FM180-N

FM120-N THRU FM1100-N CHIP SCHOTTKY BARRIER RECTIFIER 1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V SOD-323 0.106 (2.7) 0.091 (2.3) 0 .012(0.3) Typ. 0.057 (1.45) 0.041 (1.05) 0.047 (1.2) 0.031 (0.8) 0.016(0.4) Typ. 0.016(0.4) Typ. FEATURES • Batch process design, excellent power dissipation offers • • • • • • • • • better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Very tiny plastic SMD package. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228 MECHANICAL DATA • E poxy : UL94-V0 rated flame retardant • C ase : Molded plastic, SOD-323 • T erminals :Plated terminals, solderable per MIL-STD-750, Method 2026 • P olarity : Indicated by cathode band • M ounting Position : Any • W eight : Approximated 0.008 gram MAXIMUM RATING PARAMETER Forward rectified current Forward surge current ( AT T A=25 oC unless otherwise noted) CONDITIONS See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T A = 25 OC V R = V RRM T A = 125 OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol IO I FSM IR R èJA CJ T STG MIN. TYP. MAX. 1.0 30 0.5 10 UNIT A A Reverse current Thermal resistance Diode junction capacitance Storage temperature mA O 90 120 -65 +175 C/W pF O C SYMBOLS FM120-N FM130-N FM140-N FM150-N FM160-N FM180-N FM1100-N *1 V RRM (V) 20 30 40 50 60 80 100 V RMS*2 (V) 14 21 28 35 42 56 70 *3 VR (V) 20 30 40 50 60 80 100 *4 VF (V) Operating temperature T J, ( OC) *1 Repetitive peak reverse voltage -55 to +125 0.55 *2 RMS voltage *3 Continuous reverse voltage 0.70 -55 to +150 0.85 *4 Maximum forward voltage www.paceleader.tw 1 FM120-N THRU FM1100-N CHIP SCHOTTKY BARRIER RECTIFIER Rating and characteristic curves (FM120-N THRU FM1100-N) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CHARACTERISTICS 1.2 1.0 50 INSTANTANEOUS FORWARD CURRENT,(A) 15 FM 0N 0.8 12 FM 0.6 0.4 0.2 0 0 20 40 60 80 10 3.0 1.0 FM 12 0N ~F M 14 0 11 FM N~ 0N 0- ~F M 16 0N FM 15 0N 00 11 M ~F N 018 FM -N 100 AMBIENT TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 30 1 FM N~ 040 -N 120 140 160 180 200 TJ=25 C Pulse Width 300us 1% Duty Cycle 0.1 PEAK FORWARD SURGE CURRENT,(A) 24 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 18 TJ=25 C 8.3ms Single Half Sine Wave JEDEC method FORWARD VOLT AGE,(V) 12 6 FIG.5 - TYPICAL REVERSE 0 1 5 10 50 100 CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL JUNCTION CAPACITANCE 350 300 250 200 150 100 50 0 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) 10 1.0 TJ=75 C .1 TJ=25 C .01 .05 .1 .5 1 5 10 50 100 .01 0 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) www.paceleader.tw 2 FM120-N THRU FM1100-N CHIP SCHOTTKY BARRIER RECTIFIER Pinning information P in Pin1 Pin2 cathode anode Simplified outline Symbol 1 2 1 2 Marking T ype number FM120-N FM130-N FM140-N FM150-N FM160-N FM180-N FM1100-N Marking code 12 13 14 15 16 18 10 Suggested solder pad layout C A B Dimensions in inches and (millimeters) PACKAGE SOD-323 A 0.059 (1.50) B 0.039 (1.00) C 0.051 (1.30) w ww.paceleader.tw 3