AXUV100

ELECTRON DETECTION 100 mm2 AXUV100 FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS TYP MAX 100 10mm x 10mm Active Area Responsivity, R MIN UNITS mm2 A/W (see graphs on next page) VB = ±10mV 10 50 M-ohm Reverse Breakdown Voltage, VR IR = 1µA 5 10 Volts Capacitance, C VR = 0V 10 VR = 0V, RL = 50Ω 10 Shunt Resistance, Rsh Rise Time THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature1 44 nF usec -40°C TO 70°C 70°C 260°C 1 0.08" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com ELECTRON DETECTION 100 mm2 RESPONSIVITY (A/W) 0.30 ELECTRON RESPONSE 0.25 0.20 0.15 0.10 0.10 0.00 100 RESPONSIVITY (A/W) 0.30 1000 ENERGY (ev) 10,000 100,000 EUV-UV PHOTON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 0 0.5 RESPONSIVITY (A/W) AXUV100 50 100 150 WAVELENGTH (nm) 200 250 UV-VIS-NIR PHOTON RESPONSIVITY 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 WAVELENGTH (nm) 800 900 1000 1100 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com