OP140B

Product Bulletin OP140A May 1996 GaAs Plastic Infrared Emitting Diodes Types OP140A, OP140B, OP140C, OP140D Features • Wide irradiance pattern • Selected to specific on-line intensity • Low cost, miniature plastic side• Mechanically and spectrally matched looking package to the OP550 series of phototransistors and the OP560 series of photodarlingtons ranges Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Peak Forward Current (1 µs pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . 3.0 A Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40o C to +100o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. A max. of 20 grams force may be applied to the leads when soldering. (2) Derate linearly 1.33 mW/o C above 25o C. (3) Ee(APT) is a measurement of the average apertured radiant incidence upon a sensing area 0.180" (4.57 mm) in diameter perpendicular to and centered on the mechanical axis of the lens and 0.653" (16.6 mm) from the lens tip. Ee(APT) is not necessarily uniform within the measured area. Description The OP140 series devices are 935nm high intensity gallium arsenide infrared emitting diodes molded in IR transmissive plastic side-looking packages. The side looking packages are for use in PC board mounted slotted switches or as an easy mount PC board interrupter. Replaces OP140SL series 2-10 Types OP140A, OP140B, OP140C, OP140D Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL Ee(APT) PARAMETER Apertured Radiant Incidence OP140D OP140C OP140B OP140A MIN TYP MAX UNITS 0.10 0.20 0.30 0.40 mW/cm mW/cm2 0.40 mW/cm2 0.55 mW/cm2 1.60 100 935 50 +0.30 40 1000 500 V µA nm nm nm/ C Deg. ns ns o 2 TEST CONDITIONS IF = 20 mA(3) IF = 20 mA(3) IF = 20 mA(3) IF = 20 mA(3) IF = 20 mA VR = 2.0 V IF = 10 mA IF = 10 mA IF = Constant IF = 20 mA IF(PK) = 100 mA, PW = 10 µs, D.C. = 10% VF IR λ p B ∆λ /∆T P θHP tr tf Forward Voltage Reverse Current Wavelength at Peak Emission Spectral Bandwidth Between Half Power Points Spectral Shift with Temperature Emission Angle at Half Power Points Output Rise Time Output Fall Time 2-11