RU1Z200Q

RU1Z200Q N-Channel Advanced Power MOSFET Features Pin Description • 150V/200A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) G D S TO247 D Applications pp • High Efficiency Synchronous Rectification in SMPS • High Speed Power Switching • Power Supply G S N Channel MOSFET N-Channel Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage g 150 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 200 A TC=25°C 800 A TC=25°C 200 TC=100°C 141 TC=25°C 600 TC=100°C 300 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ID ② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation IDP RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient A W 0.25 °C/W 50 °C/W 900 mJ Drain-Source Avalanche Ratings ③ EAS Avalanche a a c e Energy, e gy, S Single g e Pulsed u sed Ruichips Semiconductor Co., Ltd Rev. C– SEP., 2014 1 www.ruichips.com RU1Z200Q Electrical El t i l Characteristics Ch t i ti (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1Z200Q Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current VGS(th) IGSS ④ RDS(ON) 150 V VDS=150V, 150V VGS=0V 0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=90A 30 2.5 3.5 5.5 µA 4.5 V ±100 nA 6.5 mΩ 1.3 V Diode Characteristics ④ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=90A, VGS=0V ISD=90A, dlSD/dt=100A/µs 120 ns 440 nC 2 Ω ⑤ Dynamic Characteristics y RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=75V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 630 td(ON) Turn-on Delay Time 35 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics 1420 205 155 pF ns 270 ⑤ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=75V,IDS=90A, VGEN=10V,RG=4.7Ω 12800 VDS=120V, VGS=10V, IDS=90A 390 75 nC 105 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 90A 90A. ③Limited by TJmax, IAS =60A, VDD = 60V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. C– SEP., 2014 2 www.ruichips.com RU1Z200Q Ordering O d i and d Marking M ki Information I f ti Device Marking Package RU1Z200Q RU1Z200Q TO247 Ruichips Semiconductor Co., Ltd Rev. C– SEP., 2014 Packaging Quantity Reel Size Tape width Tube 3 30 - - www.ruichips.com RU1Z200Q Typical Characteristics T i l Ch t i ti Power Dissipation 700 Drain Current 250 600 ID - Drain Curre ent (A) PD - Powe er (W) 200 500 150 400 300 Limited By Package 100 200 100 0 50 VGS=10V 0 0 25 50 75 100 125 150 175 25 50 TJ - Junction Temperature (°C) Safe Operation Area 100 10µs 100µs 1ms 10ms DC 10 150 175 Ids=90A 20.0 15.0 10.0 1 0.1 125 Drain Current 30.0 RDS(ON) - On - Resistan nce (mΩ) 1000 100 25.0 RDS(ON) lim mited ID - Drain Current (A A) 10000 75 TJ - Junction Temperature (°C) TC=25°C 0.01 0.1 1 10 5.0 0.0 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Therrmal Response (°C/W W) Thermal Transient Impedance 1 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 0.1 0.01 Single Pulse 0.001 RθJC=0.25°C/W 0.0001 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. C– SEP., 2014 4 www.ruichips.com RU1Z200Q Typical Characteristics T i l Ch t i ti Output Characteristics 280 ID - Drain Cu urrent (A) RDS(ON) - On Resista ance (mΩ) 6,8,10V 240 200 160 5V 120 80 3V 40 0 0 1 2 3 Drain-Source On Resistance 30 4 25 20 15 10 10V 5 0 5 0 25 50 VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C ( ) Rds(on)=5.5mΩ -25 0 25 50 75 100 125 150 0.1 0.2 0.4 VGS - G Gate-Source Voltage e (V) C - Capacitance (pF F) Frequency=1 0MHz Frequency=1.0MHz 14000 12000 Ciss 6000 Coss 2000 Crss 0 1 10 100 1000 1 1.2 1.4 10 VDS 120V VDS=120V IDS=90A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) Ruichips Semiconductor Co., Ltd Rev. C– SEP., 2014 0.8 Gate Charge 16000 4000 0.6 VSD - Source-Drain Voltage (V) Capacitance 8000 200 TJ=25°C 1 175 20000 10000 175 TJ=175°C TJ - Junction Temperature (°C) 18000 150 10 0.0 -50 125 Source-Drain Diode Forward 100 VGS=10V IDS=90A 0.5 100 ID - Drain Current (A) IS - Source Currentt (A) No ormalized On Resisttance 2.5 75 100 200 300 400 500 QG - Gate Charge (nC) 5 www.ruichips.com RU1Z200Q Avalanche A l h Test T t Circuit Ci it and d Waveforms W f Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. C– SEP., 2014 6 www.ruichips.com RU1Z200Q Package Information P k I f ti A TO247 1 C h 顶杆孔深 H 2 E 1 E 1 L 2 L L 1 A 2 b 1 b c b e D SYMBOL A A1 b b1 b2 c c1 D E1 E2 L L1 L2 Φ e H h MM MIN 4.850 2.200 1.000 2.800 1.800 0.500 1.900 15.450 40.900 24.800 20.300 7.10 0.000 Ruichips Semiconductor Co., Ltd Rev. C– SEP., 2014 INCH NOM 5.000 2.400 1.200 3.000 2.000 0.600 2.000 15.600 3.500REF 3.600REF 41.100 24.950 20.450 7.20 5.450TYP 5.980REF 0.150 7 MAX 5.150 2.600 1.400 3.200 2.200 0.700 2.100 15.750 MIN 0.191 0.087 0.039 0.110 0.071 0.020 0.075 0.608 41.300 25.100 20.600 7.30 1.610 0.976 0.799 0.280 0.300 0.000 NOM 0.197 0.094 0.047 0.118 0.079 0.024 0.079 0.614 0.138REF 0.142REF 1.618 0.982 0.805 0.283 0.215TYP 0.235REF 0.006 MAX 0.203 0.102 0.055 0.126 0.087 0.028 0.083 0.620 1.626 0.988 0.811 0.287 0.012 www.ruichips.com RU1Z200Q Customer Service C t S i Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com @ p Ruichips Semiconductor Co., Ltd Rev. C– SEP., 2014 8 www.ruichips.com