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1. 2. 2.1 2.2
Item No.: 105208
This specification applies to GaAsP / GaAs LED Chips Structure Planar structure Electrodes p-side (anode) n-side (cathode) Al Au alloy
3.
Outlines (dimensions in microns) p-Diffusion p-Electrode Isolator n-Epitaxy GaAsP 300 n-Substrate GaAs n-Electrode 1200
1450
4.
Electrical and optical characteristics (T=25°C)
Parameter
Symbol
Conditions
min
5 150
typ
1,65 200 660
max
1,84
Unit
V V cd nm
Forward voltage VF I F = 7 mA Reverse voltage VR IR = 10 A Luminous intensity IV I F = 7 mA Peak wavelength I F = 7 mA λP Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with wire bond side on top
6.
Labeling Type Lot No. IV typ min max Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
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