PSD501H

PSD501H SURFACE MOUNT SCHOTTKY BARRIER DIODES SCHOTTKY BARRIER RECTIFIER 100m AMPERES 40 VOLTS SOD-323 .091(2.30) 1.63(2.70) .063(1.60) .071(1.80) .045(1.15) .053(1.35) 0.15R .009(0.25) .016(0.40) 1 2 .031(0.80) .039(1.00) .0035(0.089) .015(0.377) .00(0.00) .004(0.10) FEATURES Extremely Low VF Very Small Conduction Losses Schottky Barrier Diodes Encapsulated in SOD-323 Package MAXIMUM RATING CHARACTERISTICS Breakdown Voltage Continuous Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (8.3ms 1/2 Sine Wave) Storage Temperature SYMBOL BV VR IO IFSM Tstg PSD501H 45 40 100 1.0 UNITS Volts Volts mAmps Amps 0 -40 to +125 C ELECTRICAL CHARACTERISTICS (TA=25 C) o Maximum Instantneous Forward Voltage IF = 100mA Maximum Instantneous Reverse Current (VR = 10V) Typical Junction Capacitance (VR = 10V, f = 1MHz) VF IR CJ 0.55 30 20 Volts Amps pF www.paceleader.tw 1 PSD501H SURFACE MOUNT SCHOTTKY BARRIER DIODES Electrical characteristics curves (Ta=25 C unless specified otherwise) 1000 10m FORW ARD CURRENT :I F (mA) 125 C REVERSE CURRENT: I R (A) 1m 75 C 100 100 C C C 5 10 75 -25 25 10 25 C 12 C 1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0 10 20 30 40 ARD VOL TAGE:V F (V) FORW REVERSE VOL TAGE:VR (V) Fig.1 Forward characteristics CAPACITANCE BETWEEN TERMINALS :C T (pF) Fig.2 Reverse characteristics 100 100 Io CURRENT (%) 80 60 40 20 0 10 0 25 50 75 100 125 1 0 5 10 15 20 25 30 35 REVERSE VOL TASGE : VR (V) AMBIENT TEMPERA TURE : Ta ( C) Fig. 4 Derating curve (mounting on glass epoxy PCBs) Fig.3 Capacitance between terminals characteristics www.paceleader.tw 2