SZMMSZ2V7T1G

MMSZxxxET1G Series, SZMMSZxxxET1G Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. http://onsemi.com Specification Features          500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 2.4 V to 56 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (> 16 kV) per Human Body Model Peak Power − 225 W (8 X 20 ms) AEC−Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb−Free Packages are Available* SOD−123 CASE 425 STYLE 1 1 Cathode 2 Anode MARKING DIAGRAM Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 1 xxx MG G 260C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 xxx = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS Rating Symbol Peak Power Dissipation @ 20 ms (Note 1) @ TL  25C Ppk Total Power Dissipation on FR−5 Board, (Note 2) @ TL = 75C Derated above 75C PD Max Unit W 225 500 6.7 mW mW/C Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 340 C/W Thermal Resistance, Junction−to−Lead (Note 3) RqJL 150 C/W TJ, Tstg −55 to +150 Junction and Storage Temperature Range C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 11 2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint 3. Thermal Resistance measurement obtained via infrared Scan Method ORDERING INFORMATION Package Shipping† MMSZxxxET1G SOD−123 (Pb−Free) 3,000 / Tape & Reel SZMMSZxxxET1G SOD−123 (Pb−Free) 3,000 / Tape & Reel MMSZxxxET3G SOD−123 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 7 1 Publication Order Number: MMSZ2V4ET1/D MMSZxxxET1G Series, SZMMSZxxxET1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless I otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) VZ1 (V) (Notes 4 and 5) ZZT1 (Note 6) VZ2 (V) (Notes 4 and 5) @ IZT1 = 5 mA ZZT2 (Note 6) Max Reverse Leakage Current @ IZT2 = 1 mA IR @ VR Device Marking Min Nom Max W Min Max W mA V MMSZ2V4ET1G MMSZ2V7ET1G MMSZ3V0ET1G MMSZ3V3ET1G MMSZ3V6ET1G CL1 CL2 CL3 CL4 CL5 2.28 2.57 2.85 3.14 3.42 2.4 2.7 3.0 3.3 3.6 2.52 2.84 3.15 3.47 3.78 100 100 95 95 90 1.7 1.9 2.1 2.3 2.7 2.1 2.4 2.7 2.9 3.3 600 600 600 600 600 50 20 10 5 5 1 1 1 1 1 MMSZ3V9ET1G MMSZ4V3ET1G MMSZ4V7ET1G MMSZ5V1ET1G CL6 CL7 CL8 CL9 3.71 4.09 4.47 4.85 3.9 4.3 4.7 5.1 4.10 4.52 4.94 5.36 90 90 80 60 2.9 3.3 3.7 4.2 3.5 4.0 4.7 5.3 600 600 500 480 3 3 3 2 1 1 2 2 MMSZ5V6ET1G CM1 5.32 5.6 5.88 40 4.8 6.0 400 1 2 MMSZ6V2ET1G CM2 5.89 6.2 6.51 10 5.6 6.6 150 3 4 MMSZ6V8ET1G MMSZ7V5ET1G MMSZ8V2ET1G MMSZ9V1ET1G CM3 CM4 CM5 CM6 6.46 7.13 7.79 8.65 6.8 7.5 8.2 9.1 7.14 7.88 8.61 9.56 15 15 15 15 6.3 6.9 7.6 8.4 7.2 7.9 8.7 9.6 80 80 80 100 2 1 0.7 0.5 4 5 5 6 MMSZ10ET1G MMSZ11ET1G MMSZ12ET1G MMSZ13ET1G MMSZ15ET1G CM7 CM8 CM9 CN1 CN2 9.50 10.45 11.40 12.35 14.25 10 11 12 13 15 10.50 11.55 12.60 13.65 15.75 20 20 25 30 30 9.3 10.2 11.2 12.3 13.7 10.6 11.6 12.7 14.0 15.5 150 150 150 170 200 0.2 0.1 0.1 0.1 0.05 7 8 8 8 10.5 MMSZ16ET1G MMSZ18ET1G CN3 CN4 15.20 17.10 16 18 16.80 18.90 40 45 15.2 16.7 17.0 19.0 200 225 0.05 0.05 11.2 12.6 MMSZ20ET1G MMSZ22ET1G MMSZ24ET1G CN5 CN6 CN7 19.00 20.90 22.80 20 22 24 21.00 23.10 25.20 55 55 70 18.7 20.7 22.7 21.1 23.2 25.5 225 250 250 0.05 0.05 0.05 14 15.4 16.8 Device* 4. