TIG062E8-TL-H

TIG062E8 Ordering number : ENA1480A SANYO Semiconductors DATA SHEET TIG062E8 N-Channel IGBT Light-Controlling Flash Applications Features • • • • • • • Low-saturation voltage. Low voltage drive (3V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 400 V Gate-to-Emitter Voltage (DC) VGES ±6 V Gate-to-Emitter Voltage (Pulse) VGES PW≤1ms ICP1 Collector Current (Pulse) ICP2 ICP3 Maximum Collector-to-Emitter dv / dt Channel Temperature dVCE / dt Tch Storage Temperature Tstg ±8 V CM=150μF, VGE=3V CM=100μF, VGE=3.3V 100 A 130 A CM=100μF, VGE=4V VCE≤320V, starting Tch=25°C 150 A 400 V / μs 150 °C -40 to +150 °C Marking : ZC * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2109 TK IM TC-00002170 / 61009PJ MS IM TC-00001992 No. A1480-1/5 TIG062E8 Electrical Characteristics at Ta=25°C Parameter Symbol Collector-to-Emitter Breakdown Voltage Ratings Conditions min typ Unit max V(BR)CES ICES IGES IC=2mA, VGE=0V VCE=320V, VGE=0V Collector-to-Emitter Saturation Voltage VGE(off) VCE(sat) VCE=10V, IC=1mA IC=100A, VGE=3V Input Capacitance Cies VCE=10V, f=1MHz 2400 pF Output Capacitance Coes VCE=10V, f=1MHz 32 pF Reverse Transfer Capacitance Cres VCE=10V, f=1MHz 24 pF Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage 400 V VGE=±6V, VCE=0V Package Dimensions 0.4 5 8 7 6 2.9 0.25 μA 0.9 V 8 V 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector 0.15 5 2.3 0 t o 0.02 2.8 ±10 5 Top View 1 2 3 4 Top view 4 1 0.65 0.3 0.9 0.25 μA Electrical Connection unit : mm (typ) 7011A-004 8 10 0.07 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : ECH8 Bot t om View Fig.1 Large Current R Load Switching Circuit RL CM + VCC RG TIG062E8 100kΩ Note1. Gate Series Resistance RG ≥ 250Ω is recommended for protection purpose at the time of turn OFF. However, if dv / dt ≤ 400V / μs is satisfied at customer’s actual set evaluation, RG < 250Ω can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off. No. A1480-2/5 TIG062E8 3.0V 2.5V 75 1.8V 50 0 1 2 3 4 5 6 7 8 9 Collector-to-Emitter Voltage, VCE -- V VCE -- VGE Collector-to-Emitter Voltage, VCE -- V 8 7 6 5 25°C Tc=75°C 4 --25°C 3 2 1 2 3 4 5 6 Gate-to-Emitter Voltage, VGE -- V IT14700 VCE(sat) -- Tc Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 10 9 0A 15 I C= 4V, = V GE 8 7 A 6 00 I =1 =3V, C VGE 5 4 3 2 --50 --25 0 25 50 100 75 125 Case Temperature, Tc -- °C 3 150 Tc = VCE -- VGE IC=150A 8 Tc=75°C 25°C --25°C 7 6 5 4 3 2 1 5 6 Gate-to-Emitter Voltage, VGE -- V 2 3 4 IT14701 VGE(off) -- Tc 0.9 VCE=10V IC=1mA 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 --50 --25 0 25 50 75 Coes Cres 100 125 Case Temperature, Tc -- °C Switching Time, SW Time -- ns 2 2 3 Test circuit Fig.1 VGE=3V VCC=320V RG=250Ω CM=150μF PW=50μs td(o ff) 2 tf 1000 150 IT14703 SW Time -- ICP 3 3 3 5 IT14699 5 1000 7 5 100 7 5 2 9 1 f=1MHz Cies 2 1 IT14702 Cies, Coes, Cres -- VCE 5 4 Gate-to-Emitter Voltage, VGE -- V 0 10 IC=100A 11 Cies, Coes, Cres -- pF 50 IT14698 9 10 7 75 0 10 Gate-to-Emitter Cutoff Voltage, VGE(off) -- V Collector-to-Emitter Voltage, VCE -- V 10 1 100 25 25 0 75 °C 100 125 Collector Current, IC -- A Collector Current, IC -- A V =4 GE VCE=10V 25 °C .0V 125 IC -- VGE 150 --2 5° C IC -- VCE 150 tr 7 5 3 td(on) 2 100 0 2 4 6 8 10 12 14 16 Collector-to-Emitter Voltage, VCE -- V 18 20 IT14704 7 10 2 3 5 7 100 2 Collector Current (Pulse), ICP -- A 3 5 IT14705 No. A1480-3/5 TIG062E8 SW Time -- RG 5 tf 1000 7 ff) t d(o tr 5 3 2 ) on t d( 100 Test circuit Fig.1 VGE=3V VCC=320V ICP=100A CM=150μF PW=50μs 7 5 2 3 5 7 2 100 3 5 Gate Series Resistance, RG -- Ω ICP -- VGE VCE=320V CM=100μF 140 80 60 40 200 50 100 150 200 250 300 350 400 450 Gate Series Resistance, RG -- Ω 20 1 2 3 4 5 CM -- ICP2 300 500 IT14707 CM -- ICP1 200 100 VGE=3.3V VCE=320V 60 80 100 Tc=70°C 150 100 50 VGE=3V VCE=320V 0 20 40 120 Collector Current (Pulse)2, ICP2 -- A 140 160 IT14710 60 80 100 120 140 Collector Current (Pulse)1, ICP1 -- A 160 IT14709 CM -- ICP3 300 Tc=70°C 40 Tc=25°C 200 0 6 Tc=25°C 150 250 IT14708 250 20 300 300 Gate-to-Emitter Voltage, VGE -- V Maximum Capacitor, CM -- μF 1000 IT14706 Tc=70°C 0 400 0 0 7 100 0 500 Tc=25°C 120 0 0 600 100 Maximum Capacitor, CM -- μF Collector Current (Pulse), ICP -- A 160 Turn OFF, dv / dt -- V / μs 2 50 Test circuit Fig.1 VGE=3V VCC=320V ICP=100A PW=50μs 700 Maximum Capacitor, CM -- μF Switching Time, SW Time -- ns 3 3 2 dv / dt -- RG 800 250 Tc=25°C 200 Tc=70°C 150 100 50 0 VGE=4V VCE=320V 0 20 40 60 80 100 120 140 Collector Current (Pulse)3, ICP3 -- A 160 IT14711 No. A1480-4/5 TIG062E8 Note : TIG062E8 has protection diode between gate and emitter but handling it requires sufficient care to be taken. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2009. Specifications and information herein are subject to change without notice. PS No. A1480-5/5