114210

RED 1. 2. 2.1 2.2 Item No.: 114210 This specification applies to GaAlAs / GaAs LED Chips Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) p-Electrode p-Epitaxy GaAlAs Active Layer n-Epitaxy GaAlAs 270 n-Substrate GaAs 265 n-Electrode 265 120 Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25°C) Parameter Forward voltage Reverse current Symbol VF IR Conditions IF = 20 mA VR = 5 V min typ 1,85 max 2,10 10 Unit V µA mcd nm Luminous intensity * IV IF = 20 mA Peak wavelength IF = 20 mA λP Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max 5,5 7 655 Quantity © 2004 OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com