2SA1022

Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm s Features q q q 2.8 –0.3 0.65±0.15 +0.2 1.5 –0.05 +0.25 0.65±0.15 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO CEBO IC PC Tj Tstg 30 20 5 30 200 150 –55 ~ +150 V V V mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : V s Electrical Characteristics Parameter Collector cutoff current Forward current transfer ratio Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance (Ta=25˚C) Symbol ICBO hFE* fT NF Zrb Cre Conditions VCB = 10V, IE = 0 VCB = 10V, IE = –1mA VCB = 10V, IE = –1mA, f = 200MHz VCB = 10V, IE = –1mA, f = 5MHz VCB = 10V, IE = –1mA, f = 2MHz VCE = 10V, IC = 1mA, f = 10.7MHz 70 150 250 2.8 22 0.9 4 50 1.5 min typ max 0.1 220 MHz dB Ω pF Unit µA *h FE Rank classification Rank hFE Marking Symbol B 70 ~ 140 VB C 110 ~ 220 VC 0 to 0.1 Ratings Unit 0.1 to 0.3 0.4±0.2 0.8 (Ta=25˚C) 1.1 –0.1 0.16 –0.06 +0.2 +0.1 0.4 –0.05 Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 +0.1 1.45 1 Transistor PC — Ta 250 12 Ta=25˚C 225 10 IB=100µA 12.5 2SC2295 IC — VCE 15.0 VCE=10V Ta=25˚C IC — I B Collector power dissipation PC (mW) Collector current IC (mA) 175 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 8 80µA Collector current IC (mA) 18 200 10.0 6 60µA 7.5 4 40µA 5.0 2 20µA 2.5 0 0 6 12 0 0 20 40 60 80 100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA) IB — VBE 120 VCE=10V Ta=25˚C 100 50 60 IC — VBE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 VCE=10V VCE(sat) — IC IC/IB=10 Collector current IC (mA) Base current IB (µA) 80 40 Ta=75˚C 30 25˚C –25˚C 60 Ta=75˚C 25˚C 40 20 0.1 –25˚C 0.03 0.01 0.1 20 10 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE — IC 240 VCE=10V 400 350 300 250 200 150 100 50 0 0.1 0 – 0.1 – 0.3 fT — I E 60 Zrb — IE Reverse transfer impedance Zrb (Ω) VCB=10V f=100MHz Ta=25˚C VCB=10V f=2MHz Ta=25˚C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) 50 160 Ta=75˚C 25˚C 40 120 –25˚C 80 30 20 40 10 0.3 1 3 10 30 100 –1 –3 –10 –30 –100 0 – 0.1 – 0.3 –1 –3 –10 Collector current IC (mA) Emitter current IE (mA) Emitter current IE (mA) 2 Transistor Cre — VCE Common emitter reverse transfer capacitance Cre (pF) 3.0 f=10.7MHz Ta=25˚C 2.5 10 12 VCB=6V f=100MHz Rg=50Ω Ta=25˚C 2SC2295 NF — IE 24 Vie=gie+jbie VCE=10V bie — gie Input susceptance bie (mS) 20 –4mA 16 IE=–1mA –7mA 100 2.0 IC=3mA 1.5 1mA Noise figure NF (dB) 8 –2mA 58 6 12 1.0 4 8 0.5 2 4 f=10.7MHz 0 0.1 0.3 1 3 10 30 100 0 – 0.1 0 – 0.3 –1 –3 –10 0 8 16 24 32 40 Collector to emitter voltage VCE (V) Emitter current IE (mA) Input conductance gie (mS) bre — gre 0 bfe — gfe Forward transfer susceptance bfe (mS) f=10.7MHz 0 – 0.1mA f=10.7MHz 58 boe — goe 1.2 10.7 Reverse transfer susceptance bre (mS) yre=gre+jbre VCE=10V –1mA 100 yoe=goe+jboe VCE=10V – 0.1 IE=–1mA –20 58 –2mA 100 Output susceptance boe (mS) 1.0 – 0.2 –40 0.8 IE=–1mA 100 – 0.3 58 –60 IE=–4mA 100 58 0.6 58 0.4 – 0.4 100 –80 – 0.5 –100 yfe=gfe+jbfe VCE=10V 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 – 0.6 – 0.5 –120 – 0.4 – 0.3 – 0.2 – 0.1 0 0 20 40 60 80 100 Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS) Output conductance goe (mS) 3