TIP121TU

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − = 2500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built−In Base−Emitter Shunt Resistors Pb−Free Packages are Available* hFE • • • • DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100 VOLTS, 65 WATTS MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 1 1 2 3 STYLE 1: PIN 1. 2. 3. 4. TIP12x x A Y WW G TIP12xG AYWW BASE COLLECTOR EMITTER COLLECTOR = Device Code = 0, 1, 2, 5, 6, or 7 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 9 1 Publication Order Number: TIP120/D TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) MAXIMUM RATINGS Symbol TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Unit VCEO 60 80 100 Vdc Collector−Base Voltage VCB 60 80 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak IC 5.0 8.0 Adc Base Current IB 120 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 65 0.52 W W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 0.016 W W/°C E 50 mJ TJ, Tstg –65 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.92 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Rating Collector−Emitter Voltage Unclamped Inductive Load Energy (Note 1) Operating and Storage Junction, Temperature Range THERMAL CHARACTERISTICS Characteristic Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit 60 80 100 − − − − − − 0.5 0.5 0.5 − − − 0.2 0.2 0.2 IEBO − 2.0 mAdc hFE 1000 1000 − − − − − 2.0 4.0 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 100 mAdc, IB = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) VCEO(sus) Vdc ICEO mAdc ICBO mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 3.0 Adc, VCE = 3.0 Vdc) Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) (IC = 5.0 Adc, IB = 20 mAdc) VCE(sat) Vdc Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) VBE(on) − 2.5 Vdc Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe 4.0 − − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz Cob − − 300 200 pF DYNAMIC CHARACTERISTICS TIP125, TIP126, TIP127 TIP120, TIP121, TIP122 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% www.onsemi.com 2 TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) COLLECTOR COLLECTOR BASE BASE ≈ 8.0 k ≈ 120 ≈ 8.0 k ≈ 120 EMITTER EMITTER Figure 1. Darlington Circuit Schematic ORDERING INFORMATION Device Package Shipping TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TIP120 TIP120G TIP121 TIP121G TIP122 TIP122G TIP125 TIP125G TIP126 TIP126G TIP127 TIP127G PD, POWER DISSIPATION (WATTS) TA TC 4.0 80 3.0 60 TC 2.0 40 TA 1.0 20 0 0 0 20 40 60 80 100 T, TEMPERATURE (°C) 120 Figure 2. Power Derating www.onsemi.com 3 140 160 TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) 5.0 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC -30 V 2.0 RC SCOPE t, TIME (s) μ TUT V2 approx +8.0 V RB D1 51 0 V1 approx -12 V ≈ 8.0 k ≈ 120 +4.0 V 25 ms for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities. tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tf 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 0.2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) td @ VBE(off) = 0 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 4. Switching Times D = 0.5 0.3 0.2 0.2 0.1 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.92°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2 0.1 0.07 0.05 0.05 0.02 0.03 0.02 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C Figure 3. Switching Times Test Circuit 1.0 0.7 0.5 PNP NPN ts 3.0 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 Figure 5. Thermal Response www.onsemi.com 4 20 50 100 200 500 1.0 k TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150°C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown IC, COLLECTOR CURRENT (AMP) 20 100 ms 10 500 ms 5.0 dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED 1ms @ TC = 25°C (SINGLE PULSE) 5ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 2.0 1.0 0.5 0.2 0.1 0.05 0.02 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 6. Active−Region Safe Operating Area 300 TJ = 25°C 5000 3000 2000 200 C, CAPACITANCE (pF) h fe , SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25°C VCE = 4.0 Vdc IC = 3.0 Adc 100 50 30 20 10 1.0 Cob 100 70 Cib 50 PNP NPN PNP NPN 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 30 0.1 500 1000 Figure 7. Small−Signal Current Gain 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance www.onsemi.com 5 50 100 TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) NPN TIP120, TIP121, TIP122 PNP TIP125, TIP126, TIP127 20,000 20,000 VCE = 4.0 V VCE = 4.0 V 5000 10,000 7000 5000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 TJ = 150°C 3000 2000 25°C 1000 -55°C 500 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) TJ = 150°C 3000 25°C 2000 1000 700 500 -55°C 300 200 0.1 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain 3.0 TJ = 25°C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25°C IC = 2.0 A 2.6 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 Figure 10. Collector Saturation Region 3.0 3.0 TJ = 25°C TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2.0 1.5 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 0.5 0.1 10 VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. “On” Voltages www.onsemi.com 6 5.0 7.0 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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