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1. 2. 2.1 2.2
Item No.: 115180
This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed) Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy
3.
Outlines (dimensions in microns)
n-Electrode n-Epitaxy GaAlAs 265 120 180 Active Layer p-Epitaxy GaAlAs p-Electrode
265
Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage Reverse current
Symbol
VF IR
Conditions
IF = 20 mA VR = 5 V
min
typ
1,90
max
2,30 10
Unit
V µA mcd nm
Luminous intensity * IV IF = 20 mA Peak wavelength IF = 20 mA λP Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max
22
28 655
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
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