2SC3311A

Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 3.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) 2.0±0.2 Ratings 60 50 7 200 100 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob * Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 0.7±0.1 marking +0.2 0.45–0.1 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. max 0.1 1 Unit µA µA V V V 60 50 7 160 0.1 150 3.5 460 0.3 VCE(sat) V MHz pF *h FE Rank classification Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 hFE Rank 1 Transistor PC — Ta 500 60 Ta=25˚C 50 2SC3311A IC — VCE 200 VCE=10V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 40 IB=160µA 140µA 300 Collector current IC (mA) 400 160 120 25˚C 80 Ta=75˚C –25˚C 30 120µA 100µA 200 20 80µA 60µA 100 10 40µA 20µA 40 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C Ta=75˚C –25˚C IC/IB=10 600 hFE — IC 300 VCE=10V VCE=10V f=100MHz Ta=25˚C fT — I E Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 100 250 400 Ta=75˚C 25˚C 200 300 –25˚C 150 200 100 100 50 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 10 240 IE=0 f=1MHz Ta=25˚C NV — IC VCE=10V Function=FLAT Ta=25˚C Collector output capacitance Cob (pF) Noise voltage NV (mV) 8 200 160 6 120 Rg=100kΩ 4 80 20kΩ 40 4.7kΩ 2 0 1 3 10 30 100 0 1 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (µA) 2