OD-148W

HIGH-POWER GaAlAs IR EMITTERS FEATURES ANODE (CASE) OD-148W GLASS .006 HIGH MAX .015 1.00 MIN. • Open center of emission .209 .220 • High reliability liquid-phase epitaxially grown GaAlAs • Hermetically sealed TO-46 package • OD-148-C chip used .183 .152 .187 .156 .017 .088 .102 .143 .150 .100 .041 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. CATHODE .036 45° RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10 A VR = 0V MIN 8 TYP 10 880 80 95 30 17 MAX UNITS mW nm nm Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Peak Emission Wavelength, P Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 5 1.55 1.9 Volts Volts pF sec sec Deg 0.5 0.5 ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Continuous Forward Current Reverse Voltage Power Dissipation1 190mW 100mA 5V 3A Peak Forward Current (10 s, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C 260°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 -55°C TO 100°C 400°C/W Typical 135°C/W Typical 100°C 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C Thermal Resistance, RTHJA2 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com HIGH-POWER GaAlAs IR EMITTERS 200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 AMBIENT TEMPERATURE (°C) 100 NO HEAT SINK INFINITE HEAT SINK OD-148W 10 PEAK FORWARD CURRENT, Ip (amps) THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT t = 10 s t = 100 s t = 500 s 1 MAXIMUM RATINGS 0.1 t Ip T 0.1 D= t T 0.01 0.01 1 DUTY CYCLE, D (%) 10 100 TYPICAL CHARACTERISTICS 100 DEGRADATION CURVE IF = 20mA RELATIVE POWER OUTPUT (%) 100 RADIATION PATTERN RELATIVE POWER OUTPUT (%) 90 IF = 50mA 80 80 60 70 TCASE = 25°C NO PRE BURN-IN PERFORMED 40 60 IF = 100mA 104 105 20 50 101 102 103 STRESS TIME, (hrs) 0 –100 –80 –60 –40 –20 0 20 40 BEAM ANGLE, (deg) 60 80 100 4 FORWARD I-V CHARACTERISTICS 1.5 1.4 POWER OUTPUT vs TEMPERATURE FORWARD CURRENT, IF (amps) RELATIVE POWER OUTPUT 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 3 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –50 2 1 0 –25 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 100 SPECTRAL OUTPUT 1,000 POWER OUTPUT vs FORWARD CURRENT RELATIVE POWER OUTPUT (%) 60 40 POWER OUTPUT, P (mW) o 80 100 10 20 DC PULSE 10 s, 100Hz 0 750 800 850 900 WAVELENGTH, (nm) 950 1,000 1 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com