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage. 5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. *Include SZ-prefix devices where applicable. http://onsemi.com 2 MMSZxxxET1G Series, SZMMSZxxxET1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) VZ1 (V) (Notes 7 and 8) ZZT1 (Note 9) @ IZT1 = 2 mA VZ2 (V) (Notes 7 and 8) ZZT2 (Note 9) Max Reverse Leakage Current @ IZT2 = 0.1 mA @ IZT2 = 0.5 mA IR @ VR Device Marking Min Nom Max W Min Max W mA V MMSZ27ET1G MMSZ30ET1G MMSZ33ET1G MMSZ36ET1G MMSZ39ET1G CN8 CN9 CP1 CP2 CP3 25.65 28.50 31.35 34.20 37.05 27 30 33 36 39 28.35 31.50 34.65 37.80 40.95 80 80 80 90 130 25 27.8 30.8 33.8 36.7 28.9 32 35 38 41 300 300 325 350 350 0.05 0.05 0.05 0.05 0.05 18.9 21 23.1 25.2 27.3 MMSZ43ET1G MMSZ47ET1G MMSZ51ET1G MMSZ56ET1G CP4 CP5 CP6 CP7 40.85 44.65 48.45 53.20 43 47 51 56 45.15 49.35 53.55 58.80 150 170 180 200 39.7 43.7 47.6 51.5 46 50 54 60 375 375 400 425 0.05 0.05 0.05 0.05 30.1 32.9 35.7 39.2 Device* 7. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage. 8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 9. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. *Include SZ-prefix devices where applicable. http://onsemi.com 3 MMSZxxxET1G Series, SZMMSZxxxET1G Series 8 100 7 TYPICAL TC VALUES FOR MMSZxxxT1G SERIES, SZMMSZxxxT1G SERIES 6 5 4 10  VZ, TEMPERATURE COEFFICIENT (mV/C)  VZ, TEMPERATURE COEFFICIENT (mV/C) TYPICAL CHARACTERISTICS VZ @ IZT 3 2 1 0 −1 −2 1−3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 TYPICAL TC VALUES FOR MMSZxxxT1G SERIES, SZMMSZxxxT1G SERIES VZ @ IZT 12 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55C to +150C) Figure 2. Temperature Coefficients (Temperature Range − 55C to +150C) 1000 Ppk, PEAK SURGE POWER (WATTS) P D, POWER DISSIPATION (WATTS) 1.2 1.0 PD versus TL 0.8 0.6 100 PD versus TA 0.4 0.2 0 0 25 50 75 100 T, TEMPERATURE (C) RECTANGULAR WAVEFORM, TA = 25C 125 10 1 150 0.1 Figure 3. Steady State Power Derating 1000 1000 IZ = 1 mA TJ = 25C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE (  ) 10 100 PW, PULSE WIDTH (ms) Figure 4. Maximum Nonrepetitive Surge Power 1000 100 75 V (MMSZ5267BT1G) 91 V (MMSZ5270BT1G) 100 5 mA 20 mA 10 1 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 10 150C 1 0.4 Figure 5. Effect of Zener Voltage on Zener Impedance 0.5 25C 0C 75C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 6. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 MMSZxxxET1G Series, SZMMSZxxxET1G Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT ( A) TA = 25C 100 BIAS AT 50% OF VZ NOM 10 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 100 10 1 +150C 0.1 0.01 0.001 + 25C 0.0001 −55C 0.00001 0 10 Figure 7. Typical Capacitance 100 I Z , ZENER CURRENT (mA) 10 1 TA = 25C 10 1 0.1 0.1 0.01 80 Figure 8. Typical Leakage Current TA = 25C 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 0.01 12 10 10 100 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 ms tr 90 30 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 50 HALF VALUE IRSM/2 @ 20 ms 40 30 tP 20 10 0 0 20 90 Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT I Z , ZENER CURRENT (mA) 100 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 40 60 t, TIME (ms) Figure 11. 8  20 ms Pulse Waveform http://onsemi.com 5 80 90 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A1 1 HE DIM A A1 b c D E HE L q E 2 q L b C ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° GENERIC MARKING DIAGRAM* 1 SOLDERING FOOTPRINT* 0.91 0.036 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.22 0.048 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. ANODE SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42927B SOD−123 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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