2SA1535A

Power Transistors 2SA1535, 2SA1535A Silicon PNP epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SC3944 and 2SC3944A 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q 4.0 Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics High transition frequency fT Makes up a complementary pair with 2SC3944 and 2SC3944A, which is optimum for the driver-stage of a 60 to 100W output amplifier. (TC=25˚C) Ratings –150 –180 –150 –180 –5 –1.5 –1 15 2.0 150 –55 to +150 Unit V 7.5±0.2 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SA1535 2SA1535A 2SA1535 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO Solder Dip 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 emitter voltage 2SA1535A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SA1535 2SA1535 2SA1535A (TC=25˚C) Symbol ICBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –150V, IE = 0 IC = –1mA, IB = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCE = –10V, IC = –50mA, f = 10MHz VCB = –10V, IE = 0, f = 1MHz –150 –180 –5 90 50 160 100 – 0.5 –1.0 200 30 50 –2.0 –2.0 V V MHz pF 220 min typ max –10 Unit µA V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h FE1 Rank classification Q 90 to 155 R 130 to 220 Rank hFE1 1 Power Transistors PC — Ta Collector to emitter saturation voltage VCE(sat) (V) 32 2SA1535, 2SA1535A VCE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) –3 IC/IB=10 –10 VBE(sat) — IC IC/IB=10 Collector power dissipation PC (W) Without heat sink 28 24 20 16 12 8 4 0 0 20 40 60 80 100 120 140 160 –1 –3 TC=–25˚C 100˚C 25˚C –1 – 0.3 25˚C TC=100˚C –25˚C – 0.3 – 0.1 – 0.1 – 0.03 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Ambient temperature Ta (˚C) Collector current IC (A) Collector current IC (A) hFE — IC 400 1000 VCE=–10V fT — IE 100 VCB=–10V f=10MHz TC=25˚C 300 Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz TC=25˚C 80 Forward current transfer ratio hFE 300 TC=–25˚C 100 100˚C 30 25˚C Transition frequency fT (MHz) 60 200 40 10 100 20 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 0 0.01 0.03 0.1 0.3 1 0 –1 –3 –10 –30 –100 Collector current IC (A) Emitter current IE (A) Collector to base voltage VCB (V) Area of safe operation (ASO) –10 –3 Single pulse TC=25˚C ICP t=1ms IC Collector current IC (A) –1 – 0.3 – 0.1 – 0.03 – 0.01 10ms – 0.003 – 0.001 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) 2 2SA1535A 2SA1535 t=