UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor
PNP and NPN Surface Mount
http://onsemi.com Features
• • • • •
High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A ESD Rating − Machine Model: C Pb−Free Package is Available
(6)
(5)
(4)
Q1
Q2
(1)
(2)
(3)
MAXIMUM RATINGS (TA = 25°C)
Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 60 50 7.0 200 Unit Vdc Vdc Vdc mAdc SC−88 CASE 419B 1
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature
MARKING DIAGRAM
Symbol PD Max 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) 670 (Note 1) 490 (Note 2) Max 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) 493 (Note 1) 325 (Note 2) 188 (Note 1) 208 (Note 2) −55 to +150 Unit mW mW/°C °C/W 1 Symbol PD Unit mW mW/°C °C/W °C/W °C 3Z = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 3Z M G G
RqJA
RqJA RqJL TJ, Tstg
ORDERING INFORMATION
Device* UMZ1NT1 UMZ1NT1G Package SC−88 SC−88 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad
*The “T1” suffix refers to a 7 inch reel. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: UMZ1NT1/D
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 5
UMZ1NT1
Q1: NPN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) DC Current Gain (Note 3) (VCE = 6.0 Vdc, IC = 2.0 mAdc) Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Transistor Frequency 3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO − − − hFE 200 VCE(sat) fT 0.15 − − 114 − − − − 400 0.25 − Vdc MHz 0.1 2.0 1.0 Min 50 60 7.0 − Typ − − − − Max − − − 0.1 Unit Vdc Vdc Vdc mAdc
mAdc mAdc mAdc −
Q2: PNP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) DC Current Gain (Note 3) (VCE = 6.0 Vdc, IC = 2.0 mAdc) Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Transistor Frequency Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO − − − hFE −200 VCE(sat) fT −0.15 − − 142 − − − − −400 −0.3 − Vdc MHz −0.1 −2.0 −1.0 Min −50 −60 −7.0 − Typ − − − − Max − − − −0.1 Unit Vdc Vdc Vdc mAdc
mAdc mAdc mAdc −
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UMZ1NT1
Typical Electrical Characteristics: PNP Transistor
−200 IC, COLLECTOR CURRENT (mA) −2.0 mA −160 −1.5 mA −1.0 mA hFE, DC CURRENT GAIN TA = 100°C 1000
−120 −0.5 mA −80 IB = −0.2 mA −40 TA = 25°C 0 0 −1 −2 −3 −4 −5 −6 VCE, COLLECTOR−EMITTER VOLTAGE (V)
25°C 100
−25°C
10 −1
VCE = −1.0 V −10 −100 −1000
IC, COLLECTOR CURRENT (mA)
Figure 1. Collector Saturation Region
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V)
Figure 2. DC Current Gain
1000 TA = 100°C
−1 IC/IB = 10 TA = 100°C 25°C −0.1 −25°C
hFE, DC CURRENT GAIN
25°C 100
−25°C
10 −1
VCE = −6.0 V −10 −100 −1000
−0.01 −1
−10
−100
−1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
Figure 4. VCE(sat) versus IC
−10 BASE−EMITTER SATURATION VOLTAGE (V)
−10,000 COMMON EMITTER VCE = 6 V IB, BASE CURRENT (mA) −1000 TA = 100°C 25°C
−25°C −100
−1
−10
TA = 25°C IC/IB = 10 −10 −100 −1000
−1 −0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 VBE, BASE−EMITTER VOLTAGE (V) −1
−0.1 −1
IC, COLLECTOR CURRENT (mA)
Figure 5. VBE(sat) versus IC
Figure 6. Base−Emitter Voltage
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UMZ1NT1
Typical Electrical Characteristics: NPN Transistor
280 IC, COLLECTOR CURRENT (mA) 6.0 mA 5.0 mA 240 200 1.0 mA 160 120 80 IB = 0.2 mA 40 0 0 1 2 TA = 25°C 3 4 5 6 VCE, COLLECTOR−EMITTER VOLTAGE (V) 10 1 VCE = 1.0 V 10 100 1000 0.5 mA 3.0 mA 2.0 mA hFE, DC CURRENT GAIN TA = 100°C 25°C −25°C 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Voltage
Figure 8. DC Current Gain
1000 TA = 100°C 25°C −25°C 100
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V)
1 IC/IB = 10
hFE, DC CURRENT GAIN
TA = 100°C 0.1 25°C −25°C
10 1
VCE = 6.0 V 10 100 1000
0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain
Figure 10. VCE(sat) versus IC
10 BASE−EMITTER SATURATION VOLTAGE (V)
10,000 COMMON EMITTER VCE = 6 V IB, BASE CURRENT (mA) 1000 −25°C 100 TA = 100°C 25°C
1
10
TA = 25°C IC/IB = 10 1 10 100 1000
1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
0.1 IC, COLLECTOR CURRENT (mA)
VBE, BASE−EMITTER VOLTAGE (V)
Figure 11. VBE(sat) versus IC
Figure 12. Base−Emitter Voltage
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UMZ1NT1
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W
D e
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000
6
5
4
HE
1 2 3
−E−
b 6 PL 0.2 (0.008)
M
E
M
DIM A A1 A3 b C D E e L HE
A3 C A
A1
L
SOLDERING FOOTPRINT*
0.50 0.0197
0.65 0.025 0.65 0.025 0.40 0.0157
1.9 0.0748
SCALE 20:1
mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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UMZ1NT1/D