TIP33CG

DATA SHEET www.onsemi.com NPN High-Power Transistors TIP33C Designed for general−purpose power amplifier and switching applications. TO−247 CASE 340L STYLE 3 Features • ESD Ratings: Machine Model, C; > 400 V • • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125 in These Devices is Pb−Free* 10 AMPERE NPN SILICON POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 60 Vdc Collector − Base Voltage VCBO 60 Vdc Emitter − Base Voltage VEBO 5.0 Vdc IC 10 15 Adc Apk Base Current − Continuous IB 3.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 80 0.64 Watts W/°C TJ, Tstg – 65 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.56 °C/W Thermal Resistance, Junction−to−Ambient RqJA 35.7 °C/W Collector Current − Continuous − Peak (Note 1) Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MARKING DIAGRAM TIP33C AYWWG 1 BASE TIP33C A Y WW G 3 EMITTER 2 COLLECTOR = = = = = Device Code Assembly Location Year Work Week Pb−Free Package ORDERING INFORMATION Device Package TIP33CG TO−247 (Pb−Free) Shipping† 30 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 September, 2022 − Rev. 5 1 Publication Order Number: TIP33C/D TIP33C ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Min Max Unit VCEO(sus) 60 − − Vdc Collector−Emitter Cutoff Current (VCE = 30 V, IB = 0) (VCE = 60 V, IB = 0) ICEO − 0.7 mA Collector−Emitter Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES − 0.4 mA Emitter−Base Cutoff Current (VEB = 5.0 V, IC = 0) IEBO − 1.0 mA 40 20 − 100 − − 1.0 4.0 − − 1.6 3.0 Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mA, IB = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 1.0 A, VCE = 4.0 V) (IC = 3.0 A, VCE = 4.0 V) hFE Collector−Emitter Saturation Voltage (IC = 3.0 A, IB = 0.3 A) (IC = 10 A, IB = 2.5 A) VCE(sat) Base−Emitter On Voltage (IC = 3.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 0.5 A, VCE = 10 V, f = 1.0 kHz) hfe 20 − − Current−Gain — Bandwidth Product (IC = 0.5 A, VCE = 10 V, f = 1.0 MHz) fT 3.0 − MHz 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. www.onsemi.com 2 TIP33C 500 VCE = 4.0 V TJ = 25°C hFE , DC CURRENT GAIN 200 100 50 20 NPN PNP 10 5.0 0.1 10 1.0 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain 15 10 1.0ms 5.0 3.0 2.0 1.0 0.5 0.2 0.1 1.0 10ms 300ms dc SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT TC = 25°C TIP33A IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 20 TIP33C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) L = 200 mH IC/IB ≥ 5.0 VBE(off) = 0 to 5.0 V TC = 100°C 15 10 5.0 0 70 100 0 Figure 2. Maximum Rated Forward Bias Safe Operating Area 20 40 60 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 3. Maximum Rated Forward Bias Safe Operating Area FORWARD BIAS REVERSE BIAS The Forward Bias Safe Operating Area represents the voltage and current conditions these devices can withstand during forward bias. The data is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10%, and must be derated thermally for TC > 25_C. The Reverse Bias Safe Operating Area represents the voltage and current conditions these devices can withstand during reverse biased turn−off. This rating is verified under clamped conditions so the device is never subjected to an avalanche mode. www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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