HL6344G

HL6343G/44G Circular Beam Low Operating Current Description The HL6343G/44G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser levelers, laser scanners and optical equipment for measurement. ODE-208-018 (Z) Rev.0 Jul. 01, 2005 Features • • • • • • • Optical output power : 10 mW CW Single longitudinal mode Visible light output : 635 nm Typ Low operating current : 35 mA Typ Low aspect ratio : 1.2 Typ Operating temperature : +50°C TM mode oscillation Package Type • HL6343G/44G: G2 Internal Circuit • HL6343G 1 3 Internal Circuit • HL6344G 1 3 PD LD PD LD 2 2 Absolute Maximum Ratings (TC = 25°C) Item Symbol Optical output power PO Pulse optical output power PO(Pulse) LD reverse voltage VR(LD) PD reverse voltage VR(PD) Operating temperature Topr Storage temperature Tstg Note: Pulse condition : Pulse width ≤ 1 µs, duty = 50% Ratings 10 12 * 2 30 –10 to +50 –40 to +85 Unit mW mW V V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Condition Threshold current Ith — 20 35 mA — Slope efficiency ηs 0.5 0.8 1.2 mW/mA 6 (mW) / (I(8mW) – I(2mW)) Operating current IOP — 35 45 mA PO = 10 mW Operating voltage VOP — 2.4 2.7 V PO = 10 mW Lasing wavelength λp 630 635 640 nm PO = 10 mW Beam divergence θ// 13 17 25 ° PO = 10 mW parallel to the junction Beam divergence θ⊥ 13 20 25 ° PO = 10 mW perpendicular to the junction Aspect ratio θ⊥/θ// — 1.2 1.5 — PO = 10 mW Monitor current IS 0.06 0.14 0.24 mA PO = 10 mW, VR(PD) = 5 V Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as by ESD. 2. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a board. Rev.0 Jul. 01, 2005 page 1 of 5 HL6343G/44G Typical Characteristic Curves Optical Output Power vs. Forward Current 10 TC = -10°C 40°C 8 25°C 6 50°C Threshold current, Ith (mA) Threshold Current vs. Case Temperature 100 Optical output power, PO (mW) 50 4 20 2 0 0 60 20 40 Forward current, IF (mA) 80 10 –10 0 10 20 30 40 Case temperature, TC (°C) 50 Slope Efficiency vs. Case Temperature 1.4 Slope efficiency, ηs (mW/mA) Monitor Current vs. Case Temperature 0.20 PO = 10mW VR = 5V Monitor current, IS (mA) 1.2 0.16 1.0 0.8 0.6 0.4 0.2 0 –10 0 10 20 30 40 Case temperature, TC (°C) 50 0.12 0.08 0.04 0 –10 0 10 20 30 40 Case temperature, TC (°C) 50 Wavelangth vs. Case Temperature 645 PO = 10mW 1.0 Wavelangth, λp (nm) Relative intensity Far Field Pattern PO = 10mW 0.8 TC = 25°C 0.6 0.4 Parallel 0.2 0 –40 –30 –20 –10 0 10 20 Angle, θ ( ° ) 30 40 Perpendicular 640 635 630 625 –10 0 10 20 30 40 Case temperature, TC (°C) 50 Rev.0 Jul. 01, 2005 page 2 of 5 HL6343G/44G Typical Characteristic Curves (cont.) Polarization Ratio vs. Optical Output Power 250 200 Polarization ratio Astigmatism vs. Oprical Output Power 5 TC = 25°C NA = 0.55 Astigmatism, AS (mm) TC = 25°C NA = 0.55 4 150 3 100 2 50 1 0 0 2 4 6 8 Optical output power, PO (mW) 10 0 0 2 4 6 8 10 Optical output power, PO (mW) Electrostatic Destruction 100 80 Survival rate (%) Survival rate (%) Electrostatic Destruction 100 80 60 40 20 0 Reverse (C : 100pF, R : 1.5kΩ) N=10pcs 5surges applied/voltage ∆IO ≤ 10% judgment 60 40 20 0 Forward (C : 100pF, R : 1.5kΩ) N=10pcs 5surges applied/voltage ∆IO ≤ 10% judgment 0 800 600 400 200 Applied voltage (V) 1000 0 1 2 Applied voltage (kV) 3 Rev.0 Jul. 01, 2005 page 3 of 5 HL6343G/44G Package Dimensions Unit: mm φ 9.0 +0 –0.025 1.0 ± 0.1 (0.65) (90°) 3.5 ± 0.2 0.3 Glass 12° *1 φ 7.2 +0.3 –0.2 φ 6.2 ± 0.2 (φ2.0) Emitting Point 0.4 +0.1 –0 3 – φ 0.45 ± 0.1 1 2 3 12° * 1 1 3 2 φ 2.54 ± 0.35 Note: 1. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a board. OPJ Code JEDEC JEITA Mass (reference value) LD/G2 — — 1.1 g Rev.0 Jul. 01, 2005 page 4 of 5 1.5 ± 0.1 9±1 2.45 HL6343G/44G Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified. Sales Offices Device Business Unit Opnext Japan, Inc. Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan Tel: (03) 3865-5591 For the detail of Opnext, Inc., see the following homepage: Japan (Japanese) Other area (English) http://www.opnext.com/jp/products/ http://www.opnext.com/products/ ©2007 Opnext Japan, Inc., All rights reserved. Printed in Japan. Colophon 2.0 Rev.0 Jul. 01, 2005 page 5 of 5