TIP41AG

TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G,TIP42AG, TIP42BG, TIP42CG(PNP) Complementary Silicon Plastic Power Transistors www.onsemi.com Designed for use in general purpose amplifier and switching applications. Features • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40−60−80−100 VOLTS, 65 WATTS MAXIMUM RATINGS Rating Collector−Emitter Voltage TIP41G, TIP42G TIP41AG, TIP42AG TIP41BG, TIP42BG TIP41CG, TIP42CG Symbol VCEO Value Unit Vdc 40 60 80 100 VCB Emitter−Base Voltage VEB 5.0 Vdc IC 6.0 Adc ICM 10 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 65 0.52 W W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 0.016 W W/°C Unclamped Inductive Load Energy (Note 1) E 62.5 mJ TJ, Tstg – 65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Collector Current − Peak Operating and Storage Junction, Temperature Range *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. October, 2014 − Rev. 11 1 BASE Vdc 40 60 80 100 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W. © Semiconductor Components Industries, LLC, 2014 NPN COLLECTOR 2,4 1 BASE Collector−Base Voltage TIP41G, TIP42G TIP41AG, TIP42AG TIP41BG, TIP42BG TIP41CG, TIP42CG Collector Current − Continuous PNP COLLECTOR 2,4 1 3 EMITTER 3 EMITTER 4 TO−220 CASE 221A STYLE 1 1 2 3 MARKING DIAGRAM TIP4xxG AYWW TIP4xx xx A Y WW G = Device Code = 1, 1A, 1B, 1C 2, 2A, 2B, 2C = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: TIP41A/D TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 1.67 °C/W Thermal Resistance, Junction−to−Ambient RqJA 57 °C/W Min Max Unit ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) TIP41G, TIP42G TIP41AG, TIP42AG TIP41BG, TIP42BG TIP41CG, TIP42CG VCEO(sus) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP41G, TIP41AG, TIP42G, TIP42AG (VCE = 60 Vdc, IB = 0) TIP41BG, TIP41CG, TIP42BG, TIP42CG ICEO Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) TIP41G, TIP42G (VCE = 60 Vdc, VEB = 0) TIP41AG, TIP42AG (VCE = 80 Vdc, VEB = 0) TIP41BG, TIP42BG (VCE = 100 Vdc, VEB = 0) TIP41CG, TIP42CG ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc 40 60 80 100 − − − − mAdc − 0.7 − 0.7 mAdc − 400 − 400 − 400 − 400 − 1.0 30 15 − 75 − 1.5 − 2.0 3.0 − 20 − mAdc ON CHARACTERISTICS (Note 2) hFE DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe MHz − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 TA 4.0 TC 80 3.0 60 2.0 40 1.0 20 0 0 TC TA 20 0 40 60 100 80 T, TEMPERATURE (°C) 120 140 160 Figure 1. Power Derating VCC +30 V 25 ms RC SCOPE +11 V RB 0 -9.0 V D1 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA Figure 2. Switching Time Test Circuit 2.0 TJ = 25°C VCC = 30 V IC/IB = 10 1.0 0.7 0.5 t, TIME (s) μ PD, POWER DISSIPATION (WATTS) TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) 0.3 0.2 tr 0.1 0.07 0.05 0.03 0.02 0.06 td @ VBE(off) ≈ 5.0 V 0.1 0.4 0.6 1.0 0.2 2.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn−On Time www.onsemi.com 3 4.0 6.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 1.0 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.92°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.2 1.0 0.5 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k Figure 4. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 IC, COLLECTOR CURRENT (AMP) 0.5ms 5.0 1.0ms 3.0 TJ = 150°C 2.0 CURVES APPLY BELOW RATED VCEO 1.0 0.5 SECONDARY BREAKDOWN LTD BONDING WIRE LTD THERMAL LIMITATION @ TC = 25°C (SINGLE PULSE) 0.3 0.2 0.1 5.0 5.0ms TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C 40 10 20 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 100 Figure 5. Active−Region Safe Operating Area 5.0 300 ts t, TIME (s) μ 1.0 TJ = 25°C TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 200 C, CAPACITANCE (pF) 3.0 2.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.06 tf Cib 100 70 Cob 50 0.1 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 30 0.5 6.0 Figure 6. Turn−Off Time 1.0 2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance www.onsemi.com 4 30 50 TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) hFE, DC CURRENT GAIN 300 200 VCE = 2.0 V TJ = 150°C 100 70 50 25°C 30 20 10 7.0 5.0 0.06 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 -55°C 1.0 2.0 0.2 0.3 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 0.1 4.0 2.0 TJ = 25°C 1.6 1.2 IC = 1.0 A 0.4 0 6.0 10 θV, TEMPERATURE COEFFICIENTS (mV/°C) V, VOLTAGE (VOLTS) 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4.0 V 0.4 VCE(sat) @ IC/IB = 10 0.2 0.3 0.4 0.6 1.0 2.0 3.0 4.0 6.0 IC, COLLECTOR CURRENT (A) μ 50 100 200 300 IB, BASE CURRENT (mA) 500 1000 *APPLIES FOR IC/IB ≤ hFE/4 +1.5 +1.0 +25°C to +150°C +0.5 *qVC FOR VCE(sat) 0 -55°C to +25°C -0.5 +25°C to +150°C -1.0 -1.5 qVB FOR VBE -55°C to +25°C -2.0 -2.5 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients VCE = 30 V TJ = 150°C 100°C 25°C 100 IC = ICES 10-1 REVERSE 10-3 -0.3 -0.2 -0.1 +2.0 IC, COLLECTOR CURRENT (AMP) R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 0.1 103 10-2 30 +2.5 TJ = 25°C 101 20 Figure 9. Collector Saturation Region 2.0 102 5.0 A 0.8 Figure 8. DC Current Gain 0 0.06 2.5 A FORWARD 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7 6.0 10M VCE = 30 V 1.0M IC = 10 x ICES IC ≈ ICES 100k 10k IC = 2 x ICES 1.0k 0.1k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance www.onsemi.com 5 TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) ORDERING INFORMATION Device Package Shipping TIP41G TO−220 (Pb−Free) 50 Units / Rail TIP41AG TO−220 (Pb−Free) 50 Units / Rail TIP41BG TO−220 (Pb−Free) 50 Units / Rail TIP41CG TO−220 (Pb−Free) 50 Units / Rail TIP42G TO−220 (Pb−Free) 50 Units / Rail TIP42AG TO−220 (Pb−Free) 50 Units / Rail TIP42BG TO−220 (Pb−Free) 50 Units / Rail TIP42CG TO−220 (Pb−Free) 50 Units / Rail www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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