2SB792

Transistor 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD814 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB792 2SB792A 2SB792 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2 (Ta=25˚C) +0.2 1.1 –0.1 –150 –185 –150 –185 –5 –100 –50 200 150 –55 ~ +150 emitter voltage 2SB792A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : I(2SB792) 2F(2SB792A) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SB792 2SB792A (Ta=25˚C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob NV Conditions VCB = –100V, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30µA, IB = –3mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz VCE = –10V, IC = –1mA, GV = 80dB, Rg = 100kΩ, Function = FLAT 200 4 150 –150 –185 –5 130 130 450 330 –1 V MHz pF mV min typ max –1 Unit µA V V Emitter to base voltage Forward current transfer ratio 2SB792 2SB792A Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage *h FE Rank classification Rank hFE R 130 ~ 220 2SB792 2SB792A IR 2FR S 185 ~ 330 IS 2FS T 260 ~ 450 IT — Marking Symbol 0 to 0.1 V 0.1 to 0.3 0.4±0.2 0.8 Ratings Unit 0.16 –0.06 +0.1 0.4 –0.05 High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 +0.1 1.45 1 Transistor PC — Ta 240 –100 Ta=25˚C –90 200 IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –100 2SB792, SB792A IC — VCE –120 VCE=–5V 25˚C Ta=75˚C –80 –25˚C IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 160 –70 –60 –50 –40 –30 –20 –10 120 Collector current IC (mA) –12 –80 –60 80 –2mA –40 40 –1mA –20 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C IC/IB=10 600 hFE — IC 250 VCE=–5V 225 500 fT — I E VCB=–10V Ta=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) –10 –30 –100 200 175 150 125 100 75 50 25 400 Ta=75˚C 300 25˚C –25˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 – 0.3 200 100 –1 –3 –10 –30 –100 0 –0.1 –0.3 –1 –3 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 10 Collector output capacitance Cob (pF) 9 8 7 6 5 4 3 2 1 0 –1 IE=0 f=1MHz Ta=25˚C –3 –10 –30 –100 Collector to base voltage VCB (V) 2