2N7002HG

N-Ch hannel Enhancem E ment Mo osFET Tra ansistor 2N N7002H Feature es z Low on-resistancce. z G Up to 2KV 2 HBM ESD Protected Gate z High--speed switcching. z Drive e circuits can n be simple. z Parallel use is ea asy. Pb Lead-free 2N7002H 2N7002H HW SOT T-23 SOT-32 23 Typica al Applica ations z z N-channel enhan ncement mo ode effect tra ansistor. Switcching applica ation. Mechanical Data z Case e: SOT-23, SOT-323, S SO OT-523, DF N1006-3. z Molding Compou und, UL Flam mmability Cllassification 2N7002HT 2N7002 2HL SOT T-523 DFN1006-3 ng 94V-0. Ratin z Term minals: Matte e Tin Plated Leads, Sold derable Per MIL-S STD-202, Method M 208. mation Ordering Inform Part N Number Package Shipping g Marking g Code 2N70 002H□ SOT-23 3000/Tape& 3 Reel 700 02K 2N700 02HW□ SOT-323 3000/Tape& 3 Reel RK KS 2N70 002HT□ SOT-523 3000/Tape& 3 Reel 700 02K 2N70 002HL□ DFN1006-3 D 10000/Tape& &Reel 72 2 □: none is fo or Lead Free package; p “G” is forr Halogen Fre ee package. um Rating gs (@TA=25℃ unleess otherwiise specifie ed) Maximu Parameter Symbol S Vaalue Units Drain-Source e Voltage VDSS 660 V Gate -Source e Voltage VGSS ±220 V ID 3000 mA IDM 8000 mA Continuous D Drain Current Pulsed Drain n Current (NOTE4 4) 0..35 SOT-23 Power Dissip pation MTM0015A SOT-323 S PD 0..25 SOT-523 S 0..15 DFN1006-3 0..15 W www.g gmesemi.com 1 N-Channel Enhancement MosFET Transistor 2N7002H Thermal Characteristics Parameter Symbol Limits Unit 357 SOT-23 500 Thermal Resistance Junction SOT-323 to Ambient Air SOT-523 833 DFN1006-3 833 RθJA Tj 150 ℃ TSTG -55 to +150 ℃ Operating Junction Temperature Range Storage Temperature Range ℃/W Electrical Characteristics (@TA=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT OFF Characteristics VDSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA 60 - - V IDSS Drain to Source Leakage Current VDS=60V, VGS=0V - - 1 uA IGSS Gate-body Leakage VGS=±20V, VDS=0V - - ±10 uA VGS=5V, ID=0.05A - 1.5 3 VGS=10V, ID=0.5A - 1.45 2.5 VDS= VGS, ID=250uA 1 1.5 2.5 - (NOTE2) ON Characteristics RDS(ON) Static Drain-Source On-resistance VGS(TH) Gate Threshold Voltage Dynamic Characteristics Ω V (NOTE3) Ciss Input Capacitance VGS = 0V - 41 Coss Output Capacitance VDS = 20V - 15 Crss Reverse Transfer Capacitance f = 1.0MHz - 4 - 6 - - 5 - - 25 - - 15 - pF (NOTE3) Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD=30V,ID=0.2A VGS=10V,RG=25Ω RL=150Ω nS Source-Drain Diode Characteristics VSD IS Diode Forward Voltage(NOTE1) IS=0.3A,VGS=0V - 0.85 1.2 V Diode Continuous Forward Current TC=25℃ - - 0.3 A NOTE: 1、 Surface Mounted on FR4 Board, t ≤ 10 sec 2、 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 3、 Guaranteed by design, not subject to production. 4、 Pulse width limited by maximum junction temperature. MTM0015A www.gmesemi.com 2 N-Ch hannel Enhancem E ment Mo osFET Tra ansistor 2N N7002H Ratings and Cha aracteris stic Curv ves (TA=255℃ unlesss otherwisee noted) MTM0015A www.g gmesemi.com 3 N-Channel Enhancement MosFET Transistor 2N7002H Package Outline Dimensions(unit:mm) SOT-23 SOT-23 A E K B J D G H C A E D Min Max A 2.70 3.10 B 1.10 1.50 C 0.90 1.10 D 0.30 0.50 E 0.35 0.48 G 1.80 2.00 H 0.02 0.10 J 0.05 0.15 K 2.20 2.60 SOT-323 C K B SOT-323 Dim J H G Dim Min Max A 2.00 2.20 B 1.15 1.35 C 0.90 1.10 D 0.15 0.35 E 0.25 0.40 G 1.20 1.40 H 0.02 0.10 J 0.05 0.15 K 2.20 2.40 SOT-523 SOT-523 A F C K B D G H MTM0015A E J Dim Min Max A 1.50 1.70 B 0.75 0.85 C 0.60 0.80 D 0.15 0.30 E 0.30 0.40 F 0.25 0.40 G 0.90 1.10 H 0.02 0.10 J 0.08 0.18 K 1.45 1.75 www.gmesemi.com 4 N-Ch hannel Enhancem E ment Mo osFET Tra ansistor 2N N7002H DFN1006 6-3 DF FN1006-3 Dim Mi n Typ Max A 0.995 1.00 1.075 B 0.447 0.50 0.53 C 0.555 0.60 0.675 D 0.445 0.50 0.55 E/J 0.220 0.25 0.30 F - 0.40 - G - 0.35 - H 0 0.03 0.05 I 0.110 0.15 0.20 All Dim mensions in mm ng Pad Layout L (un nit:mm) Mountin SOT-23 0.95 0.95 2.00 0.90 0 0.80 0.65 SOT-323 0.65 1 1.90 0.90 0.70 MTM0015A www.g gmesemi.com 5 N-Ch hannel Enhancem E ment Mo osFET Tra ansistor 2N N7002H SOT-523 0.508 0.787 1.803 0.356 1.000 DFN1006 6-3 TANT NO OTICE IMPORT Galaxy Miccroelectroniccs (GME) res serves the rright to make e changes without w furtheer notice to any productt herein to m make correctiions, modific cations , imp provements , or other ch hanges. GM E does not assume a anyy liability arissing out of th he applicatio on or use off any produc ct described herein; neitther does it convey anyy license und der its patent rights ,nor the rights o of others . MTM0015A www.g gmesemi.com 6