OPB755T

Product Bulletin OPB755T June 1996 January 2006 Reflective Object Sensor Type OPB755T Features • High contrast ratio, 1000 to 1 minimum 12.0 ± 0.5 (304.8 ± 12.7) • 12.0" ± 0.5" min. UL#1429 26 AWG wire leads terminated into an AMP #640442-5 connector • Low cost plastic housing Description The OPB755T reflective assembly features a phototransistor output designed to decrease low-level light gain while not affecting the high-level light gain. Available without mounting tabs as OPB755N. Available with PC Board mountable leads as OPB750 series. Logic output sensors available in the OPB760/OPB770 series. Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . -40o C to +80o C Input Diode Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Peak Forward Current (1 µs pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . 3.0 A Reverse DC Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) Output Phototransistor Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Collector DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) Notes: (1) Derate Linearly 1.82 mW/o C above 25o C. (2) All parameters tested using pulse technique. (3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. (4) Photocurrent is measured using an Eastman Kodak Neutral White test card having a 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog #1257795. (5) IC(OFF) is the photocurrent measured with current to the input diode and a 5% reflecting surface. For RoHS compliant devices add "Z" to the end of the part number: OPB755TZ Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 11-48 (972) 323-2200 Fax (972) 323-2396 Type OPB755T Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL Input Diode VF IR V(BR)CEO ICEO PARAMETER MIN MAX UNITS 1.80 100 30 100 0.40 500 375 250 250 V µA V nA V µA µA µA nA IF = 40 mA VR = 2.0 V IC = 100 µA TEST CONDITIONS Forward Voltage Reverse Current Collector-Emitter Breakdown Voltage Collector Dark Current Saturation Voltage On-State Collector Current Output Phototransistor VCE = 10 V, IF = 0, H = 0 IC = 150 µA, IF = 30 mA, d = 0.22” (4) VCE = 5 V, IF = 30 mA, d = 0.08” (4) VCE = 5 V, IF = 30 mA, d = 0.15” (4) VCE = 5 V, IF = 30 mA, d = 0.22” Coupled VCE(SAT) IC(ON) Off-State Collector Current IC(OFF) IF = 30 mA, VCE = 5 V,(5) d = 0.08” 0.15” 0.22” , , Typical Performance Curves Normalized Collector Current vs. Object Distance Normalized to d = .150" IF = 30 mA VCE = 5 V Average Normalized Ouput Current vs. Forward Current Normalized to IF = 30 mA VCE = 5 V +2σ Average -2σ +2σ -2σ Distance to Reflective Surface - Inches Forward Current - mA Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 11-49