2SB1604

Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm s Features q q q 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 15.0±0.3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1604 2SB1604A 2SB1604 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) 13.7–0.2 +0.5 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw Ratings –40 –50 –20 –40 –5 –20 –10 40 2 150 –55 to +150 Unit V 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SB1604A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 7° 123 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1604 2SB1604A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = –40V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A IC = –10A, IB = – 0.33A IC = –10A, IB = – 0.33A VCE = –10V, IC = – 0.5A, f = 10MHz VCB = –10V, IE = 0, f = 1MHz IC = –3A, IB1 = – 0.1A, IB2 = 0.1A min typ max –50 –50 Unit µA µA V –20 –40 45 90 260 – 0.6 –1.5 100 400 0.1 0.5 0.1 Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 VCE(sat) VBE(sat) fT Cob ton tstg tf V V MHz pF µs µs µs Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC — Ta 50 –12 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) IB=–100mA –10 –80mA –60mA –50mA –40mA –6 –35mA –30mA –25mA –4 –20mA –15mA –2 –10mA –5mA 0 0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12 TC=25˚C 2SB1604, 2SB1604A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –10 VCE(sat) — IC IC/IB=30 Collector power dissipation PC (W) Collector current IC (A) 40 –3 –8 –1 TC=100˚C 25˚C –25˚C 30 (1) 20 – 0.3 – 0.1 10 (3) (4) 0 (2) – 0.03 – 0.01 – 0.1 – 0.3 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –10 hFE — IC IC/IB=30 10000 VCE=–2V 10000 3000 1000 300 100 30 10 3 fT — IC VCE=–10V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE –3 TC=–25˚C 100˚C 25˚C 1000 300 100 –25˚C 30 10 3 1 – 0.1 – 0.3 25˚C –1 TC=100˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 Transition frequency fT (MHz) –10 –30 –100 3000 – 0.3 –1 –3 –10 –1 –3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 10 IE=0 f=1MHz TC=25˚C ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C tstg 0.3 ton 0.1 tf Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C ICP t=1ms IC Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 – 0.1 – 0.3 Switching time ton,tstg,tf (µs) 3 Collector current IC (A) –10 –3 –1 1 10ms DC – 0.3 – 0.1 – 0.03 0.03 0.01 –1 –3 –10 –30 –100 0 –1 –2 –3 –4 –5 –6 –7 –8 – 0.01 – 0.1 – 0.3 –1 –3 –10 –30 2SB1604A –100 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 2SB1604 Power Transistors Rth(t) — t 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) 2SB1604, 2SB1604A Thermal resistance Rth(t) (˚C/W) 102 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3