US1BFA

Super Fast Surface Mount Rectifiers US1AFA-US1MFA Features • • • • • • • • Glass Passivated Chip Junction Low Power Loss, High Efficiency Fast Switching Reverse Recovery Time: 50~75 ns Maximum High Surge Capacity UL Flammability 94V−0 Classification MSL 1 per J−STD−020 NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free and are RoHS Compliant www.onsemi.com 2 1 SOD−123FL CASE 425AB 1 Cathode 2 Anode MARKING DIAGRAM &Y &ZH*L&G &Y &Z H*L * &G = Binary Calendar Year Coding Scheme = Assembly Plant Code = Specific Device Code = A/B/D/F/G/J/K/M = 1−Digit Weekly Date Code (Week) ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2021 − Rev. 3 1 Publication Order Number: US1MFA/D US1AFA−US1MFA ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) Parameter Symbol US1 AFA US1 BFA US1 DFA US1 FFA US1 GFA US1 JFA US1 KFA US1 MFA Unit 100 200 300 400 600 800 1000 V VRRM Repetitive Peak Reverse Voltage 50 VRMS RMS Reverse Voltage 35 70 140 210 280 420 560 700 V DC Blocking Voltage 50 100 200 300 400 600 800 1000 V VR IF(AV) Average Forward Rectified Current 1 A IFSM Peak Forward Surge Current: 8.3 ms Single Half Sine−Wave Superimposed on Rated Load 30 A Operating Junction Temperature Range −55 to +150 °C Storage Temperature Range −55 to +150 °C TJ TSTG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) Parameter Symbol Value Unit YJL Typical Thermal Resistance, Junction to Lead 21 °C/W RθJA Typical Thermal Resistance, Junction to Ambient 153 °C/W NOTE: Device mounted at minimum pad. ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) Symbol Parameter Conditions US1 AFA US1 BFA US1 DFA US1 FFA US1 GFA 0.95 1.30 US1 JFA US1 KFA US1 MFA 1.70 Unit VF Maximum Instantaneous Forward IF = 1 A Voltage (Note 1) V IR Maximum Reverse Current at Rated VR TJ = 25°C 5 TJ = 125°C 150 CJ Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 20 15 pF Trr Maximum Reverse Recovery Time IF = 0.5 A, IR = 1 A, Irr = 0.25 A 50 75 ns mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse test with PW = 300 ms, 1% duty cycle. ORDERING INFORMATION Part Number Top Mark Package Shipping† US1AFA, NRVUS1AFA* HAL 3,000 / Tape & Reel US1BFA, NRVUS1BFA* HBL SOD−123FL (Pb−Free / Halogen Free) US1DFA, NRVUS1DFA* HDL US1FFA, NRVUS1FFA* HFL US1GFA, NRVUS1GFA* HGL US1JFA, NRVUS1JFA* HJL US1KFA, NRVUS1KFA* HKL US1MFA, NRVUS1MFA* HML †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 2 US1AFA−US1MFA AVERAGE FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT ( A) TYPICAL PERFORMANCE CHARACTERISTICS Figure 2. Typical Reverse Characteristics INSTANTANEOUS FORWARD CURRENT (A) Figure 1. Maximum Forward Current Derating Voltage PEAK FORWARD SURGE CURRENT (A) TJ=25 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) LEAD TEMPERATURE ( oC) 8.3 ms Single Half Sine Wave US1AFA−US1DFA US1GFA US1JFA−US1MFA FORWARD VOLTAGE (V) NUMBER OF CYCLES AT 60 Hz Figure 3. Maximum Non−Repetitive Forward Surge Current JUNCTION CAPACITANCE (pF) TJ=125 Figure 4. Typical Instantaneous Forward Characteristics US1AFA−US1GFA US1JFA−US1MFA REVERSE VOLTAGE (V) Figure 5. Typical Junction Capacitance Figure 6. Reverse Recovery Time Characteristic and Test Circuit Diagram www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123FL CASE 425AB ISSUE O DATE 31 AUG 2016 2.90 2.70 1.90 1.70 4.30 1.40 1.90 1.20 TOP VIEW 1.40 1.20 LAND PATTERN RECOMMENDATION 1.43 1.23 3.80 3.40 0.30 0.16 FRONT VIEW 0.85 0.35 2.60 2.45 NOTES: A. NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. 1.20 0.80 BOTTOM VIEW DOCUMENT NUMBER: DESCRIPTION: 98AON13722G SOD−123FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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