RED
1. 2. 2.1 2.2
Item No.: 193150
This specification applies to GaAlAs / GaAlAs LED Chips Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy or Al
3.
Outlines (dimensions in microns)
n-Electrode
260
120
180
260
p-Electrode
Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage Reverse current Luminous intensity *
Symbol
VF IR IV
Conditions
IF = 20 mA VR = 5 V IF = 20 mA
min
typ
1,85 26,0
max
2,30 10
Unit
V µA mcd nm
Peak wavelength λP IF = 20 mA 650 * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
很抱歉,暂时无法提供与“193150”相匹配的价格&库存,您可以联系我们找货
免费人工找货