−Free) 4000/Tape & Reel SNST3904DXV6T5G SOT−563 (Pb−Free) 8000/Tape & Reel Device MAXIMUM RATINGS Rating (6) NST/NSV3904DXV6 The NST/NSV3904DXV6 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−563 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. • • • • • • • (1) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NST3904DXV6T1/D NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance Junction-to-Ambient (Note 1) Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad www.onsemi.com 2 Symbol Max Unit PD 357 2.9 mW mW/°C RqJA 350 °C/W Symbol Max Unit PD 500 4.0 mW mW/°C RqJA 250 °C/W TJ, Tstg −55 to +150 °C NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc IBL − 50 nAdc ICEX − 50 nAdc 40 70 100 60 30 − − 300 − − − − 0.2 0.3 0.65 − 0.85 0.95 OFF CHARACTERISTICS Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS (Note 2) hFE DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0 2.0 10 12 kW Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5 0.1 8.0 10 X 10− 4 Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100 100 400 400 − Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0 3.0 40 60 mmhos Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz) NF − − 5.0 4.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) td − 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts − 200 Fall Time (IB1 = IB2 = 1.0 mAdc) tf − 50 ns ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%. DUTY CYCLE = 2% 300 ns 10 < t1 < 500 ms +3 V DUTY CYCLE = 2% +10.9 V < 1 ns +3 V +10.9 V 275 275 10 k 10 k -0.5 V t1 0 1N916 Cs < 4 pF* -9.1 V′ Cs < 4 pF* < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit www.onsemi.com 3 NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G TYPICAL TRANSIENT CHARACTERISTICS 10 500 7.0 300 200 5.0 Cibo TIME (ns) CAPACITANCE (pF) TJ = 25°C TJ = 125°C 3.0 Cobo 2.0 IC/IB = 10 100 70 tr @ VCC = 3.0 V 50 30 20 40 V 15 V 10 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 7 5 20 30 40 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Turn −On Time Figure 3. Capacitance 500 500 VCC = 40 V IC/IB = 10 300 200 VCC = 40 V IB1 = IB2 300 200 t f , FALL TIME (ns) t r, RISE TIME (ns) IC/IB = 20 100 70 50 30 20 100 70 50 10 10 7 5 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 30 20 1.0 IC, COLLECTOR CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Rise Time Figure 6. Fall Time www.onsemi.com 4 200 NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 14 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 mA 4 SOURCE RESISTANCE = 500 W IC = 100 mA 2 0 0.1 0.2 0.4 1.0 2.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 7. Noise Figure Figure 8. Noise Figure 40 100 5.0 10 5.0 10 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE (m mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 10. Output Admittance h ie , INPUT IMPEDANCE (k OHMS) 20 10 5.0 2.0 1.0 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) Figure 9. Current Gain 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 11. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 12. Voltage Feedback Ratio www.onsemi.com 5 NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 -55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) Figure 14. Collector Saturation Region www.onsemi.com 6 2.0 3.0 5.0 7.0 10 NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G 1.2 1.2 VCE = 1 V 1.0 0.8 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) TYPICAL STATIC CHARACTERISTICS −55°C 25°C 0.6 0.4 150°C 0.2 0 0.0001 0.001 0.01 0.1 25°C 0.6 0.4 150°C 0.2 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 15. Base Emitter Voltage vs. Collector Current Figure 16. Base Emitter Saturation Voltage vs. Collector Current 0.30 1.0 IC/IB = 10 150°C 0.25 25°C 0.20 +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) −55°C 0.8 0 1 IC/IB = 10 1.0 −55°C 0.15 0.10 qVC FOR VCE(sat) 0 -55°C TO +25°C -0.5 -55°C TO +25°C -1.0 +25°C TO +125°C 0.05 0 qVB FOR VBE(sat) -1.5 0.0001 0.001 0.01 0.1 1 -2.0 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) Figure 17. Collector Emitter Saturation Voltage vs. Collector Current Figure 18. Temperature Coefficients www.onsemi.com 7 180 200 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE H 6 1 SCALE 4:1 DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD DATE 26 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOT−563, 6 LEAD CASE 463A ISSUE H DATE 26 JAN 2021 GENERIC MARKING DIAGRAM* XX MG 1 XX = Specific Device Code M = Month Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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